scholarly journals The Influence of Heating Time and Temperature on the Properties of CIGSSe Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Marco Giacomo Flammini ◽  
Nicola Debernardi ◽  
Maxime Le Ster ◽  
Brendan Dunne ◽  
Johan Bosman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Treatment Time ◽  
Series Resistance ◽  
Heat Exposure ◽  
Heating Time ◽  
Atmospheric Conditions ◽  
Shunt Resistance ◽  
Resistance Reduction ◽  
Different Temperatures ◽  
Lock In

Nonencapsulated CIGSSe solar cells, with a silver grid, were exposed to different temperatures for various periods in order to measure the effect of the heat exposure in CIGSSe modules. The heat treatment time and temperature were varied during the experiments, which were executed at atmospheric conditions. In all the cases, after reaching a temperature of about 300°C, theIVmeasurement showed a reduction of 2-3% in terms ofVOCandJSC. This is confirmed, respectively, by Raman and EQE measurements as well. The efficiency drop was −7%, −29%, and −48%, respectively, for 30 seconds, 300 seconds, and 600 seconds of exposure time. With temperatures larger than 225°C, the series resistance starts to increase exponentially and a secondary barrier becomes visible in theIVcurve. This barrier prevents the extraction of electrons and consequently reducing the solar cells efficiency. Lock-in thermography demonstrated the formation of shunts on the mechanical scribes only for 300 and 600 seconds exposure times. The shunt resistance reduction is in the range of 5% for all time periods.

scholarly journals Equivalent Circuit Model for Cu(In,Ga)Se2 Solar Cells Operating at Different Temperatures and Irradiance

Electronics ◽  
2018 ◽  
Vol 7 (11) ◽  
pp. 324 ◽  
Author(s):  
Matteo Bronzoni ◽  
Lorenzo Colace ◽  
Andrea De Iacovo ◽  
Antonino Laudani ◽  
Gabriele Lozito ◽  
...  
Keyword(s):  
Solar Cells ◽  
Equivalent Circuit Model ◽  
Reduced Form ◽  
Large Set ◽  
Atmospheric Conditions ◽  
Accurate Identification ◽  
Pv Systems ◽  
Different Temperatures ◽  
The One

The modeling of photovoltaic cells is an essential step in the analysis of the performances and characterization of PV systems. This paper proposes an experimental study of the dependence of the five parameters of the one-diode model on atmospheric conditions, i.e., irradiance and temperature in the case of thin-film solar cells. The extraction of the five parameters was performed starting from two sets of experimental data obtained from Cu(In,Ga)Se2 solar cells fabricated by the low-temperature pulsed electron deposition technique. A reduced form approach of the one-diode model has been adopted, leading to an accurate identification of the cell. It was possible to elaborate suitable relations describing the behavior of the parameters as functions of the environmental conditions. This allowed accurately predicting the trends of the parameters from a pair of curves, instead of a whole set of measurements. The developed model describing the dependence on irradiance and temperature was validated by means of a large set of experimental measurements on several Cu(In,Ga)Se2 (CIGS) devices built with the same technological process.

Recombination current and series resistance imaging of solar cells by combined luminescence and lock-in thermography

2007 ◽  
Vol 90 (15) ◽  
pp. 153502 ◽  
Author(s):  
K. Ramspeck ◽  
K. Bothe ◽  
D. Hinken ◽  
B. Fischer ◽  
J. Schmidt ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Recombination Current ◽  
Lock In

scholarly journals Influences of Low Intensity on Diode Parameters of CdTe Solar Cells

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2194
Author(s):  
Xiaobo Xu ◽  
Wenping Gu ◽  
Xiaoyan Wang ◽  
Wei Zhu ◽  
Lin Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Short Circuit ◽  
Illumination Intensity ◽  
Saturation Current ◽  
Shunt Resistance ◽  
Cdte Solar Cells ◽  
Parameter Variations ◽  
Small Intensity ◽  
Saturation Current Density

This study deals with the CdS/CdTe solar cells under low illumination intensity, with cell #1 for the shunt resistance exceeding 100,000 Ω·cm2 and cell #2 for the shunt resistance above 1000 Ω·cm2. The diode parameter variations with the decline of the irradiance intensity are illustrated by dividing 0–100 mW/cm−2 into a number of small intensity ranges for J–V measurements and assuming the diode parameters to be constant within each range, the diode parameters of each range including the series resistance, the shunt resistance, the reverse saturation current density and the ideality factor are then extracted by employing an analytical approach. The mechanism of the cell performance deviations are also investigated by basic theories, reports and experiments. For cell #1 with higher Rsh corresponding to less traps, Rsh shows a upward tendency as the irradiance declines, n and J0 exhibit a rise with the irradiance and keep nearly unchanged at the low irradiance values mainly due to recombination and carrier contributions, Rs shows a slight increase when the irradiance intensity goes down because of the resistance of CdTe absorption layer. For cell #2 with lower Rsh corresponding to more traps, with the decrease of the illumination intensity, Rsh increases sharply only for captured carrier reduction, Rs goes steadily up similarly, n and J0 exhibit a decline with the irradiance due to recombination shift. It should be pointed out that Rs varies much smoother than the traditional approximation of a reciprocal of differential at short circuit, and the distribution of Rsh is diverse, and an average Rsh of for each intensity range can reflect the variation trend.

Series resistance imaging in solar cells by lock-in thermography

2005 ◽  
Vol 13 (8) ◽  
pp. 645-660 ◽  
Author(s):  
O. Breitenstein ◽  
J. P. Rakotoniaina ◽  
A. S. H. van der Heide ◽  
J. Carstensen
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Lock In

Electrical Simulation and Characterization of Shunts in Solar Cells

2011 ◽  
Vol 110-116 ◽  
pp. 2453-2457 ◽  
Author(s):  
R. Gupta ◽  
P. Somasundaran ◽  
D.K. Nandi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Power Reduction ◽  
Shunt Resistance ◽  
Si Solar Cells ◽  
Simulation Based ◽  
Different Types ◽  
Lock In ◽  
Model Approach

This paper aims, to investigate the shunts in multi-crystalline (m-c) Si solar cells by lock-in infrared thermography (LIT) technique and to study their effect on the cell performance by PSpice simulations. LIT provided useful information about the location and nature of shunts which was used in the simulation. Based on the shunt location and shunt resistance of the cell obtained experimentally from the I-V characteristic of the cell, shunt resistance at the shunted region have been estimated by simulation using the distributed diode model approach of solar cell by fitting. Based on these values of shunts, simulation has been performed to obtain the information about the deterioration in cells performance caused by the shunts. This type of simulation is useful to study different types and severity of shunts at different locations of cells. Solar cells which have been used in this study show a power reduction in the range of 3% to 15% due the shunts. This reduction was more severe for the shunt which was on the bus-bar compared to the edges.

scholarly journals UV-Ozone Treatment on Cs2CO3Interfacial Layer for the Improvement of Inverted Polymer Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Yusheng Xin ◽  
Zixuan Wang ◽  
Lu Xu ◽  
Xiaowei Xu ◽  
Yang Liu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Indium Tin Oxide ◽  
Treatment Time ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Annealing Treatment ◽  
Open Circuit ◽  
Ozone Treatment ◽  
Shunt Resistance ◽  
Uv Ozone

Inverted configuration polymer solar cells (IPSCs) were prepared by using Cs2CO3modified indium tin oxide (ITO) substrates as cathode and MoO3/Al as anode, ITO/Cs2CO3/P3HT:PCBM/MoO3/Al. The interfacial Cs2CO3layers were conducted with annealing treatment and different time UV-Ozone treatment. The power conversion efficiency (PCE) of IPSCs was improved to 1% when the UV-Ozone treatment time is 15 minutes, with the open-circuit voltage of 0.48 V, short-circuit current density of 5.4 mA/cm2, and fill factor of 39%. The improvement of IPSCs should be attributed to the increased electron transporting and collection ability of Cs2CO3layer induced by UV-Ozone treatment. The underlying mechanism of PCE improvement was discussed in terms of series and shunt resistance of cells induced by UV-Ozone treatment on Cs2CO3layer, and the mole ratio of Cs to O of Cs2CO3layer with different UV-Ozone treatment was investigated by scanning electron microscopy operating in the mode for in situ energy dispersive X-ray (EDX) spectra.

Specifies of tandem organic solar cells using optical spacers with recombination model

2015 ◽  
Vol 12 (1) ◽  
pp. 77-82 ◽  
Author(s):  
M.R. Merad Boudia ◽  
A Cheknane ◽  
B Benyoucef
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Ideality Factor ◽  
Fill Factor ◽  
Series Resistance ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Shunt Resistance ◽  
Lumped Circuit Model

A numerical simulation study of a Tandem solar cell is presented. The parameters of single and two-diodes lumped-circuit model are usually the saturation current, the series resistance, the ideality factor, the shunt resistance and the photocurrent. It is found that the influence of the distributed series resistance on electrical characteristics can be described numerically by the application of the two models to Tandem organic solar cells. A description of the efficiency, fill factor, open circuit voltage and short circuit current on the devices are marked with series resistance, temperature and ideality factor. This approach allows one to obtain a set of parameters which is reasonable and representative of the physical system.

Series resistance imaging of silicon solar cells by lock-in photoluminescence

2017 ◽  
Vol 11 (7) ◽  
pp. 1700153 ◽  
Author(s):  
Peng Song ◽  
Junyan Liu ◽  
Mohummad Oliullah ◽  
Yang Wang
Keyword(s):  
Solar Cells ◽  
Series Resistance ◽  
Silicon Solar Cells ◽  
Lock In

scholarly journals A new simplified method for efficient extraction of solar cells and modules parameters from datasheet information

2021 ◽  
Author(s):  
Fahmi F. Muhammadsharif
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Series Resistance ◽  
Peak Position ◽  
Saturation Current ◽  
Simulation Design ◽  
Shunt Resistance ◽  
Simplified Method ◽  
Efficient Extraction ◽  
Si Thin Film

Abstract An accurate and straightforward estimation of solar cells and modules parameters from the manufacturer’s datasheet is essential for the performance assessment, simulation, design, and quality control. In this work, a simple and efficient technique is reported to extract the parameters of solar cells and modules, namely ideality factor (n), series resistance (Rs), shunt resistance (Rsh), photocurrent (Iph) and saturation current (Io), from datasheet information. The method is based on defining the peak position of the function \(f\left(n,{R}_{sh}\right)=n\left({R}_{sh\_max}-{R}_{sh}\right)\), at which the five parameters are extracted. It was validated on four different technologies of solar cells and modules, including Poly-Si, Mono-Si, thin film and multijunction. Results showed that a simple and efficient extraction of the parameters can be realized by using this technique compared to that of the reported methods in literature.

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