Deformation Behavior and Critical Shear Stress of Copper Nanocontacts Studied by In Situ Transmission Electron Microscopy

2018 ◽  
Vol 18 (1) ◽  
pp. 90-94
Author(s):  
Koichi Onda ◽  
Tokushi Kizuka
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Shear Stress ◽  
Deformation Behavior ◽  
Critical Shear Stress ◽  
Transmission Electron

In Situ Transmission Electron Microscopy Investigation of the Deformation Behavior of Cu with Nanoscale Twins

2009 ◽  
Vol 633-634 ◽  
pp. 63-72 ◽  
Author(s):  
Y. B. Wang ◽  
M.L. Sui
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Deformation Behavior ◽  
Emission Sources ◽  
Dislocation Emission ◽  
Ultrahigh Strength ◽  
Transmission Electron ◽  
Microscopy Investigation ◽  
Electron Microscopy Investigation

This paper reviews our recent studies on the effect of twin boundary (TB) on the deformation behavior in Cu with nanoscale growth twins. In situ straining transmission electron microscopy investigations on TB migration, TBs and twin ends acting as dislocation emission sources, and the interactions between dislocations and TBs are highlighted. Results provide some useful understanding of why Cu with nanoscale twins leads to a combination of ultrahigh strength and high ductility.

Role of Interface Boundaries in the Deformation Behavior of TiAl Polysynthetically Twinned Crystal: In situ Transmission Electron Microscopy Deformation Study

2005 ◽  
Vol 20 (7) ◽  
pp. 1888-1901 ◽  
Author(s):  
Sung G. Pyo ◽  
Nack J. Kim
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Deformation Behavior ◽  
Localized Deformation ◽  
Deformation Twins ◽  
Thin Foils ◽  
Transmission Electron ◽  
Longitudinal Orientation

To understand the role of boundaries in the deformation behavior of TiAl, in situ straining experiments in transmission electron microscopy have been performed on thin foils of polysynthetically twinned (PST) crystal of Ti–49.3 at.% Al. The deformation behavior of PST TiAl is anisotropic, depending on the angle between the lamellar boundaries and the straining axes. For L-orientation, deformation twins and ordinary dislocations transmit across the true-twin (TT) boundaries but are reflected at the pseudo-twin (PT) and rotational order-fault (RO) boundaries. For transverse (T) orientation, deformation twins are transmitted across all TT, PT, and RO boundaries. For I-orientation, shear deformation occurs parallel to the lamellar boundaries. There is a transmission of deformation across the interphase (IP) boundary in longitudinal orientation, but deformation is blocked and reflected at the IP boundary in T-orientation. The role of the various types of boundaries in localized deformation behavior was evaluated by considering Schmid factors and geometric compatibility factors.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

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