Comprehending and Analyzing the Quasi-Ballistic Transport in Ultra Slim Nano-MOSFET Through Conventional Scattering Model

2019 ◽  
Vol 14 (1) ◽  
pp. 80-91
Author(s):  
Yashu Swami ◽  
Sanjeev Rai
Keyword(s):  
Ballistic Transport ◽  
Scattering Model ◽  
Nano Mosfet

scholarly journals Research on shot noise suppression in quasi-ballistic transport nano-mOSFET

2012 ◽  
Vol 61 (12) ◽  
pp. 127202
Author(s):  
Jia Xiao-Fei ◽  
Du Lei ◽  
Tang Dong-He ◽  
Wang Ting-Lan ◽  
Chen Wen-Hao
Keyword(s):  
Shot Noise ◽  
Noise Suppression ◽  
Ballistic Transport ◽  
Shot Noise Suppression ◽  
Nano Mosfet

A New Backscattering Model Giving a Description of the Quasi-Ballistic Transport in Nano-MOSFET

2005 ◽  
Vol 52 (10) ◽  
pp. 2280-2289 ◽  
Author(s):  
E. Fuchs ◽  
P. Dollfus ◽  
G. LeCarval ◽  
S. Barraud ◽  
D. Villanueva ◽  
...  
Keyword(s):  
Ballistic Transport ◽  
Nano Mosfet

Long-range ballistic transport mechanisms in superconducting spintronics

2016 ◽  
Vol 186 (6) ◽  
pp. 640-646
Author(s):  
Alexei V. Samokhvalov ◽  
Alexander S. Mel'nikov ◽  
Alexander I. Buzdin
Keyword(s):  
Long Range ◽  
Ballistic Transport ◽  
Transport Mechanisms

An Image Dehazing Algorithm Based on Improved Atmospheric Scattering Model

2019 ◽  
Vol 31 (7) ◽  
pp. 1148 ◽  
Author(s):  
Xinnan Fan ◽  
Shuyue Ye ◽  
Pengfei Shi ◽  
Xuewu Zhang ◽  
Jinxiang Ma
Keyword(s):  
Image Dehazing ◽  
Scattering Model ◽  
Atmospheric Scattering ◽  
Atmospheric Scattering Model

Nanoscale transistors

2017 ◽  
Author(s):  
Sandip Tiwari
Keyword(s):  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Dimensional Change ◽  
Real Space ◽  
Operational Characteristics ◽  
Statistical Variations ◽  
Channel Transport ◽  
And Control ◽  
Long Channel ◽  
Detailed Nature

This chapter brings together the physical underpinnings of field-effect transistors operating in their nanoscale limits. It tackles the change in dominant behavior from scattering-limited long-channel transport to mesoscopic and few scattering events limits in quantized channels. It looks at electrostatics and a transistor’s controllability as dimensions are shrunk—the interplay of geometry and control—and then brings out the operational characteristics in “off”-state, e.g., the detailed nature of insulator’s implications or threshold voltage’s statistical variations grounded in short-range and long-range effects, and “on”-state, where quantization, quantized channels, ballistic transport and limited scattering are important. It also explores the physical behavior for zero bandgap and monoatomic layer materials by focusing on real-space and reciprocal-space funneling as one of the important dimensional change consequences through a discussion of parasitic resistances.

Ballistic transport and quantum interference in InSb nanowire devices

2017 ◽  
Vol 26 (2) ◽  
pp. 027305 ◽  
Author(s):  
Sen Li ◽  
Guang-Yao Huang ◽  
Jing-Kun Guo ◽  
Ning Kang ◽  
Philippe Caroff ◽  
...  
Keyword(s):  
Quantum Interference ◽  
Ballistic Transport
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