Analysis of Thermal Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Using Micro-Raman Spectroscopy

2021 ◽  
Vol 21 (11) ◽  
pp. 5736-5741
Author(s):  
Jengsu Yoo ◽  
Soo-Kyung Chang ◽  
Gunwoo Jung ◽  
Kyuheon Kim ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Thermal Characteristics ◽  
Electrode Structure ◽  
Self Heating ◽  
Gate Structure ◽  
Heating Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We investigated the heat dissipation in heterostructure field-effect transistors (HFETs) using microRaman measurement of the temperature in active AIGaN/GaN. By varying the gate structure, the heat dissipation through the gate was clearly revealed. The temperature increased to 120 °C at the flat gate device although the inserted gate increased to only 37 °C. Our results showed that the inserted gate structure reduced the self-heating effect by three times compared to the flat gate structure. Temperature mapping using micro-Raman measurement confirmed that the temperature of the near gate area was lower than that of the near drain area. This indicated that the inserted gate electrode structure effectively prohibited self-heating effects.

Self-Heating Effects in High-Power AlGaN/GaN HFETs

2001 ◽  
Vol 693 ◽  
Author(s):  
M. Kuball ◽  
M.J. Uren ◽  
J.M. Hayes ◽  
T. Martin ◽  
J.C.H. Birbeck ◽  
...  
Keyword(s):  
Heat Dissipation ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Non Invasive ◽  
Self Heating ◽  
Heating Effects ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Temperature Maps ◽  
Better Than

AbstractWe report on the non-invasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN heterostructure field effect transistors (HFETs). Micro-Raman spectroscopy was used to produce temperature maps with ≈1 μm spatial resolution and a temperature accuracy of better than 10°C. Significant self-heating effects in the source-drain opening of AlGaN/GaN HFETs were measured. Devices grown on sapphire and SiC substrates were compared. Three-dimensional finite-difference heat dissipation calculations were performed as function of device geometry.

scholarly journals The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

2003 ◽  
Vol 8 ◽  
Author(s):  
K.A. Filippov ◽  
A.A. Balandin
Keyword(s):  
Temperature Rise ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Boundary Resistance ◽  
Heat Diffusion ◽  
Thermal Boundary Resistance ◽  
Device Layer ◽  
Self Heating ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.

scholarly journals Al2O3Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

2004 ◽  
Vol 43 (No. 6B) ◽  
pp. L777-L779 ◽  
Author(s):  
Tamotsu Hashizume ◽  
Sanguan Anantathanasarn ◽  
Noboru Negoro ◽  
Eiichi Sano ◽  
Hideki Hasegawa ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Barrier Layers ◽  
Gate Structure ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

2012 ◽  
Vol 9 (3-4) ◽  
pp. 911-914 ◽  
Author(s):  
Martin Mikulics ◽  
Hilde Hardtdegen ◽  
Andreas Winden ◽  
Alfred Fox ◽  
Michel Marso ◽  
...  
Keyword(s):  
Residual Strain ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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