Two-dimensional model for double-gate LDMOSFET devices

Journal of Computational Electronics ◽

10.1007/s10825-019-01354-y ◽

2019 ◽

Vol 18 (3) ◽

pp. 882-892 ◽

Author(s):

Mohamed M. El-Dakroury ◽

Zaki Nosseir ◽

Yehea I. Ismail ◽

Hamdy Abdelhamid

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model

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Numerical Corrections to Estimate Depletion Region Width in Pseudo-two-dimensional Model of Double-Gate Tunneling FET

10.1109/niles53778.2021.9600561 ◽

2021 ◽

Author(s):

Muhammad Elgamal ◽

Ahmed Shaker

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Tunneling Fet ◽

Two Dimensional Model ◽

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A Two-Dimensional Model for the Surface Potential and Subthreshold Current of Doped Double-Gate (DG) MOSFETs with a Vertical Gaussian-Like Doping Profile

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2010.1119 ◽

2010 ◽

Vol 5 (3) ◽

pp. 332-339 ◽

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Surface Potential ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Subthreshold Current ◽

Two Dimensional Model

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Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

Superlattices and Microstructures ◽

10.1016/j.spmi.2017.03.047 ◽

2017 ◽

Vol 106 ◽

pp. 147-155 ◽

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Balraj Singh ◽

Kunal Singh ◽

Satyabrata Jit

Keyword(s):

Subthreshold Swing ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Subthreshold Current ◽

Two Dimensional Model ◽

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A two-dimensional model for the subthreshold swing of short-channel double-gate metal–oxide–semiconductor field effect transistors with a vertical Gaussian-like doping profile

Journal of Applied Physics ◽

10.1063/1.3552309 ◽

2011 ◽

Vol 109 (5) ◽

pp. 054508 ◽

Author(s):

Sarvesh Dubey ◽

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Doping Profile ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Short Channel ◽

Two Dimensional Model

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Two-dimensional model for asymmetric double-gate tunnel FET considering the source-channel junction depletion region

2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2015.7158548 ◽

2015 ◽

Author(s):

Hongfei Lv ◽

Shingo Sato ◽

Yasuhisa Omura ◽

Abhijit Mallik

Keyword(s):

Depletion Region ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model

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Two-dimensional model of Dual Metal double gate tunnel FETs

2015 IEEE International WIE Conference on Electrical and Computer Engineering (WIECON-ECE) ◽

10.1109/wiecon-ece.2015.7444001 ◽

2015 ◽

Author(s):

Samantha Lubaba Noor ◽

Samia Safa ◽

Md. Ziaur Rahman Khan

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model ◽

Tunnel Fets ◽

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Pseudo-Two-Dimensional Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2040661 ◽

2010 ◽

Vol 57 (4) ◽

pp. 827-834 ◽

Author(s):

Marie Garcia Bardon ◽

Herc P. Neves ◽

Robert Puers ◽

Chris Van Hoof

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model ◽

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Two-dimensional model of symmetrical double-gate strained Si single Halo metal-oxide semiconductor field effect transistor with gate stack dielectric

Acta Physica Sinica ◽

10.7498/aps.63.248502 ◽

2014 ◽

Vol 63 (24) ◽

pp. 248502

Author(s):

Xin Yan-Hui ◽

Liu Hong-Xia ◽

Wang Shu-Long ◽

Fan Xiao-Jiao

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Strained Si ◽

Two Dimensional Model ◽

Effect Transistor

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A New Two-dimensional Model for Asymmetrical Dual Gate Material Double-Gate (ADMDG) MOSFET's

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450070 ◽

2007 ◽

Author(s):

T. K. Chiang ◽

T. H. Chiang

Keyword(s):

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Two Dimensional Model ◽

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Two Dimensional Model for Threshold Voltage Roll-Off of Short Channel High-k Gate-Stack Double-Gate (DG) MOSFETs

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_48 ◽

2014 ◽

pp. 193-196 ◽

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Gopal Rawat ◽

Mirgender Kumar ◽

Sarvesh Dubey ◽

...

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Two Dimensional ◽

Dimensional Model ◽

Short Channel ◽

High K ◽

Two Dimensional Model

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