Optical Temperature Sensor Based on Infrared Excited Green Upconversion Emission in Hexagonal Phase NaLuF4:Yb3+/Er3+ Nanorods

2016 ◽  
Vol 16 (4) ◽  
pp. 3641-3645 ◽  
Author(s):  
Dongyu Li ◽  
Linlin Tian ◽  
Zhen Huang ◽  
Lexi Shao ◽  
Jun Quan ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Hexagonal Phase ◽  
Upconversion Emission ◽  
Excitation Power ◽  
Temperature Sensitive ◽  
Potential Candidate ◽  
Excitation Power Density ◽  
Fluorescence Intensity Ratio ◽  
Optical Temperature Sensor ◽  
Upconversion Emissions

Hexagonal phase NaLuF4:Yb3+/Er3+ nanorods were synthesized hydrothermally. An analysis of the intense green upconversion emissions at 525 nm and 550 nm in hexagonal phase NaLuF4:Yb3/+Er3+ nanorods under excitation power density of 4.2 W/cm2 available from a diode laser emitting at 976 nm, have been undertaken. Fluorescence intensity ratio (FIR) variation of temperature-sensitive green upconversion emissions at 525 nm and 550 nm in this material was recorded in the physiological range from 295 to 343 K. The maximum sensitivity derived from the FIR technique of the green upconversion emissions is approximately 0.0044 K−1. Experimental results implied that hexagonal phase NaLuF4:Yb3/+Er3+ nanorods was a potential candidate for optical temperature sensor.

Optical temperature sensor through infrared excited blue upconversion emission in Tm3+/Yb3+ codoped Y2O3

2012 ◽  
Vol 285 (7) ◽  
pp. 1925-1928 ◽  
Author(s):  
Dongyu Li ◽  
Yuxiao Wang ◽  
Xueru Zhang ◽  
Kun Yang ◽  
Lu Liu ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Upconversion Emission ◽  
Optical Temperature Sensor

scholarly journals Novel optical temperature sensor based on emission in Pr3+ doped ferroelectric Ba0.7Sr0.3TiO3

RSC Advances ◽  
2018 ◽  
Vol 8 (42) ◽  
pp. 23996-24001 ◽  
Author(s):  
Tang Wei ◽  
Ni Haiyong ◽  
Zhang Qiuhong ◽  
Ding Jianhong
Keyword(s):  
Rare Earth ◽  
Fluorescence Intensity ◽  
Temperature Sensor ◽  
Intensity Ratio ◽  
Temperature Sensing ◽  
Fluorescence Intensity Ratio ◽  
Optical Temperature Sensor

Optical temperature sensing based on the variation of the fluorescence intensity ratio of rare-earth materials has become appealing due to its multiple superiorities over electrical temperature sensing.

scholarly journals Pumping-controlled multicolor modulation of upconversion emission for dual-mode dynamic anti-counterfeiting

Nanophotonics ◽  
2020 ◽  
Vol 9 (6) ◽  
pp. 1519-1528
Author(s):  
Xiaoru Dai ◽  
Ke Wang ◽  
Lei Lei ◽  
Shiqing Xu ◽  
Yao Cheng ◽  
...  
Keyword(s):  
Photon Number ◽  
Upconversion Emission ◽  
Excitation Power ◽  
Color Variation ◽  
Excitation Power Density ◽  
Dual Mode ◽  
Emission Color ◽  
Ultrahigh Sensitivity ◽  
Infrared Excitation ◽  
The Difference

AbstractLanthanide up-conversion features stepwise multi-photon processes, where the difference in photon number that is required for specific up-conversion process usually leads to significant variance in pumping-related processes/properties. In this work, a pumping-controlled dual-mode anti-counterfeiting strategy is conceived by taking advantage of the combination of up-conversion processes with different photon numbers. The combination of Er3+ and Tm3+, which are spatially separated within a designed core/triple-shell nano-architecture, is taken as an example to illustrate such idea. Upon infrared excitation, the emission color of a designed pattern can be switched from red to purple by increasing the excitation power density from 5 to 11 W/cm2, while a bright luminescent trajectory including red, white and blue-green color with different length is observed when rotating the pattern above 600 rpm. In addition, the relative up-conversion emission intensities of the Er3+ and Tm3+ ions can be manipulated through tailoring interfacial or inner defects in the core/triple-shell nano-crystals, which enable an ultrahigh sensitivity for the pumping-controlled emission color variation to be observed under excitation power well below 11 W/cm2.

Optical Temperature Sensor Through Upconversion Emission from the Er3+ Doped SrBi8Ti7O27 Ferroelectrics

2016 ◽  
Vol 45 (6) ◽  
pp. 2745-2749 ◽  
Author(s):  
Hua Zou ◽  
Xusheng Wang ◽  
Yifeng Hu ◽  
Xiaoqing Zhu ◽  
Yongxing Sui ◽  
...  
Keyword(s):  
Temperature Sensor ◽  
Upconversion Emission ◽  
Optical Temperature Sensor

A method for correcting the excitation power density dependence of upconversion emission due to laser-induced heating

2018 ◽  
Vol 82 ◽  
pp. 65-70 ◽  
Author(s):  
Reetu E. Joseph ◽  
Dmitry Busko ◽  
Damien Hudry ◽  
Guojun Gao ◽  
Daniel Biner ◽  
...  
Keyword(s):  
Density Dependence ◽  
Power Density ◽  
Upconversion Emission ◽  
Excitation Power ◽  
Excitation Power Density

A High-Speed Temperature Sensor with Low Supply Sensitivity for SoC Thermal Monitoring

2018 ◽  
Vol 27 (07) ◽  
pp. 1850116
Author(s):  
Yuanxin Bao ◽  
Wenyuan Li
Keyword(s):  
Temperature Sensor ◽  
Conversion Rate ◽  
High Speed ◽  
Supply Voltage ◽  
Ring Oscillator ◽  
Temperature Sensitive ◽  
Cmos Process ◽  
Digital Code ◽  
Thermal Monitoring ◽  
Worst Case

A high-speed low-supply-sensitivity temperature sensor is presented for thermal monitoring of system on a chip (SoC). The proposed sensor transforms the temperature to complementary to absolute temperature (CTAT) frequency and then into digital code. A CTAT voltage reference supplies a temperature-sensitive ring oscillator, which enhances temperature sensitivity and conversion rate. To reduce the supply sensitivity, an operational amplifier with a unity gain for power supply is proposed. A frequency-to-digital converter with piecewise linear fitting is used to convert the frequency into the digital code corresponding to temperature and correct nonlinearity. These additional characteristics are distinct from the conventional oscillator-based temperature sensors. The sensor is fabricated in a 180[Formula: see text]nm CMOS process and occupies a small area of 0.048[Formula: see text]mm2 excluding bondpads. After a one-point calibration, the sensor achieves an inaccuracy of [Formula: see text][Formula: see text]1.5[Formula: see text]C from [Formula: see text]45[Formula: see text]C to 85[Formula: see text]C under a supply voltage of 1.4–2.4[Formula: see text]V showing a worst-case supply sensitivity of 0.5[Formula: see text]C/V. The sensor maintains a high conversion rate of 45[Formula: see text]KS/s with a fine resolution of 0.25[Formula: see text]C/LSB, which is suitable for SoC thermal monitoring. Under a supply voltage of 1.8[Formula: see text]V, the maximum energy consumption per conversion is only 7.8[Formula: see text]nJ at [Formula: see text]45[Formula: see text]C.

scholarly journals Nano-Crystallization of Ln-Fluoride Crystals in Glass-Ceramics via Inducing of Yb3+ for Efficient Near-Infrared Upconversion Luminescence of Tm3+

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1033
Author(s):  
Jianfeng Li ◽  
Yi Long ◽  
Qichao Zhao ◽  
Shupei Zheng ◽  
Zaijin Fang ◽  
...  
Keyword(s):  
Crystal Structures ◽  
Near Infrared ◽  
Upconversion Luminescence ◽  
Glass Ceramics ◽  
Upconversion Emission ◽  
Ceramic Composites ◽  
Wide Range ◽  
Transmission Window ◽  
Optical Applications ◽  
Upconversion Emissions

Transparent glass-ceramic composites embedded with Ln-fluoride nanocrystals are prepared in this work to enhance the upconversion luminescence of Tm3+. The crystalline phases, microstructures, and photoluminescence properties of samples are carefully investigated. KYb3F10 nanocrystals are proved to controllably precipitate in the glass-ceramics via the inducing of Yb3+ when the doping concentration varies from 0.5 to 1.5 mol%. Pure near-infrared upconversion emissions are observed and the emission intensities are enhanced in the glass-ceramics as compared to in the precursor glass due to the incorporation of Tm3+ into the KYb3F10 crystal structures via substitutions for Yb3+. Furthermore, KYb2F7 crystals are also nano-crystallized in the glass-ceramics when the Yb3+ concentration exceeds 2.0 mol%. The upconversion emission intensity of Tm3+ is further enhanced by seven times as Tm3+ enters the lattice sites of pure KYb2F7 nanocrystals. The designed glass ceramics provide efficient gain materials for optical applications in the biological transmission window. Moreover, the controllable nano-crystallization strategy induced by Yb3+ opens a new way for engineering a wide range of functional nanomaterials with effective incorporation of Ln3+ ions into fluoride crystal structures.

The sensitization of laser-induced heat of Er3+ doped Y2O3 nanocrystals by codoped with Mn2+

2015 ◽  
Vol 29 (22) ◽  
pp. 1550158
Author(s):  
Yunfeng Bai ◽  
Minjie Luan ◽  
Linjun Li ◽  
Zhelong He ◽  
Dongyu Li
Keyword(s):  
Power Density ◽  
Thermal Emission ◽  
Energy Levels ◽  
Excitation Power ◽  
Threshold Power ◽  
Excitation Power Density ◽  
Ir Laser ◽  
Order Of Magnitude ◽  
Low Threshold ◽  
Density Threshold

Low threshold power density cw laser-induced heat has been observed in [Formula: see text] and [Formula: see text] codoped [Formula: see text] nanocrystals under excitation by a 980 nm IR laser. Codoped [Formula: see text] remarkably reduces the power density threshold of laser-induced heat compared with [Formula: see text] doped [Formula: see text] nanocrystals. When the excitation power density exceed [Formula: see text], [Formula: see text] codoped [Formula: see text] nanocrystals emit strong blackbody radiation. The thermal emission of [Formula: see text] should originate from the multiphonon relaxation between neighboring energy levels. One additional UC-PL enhancement is observed. The UC-PL intensity can be enhanced by an order of magnitude through high temperature calcination caused by light into heat.

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

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