Nitride Laser Diodes With InGaN Based Mqw Structures

1997 ◽  
Vol 482 ◽  
Author(s):  
Lisa Sugiura ◽  
Jobji Nishio ◽  
Masaaki Onomura ◽  
Shin-Ya Nunoue ◽  
Kazuhiko Itaya ◽  
...  
Keyword(s):  
Laser Diode ◽  
High Performance ◽  
Laser Diodes ◽  
Chemical Vapor ◽  
Dislocation Motion ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Mocvd Growth ◽  
Short Wavelength Light ◽  
Nitride Laser

AbstractAdvantages of applying III-V nitride materials for short wavelength light-emitting devices despite their extremely high dislocation density are discussed from the viewpoint of dislocation motion. There are also difficulties proper to these materials, which make it difficult to fabricate laser diodes. We present recent works to realize high performance laser diodes. We introduce the nitrogen ambient metalorganic chemical vapor deposition (MOCVD) growth which realizes the highly p-typed GaN films without any post-treatments. Some of our results respecting the room temperature pulsed operation of the conventional laser diode and the advanced inner stripe (IS) laser diode with InGaN based multi-quantum-well (MQW) grown by MOCVD are reported.

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

Growth and Characterization of AllnGaN/InGaN Heterostructures

1996 ◽  
Vol 423 ◽  
Author(s):  
J. C. Roberts ◽  
F. G. Mcintosh ◽  
M. Aumer ◽  
V. Joshkin ◽  
K. S. Boutros ◽  
...  
Keyword(s):  
High Performance ◽  
Visible Spectrum ◽  
Growth Conditions ◽  
Light Emitting ◽  
Mocvd Growth ◽  
Near Ultraviolet ◽  
Active Layers ◽  
Double Heterostructures ◽  
Lattice Matched

AbstractThe emission wavelength of the InxGa1−xN ternary system can span from the near ultraviolet through red regions of the visible spectrum. High quality double heterostructures with these InxGa1−xN active layers are essential in the development of efficient optoelectronic devices such as high performance light emitting diodes and laser diodes. We will report on the MOCVD growth and characterization of thick and thin InGaN films. Thick InxGa1−xN films with values of x up to 0.40 have been deposited and their photoluminescence (PL) spectra measured. AlGaN/InGaN/AlGaN double heterostructures (DHs) have been grown that exhibit PL emission in the violet, blue, green and yellow spectral regions, depending on the growth conditions of the thin InGaN active layer. Preliminary results of an AllnGaN/InGaN/AllnGaN DH, with the potential of realizing a near-lattice matched structure, will also be presented.

Molecular materials for micro-electronics

2000 ◽  
Vol 78 (3) ◽  
pp. 231-241 ◽  
Author(s):  
M D'Iorio
Keyword(s):  
High Performance ◽  
Organic Materials ◽  
Coming Of Age ◽  
Polymeric Materials ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Plastic Electronics ◽  
Organic Light ◽  
Recent Developments

Molecular organic materials have had an illustrious past but the ability to deposit these as homogeneous thin films has rejuvenated the field and led to organic light-emitting diodes (OLEDs) and the development of an increasing number of high-performance polymers for nonlinear and electronic applications. Whereas the use of organic materials in micro-electronics was restricted to photoresists for patterning purposes, polymeric materials are coming of age as metallic interconnects, flexible substrates, insulators, and semiconductors in all-plastic electronics. The focus of this topical review will be on organic light-emitting devices with a discussion of the most recent developments in electronic devices.PACS Nos.: 85.60Jb, 78.60Fi, 78.55Kz, 78.66Qn, 73.61Ph, 72.80Le

scholarly journals Luminescent zinc(ii) and copper(i) complexes for high-performance solution-processed monochromic and white organic light-emitting devices

2015 ◽  
Vol 6 (8) ◽  
pp. 4623-4635 ◽  
Author(s):  
Gang Cheng ◽  
Gary Kwok-Ming So ◽  
Wai-Pong To ◽  
Yong Chen ◽  
Chi-Chung Kwok ◽  
...  
Keyword(s):  
High Performance ◽  
Platinum Group Metals ◽  
Solution Processed ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Cie Coordinates ◽  
Organic Light Emitting Devices ◽  
Platinum Group

High performance orange (EQE up to 15.64%) and white (EQE up to 6.88%) solution processed OLEDs fabricated solely with emitters of non-platinum group metals were reported. The white device has CIE coordinates of (0.42, 0.44) and CRI of 81.

High-performance narrow spectrum green phosphorescent top-emitting organic light-emitting devices with external quantum efficiency up to 38%

2021 ◽  
Author(s):  
Xiaokang Li ◽  
Wenxing Liu ◽  
Kai Chen ◽  
Ruixia Wu ◽  
Guo-Jun Liu ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
High Performance ◽  
Cavity Length ◽  
Strong Dependence ◽  
Emission Peak ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Micro Cavity

Abstract In this work, we have experimentally demonstrated the efficacy of micro-cavity effect in realizing high-performance top-emitting organic light-emitting diodes (TEOLEDs). By optimizing the thickness of top Yb/Ag electrode and cavity length, highly efficient green TEOLED with external quantum efficiency as high as 38% was achieved. A strong dependence of electroluminescent (EL) performances and spectrum on cavity length was observed, and there was also a significant angle dependence of EL spectrum. Ultimately, ultra-high current efficiency up to 161.17 cd/A (3.2 V) was obtained by the device with emission peak at 552 nm, which is 35 nm longer than the intrinsic emission peak (517 nm) of utilized green emitter. Interestingly, this device displayed narrow emission with full-width at half-maximum (FWHM) of less than 20 nm, which was obtained by increasing the Ag layer thickness.

Silica coating enhances the stability of inorganic perovskite nanocrystals for efficient and stable down-conversion in white light-emitting devices

Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20131-20139 ◽  
Author(s):  
Fei Zhang ◽  
Zhi-Feng Shi ◽  
Zhuang-Zhuang Ma ◽  
Ying Li ◽  
Sen Li ◽  
...  
Keyword(s):  
White Light ◽  
High Performance ◽  
Silica Coating ◽  
White Led ◽  
Light Emitting ◽  
Perovskite Nanocrystals ◽  
Light Emitting Devices ◽  
Improved Stability ◽  
The Stability ◽  
Down Conversion

CsPbBr3 QDs/silica composites with substantially improved stability were applied as the color-converting layer for high-performance white LED fabrication.

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