GHz Range Frequency Characterization of Moderately Inverted Sub-100 nm Gate Underlap Silicon-on-Insulator-Metal-Oxide-Semiconductor Field Effect Transistors

2016 ◽  
Vol 11 (4) ◽  
pp. 514-522
Author(s):  
Indra Vijay Singh ◽  
M. S. Alam ◽  
G. A. Armstrong
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Gate Underlap

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

2009 ◽  
Vol 48 (9) ◽  
pp. 091201
Author(s):  
Jong Pil Kim ◽  
Jae Young Song ◽  
Sang Wan Kim ◽  
Jae Hyun Park ◽  
Woo Young Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor
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