Effect of Heat Treatment in Aluminium Oxide Preparation by UV/Ozone Oxidation for Organic Thin-Film Transistors

2013 ◽  
Vol 13 (7) ◽  
pp. 5182-5185
Author(s):  
Krishna Chytanya Chinnam ◽  
Helena Gleskova
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Thin Film Transistors ◽  
Aluminium Oxide ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Ozone Oxidation ◽  
Uv Ozone

Characterization of F16CuPc Organic Thin-film Transistors Fabricated Using Various Heat-treatment Conditions

2013 ◽  
Vol 63 (11) ◽  
pp. 1259-1263
Author(s):  
Nayun YOO ◽  
Sujin LEE ◽  
Yongjae KIM ◽  
Jongwon PARK ◽  
Hanju LEE ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Treatment ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Treatment Conditions

High mobility solution-processed C8-BTBT organic thin-film transistors via UV-ozone interface modification

2017 ◽  
Vol 5 (40) ◽  
pp. 10652-10659 ◽  
Author(s):  
Weiyao Wei ◽  
Cheng Yang ◽  
Jiaying Mai ◽  
Yanfen Gong ◽  
Longsen Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Dielectric Surface ◽  
Organic Thin Film Transistors ◽  
Ozone Exposure ◽  
Organic Thin Film ◽  
Interface Modification ◽  
Mobility Solution ◽  
Uv Ozone

UV-ozone exposure directly on the dielectric surface to get an OTFT mobility as high as 6.50 cm2(V s)−1.

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Photo-Induced Threshold and Onset Voltage Shifts in Organic Thin-Film Transistors

2013 ◽  
Vol E96.C (11) ◽  
pp. 1360-1366 ◽  
Author(s):  
Ichiro FUJIEDA ◽  
Tse Nga NG ◽  
Tomoya HOSHINO ◽  
Tomonori HANASAKI
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Onset Voltage
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