scholarly journals The 355 nm Photolysis of Methyl Nitrite

1988 ◽  
Vol 9 (4-6) ◽  
pp. 195-208 ◽  
Author(s):  
C. G. Atkins ◽  
G. Hancock

Single photon laser induced fluorescence (LIF) has been used to study the NO fragment produced in its ground electronic state from the 355 nm photolysis of CH3ONO. Populations of rotational, vibrational, spin-orbit and lambda doublet components have been measured. The results are in broad agreement with previous two photon LIF studies, and confirm the dynamics of the process in which the NO fragment departs from an essentially planar CONO framework with non-statistical energy partitioning in the internal states of the products.

1983 ◽  
Vol 61 (5) ◽  
pp. 1023-1026 ◽  
Author(s):  
R. J. Donovan ◽  
C. Fotakis ◽  
A. Hopkirk ◽  
C. B. McKendrick ◽  
A. Torre

Rotationally resolved photofragment fluorescence from OH(A2Σ+) following the coherent two-photon excitation of H2O with a KrF laser (248 nm), is reported and the dynamics of the dissociation process are discussed. Fluorescence from CN(B2Σ+) following two-photon excitation of ICN is also described. In both cases the energy distribution in the photofragments is shown to differ significantly from that observed with single-photon excitation at closely similar energies.Two further examples of multiphoton excitation, involving CS2 and SO2, are briefly discussed. In these cases absorption of a further photon, by fragments produced in the primary step, gives rise to strong laser-induced fluorescence.


1983 ◽  
Vol 3 (1-6) ◽  
pp. 97-106 ◽  
Author(s):  
F. Lahmani ◽  
C. Lardeux ◽  
D. Solgadi

The photodissociation of methyl nitrite CH3ONO in three different electronically excited states has been studied by determining the internal state distribution of one of the photofragments. The fluorescence of NO A Σ2+ produced for excitation of CH3ONO between 1200 and 1650 Å and of CH3O 2 A1 produced at 1930 Å has been investigated. The vibrational distribution in both species can be explained by statistical considerations. The rotational excitation of NO A Σ2+ is of Boltzmann type. For CH3ONO excited in the first nπ* excited state at 3550 Å the NO X fragment has been probed by a two photon laser excited fluorescence technique. The nascent NO X υ″ = 0, 1, 2, 3 exhibit a population inversion and a high degree of rotational excitation.


2004 ◽  
Vol 82 (6) ◽  
pp. 1077-1082 ◽  
Author(s):  
Y J Shi ◽  
S Wang ◽  
Z J Jakubek ◽  
B Simard

The vacuum ultraviolet laser single-photon zero kinetic energy (ZEKE) photoelectron spectrum of the [Formula: see text]2E3/2 ground electronic state of the methyl bromide cation is reported. The spectrum is dominated by the origin band 000 of the transition [Formula: see text]2E3/2 ← [Formula: see text]1A1. In addition, the 210 band and the 311 hot band are observed. All observed bands show similar rotational contours. Simulation of the rotational contour of the origin band yields the first ionization energy of methyl bromide (85 031.2 ± 1.0 cm–1) and the rotational constants of the cation in its ground electronic state. Key words: methyl bromide, vacuum ultraviolet laser, single-photon excitation, zero kinetic energy photoelectron spectroscopy.


1991 ◽  
Author(s):  
R. MILES ◽  
W. LEMPERT ◽  
V. KUMAR ◽  
G. DISKIN

Author(s):  
V. Pouget ◽  
E. Faraud ◽  
K. Shao ◽  
S. Jonathas ◽  
D. Horain ◽  
...  

Abstract This paper presents the use of pulsed laser stimulation with picosecond and femtosecond laser pulses. We first discuss the resolution improvement that can be expected when using ultrashort laser pulses. Two case studies are then presented to illustrate the possibilities of the pulsed laser photoelectric stimulation in picosecond single-photon and femtosecond two-photon modes.


Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 930
Author(s):  
Xiaoying Huang ◽  
Rongbin Su ◽  
Jiawei Yang ◽  
Mujie Rao ◽  
Jin Liu ◽  
...  

In this work, we successfully achieved wafer-scale low density InAs/GaAs quantum dots (QDs) for single photon emitter on three-inch wafer by precisely controlling the growth parameters. The highly uniform InAs/GaAs QDs show low density of μ0.96/μm2 within the radius of 2 cm. When embedding into a circular Bragg grating cavity on highly efficient broadband reflector (CBR-HBR), the single QDs show excellent optoelectronic properties with the linewidth of 3± 0.08 GHz, the second-order correlation factor g2(τ)=0.0322 ±0.0023, and an exciton life time of 323 ps under two-photon resonant excitation.


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