ABSTRACTThe development of new materials for organic/plastic electronics allows us to fabricate novel devices through unconventional approaches. The ‘soft lithography technique’ has been widely used in replicating and fabricating small features. This technique is a low cost alternative to photolithography by generating structures from masters to substrates, which employ ‘elastomeric materials’, such as highly stretchable silicon elastomer, polydimethylsiloxane (PDMS) to replicate or transfer the original features to a variety of substrates by molding and printing processes. Since the resolution of pattern transfer significantly relies on the performance of polydimethylsiloxane (PDMS) stamp materials, commercial PDMS materials have shown limitations in high fidelity pattern transfer due to their low physical toughness and high thermal expansion coefficients. For those reasons, pattern fabrications using conventional PDMS materials are unable to satisfy our set of diverse demands, especially in the area of nano-scale replication. To achieve high performance in molding and printing, here we introduce a new strategy, design and synthesis of a modified PDMS silicon elastomer that is a stiffer and photocurable element to achieve our specific task of nano-scale resolution soft lithography. We then demonstrated its unique capabilities for the case of nano-features (300 nm wide) with narrow and tall heights (600 nm height) of photoresist, which is one of the most challenging ‘nano-patterning’ tasks in advanced soft lithography, which is often limited in its use at the nano-scale with other commercially available elastomers.
Selective Pattern Transfer of Nano-Scale Features Generated by FE-SPL in 10 nm Thick Resist Layers
