Design Optimization of 1T Dynamic Random Access Memory Based on Pillar Type Tunneling Field-Effect Transistor with Surrounding Gate Structure
2017 ◽
Vol 17
(5)
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pp. 2906-2911
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2018 ◽
Vol 57
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pp. 04FG03
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1996 ◽
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(Part 1, No. 2B)
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pp. 865-868
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2013 ◽
Vol 52
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pp. 04CE08
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pp. 5-14
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2010 ◽
Vol 49
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pp. 040209
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Vol 18
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pp. 5919-5924
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2020 ◽
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pp. 6596-6602
2008 ◽
Vol 96
(1)
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pp. 69-74
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