Ballistic transport and quantum interference in InSb nanowire devices

2017 ◽  
Vol 26 (2) ◽  
pp. 027305 ◽  
Author(s):  
Sen Li ◽  
Guang-Yao Huang ◽  
Jing-Kun Guo ◽  
Ning Kang ◽  
Philippe Caroff ◽  
...  
2021 ◽  
Author(s):  
Josef Weinbub ◽  
Mauro Ballicchia ◽  
Mihail Nedjalkov

Abstract Inspired by using the wave nature of electrons for electron quantum optics, we propose a new type of electron quantum interference logic device (eQILD), where an electron wave is coherently injected into a two-dimensional wave guide and controlled via two gates. Interference effects lead to different current levels in output channels and are utilized for classical logic gates. eQILDs can be reconfigured and support parallelism and multi-valued logic. The operating principle as well as realizations of a logic NAND and NOR gate is shown by means of dynamic quantum Wigner and classical simulations considering coherent/ballistic transport. Contrary to other advanced information processing approaches no magnetic or photonic mechanisms are required. The eQILD is inherently compatible with conventional integrated circuits and thus provides an attractive alternative towards advanced low-power information processing devices with the performance only limited by the single-electron source frequency, i.e., in the GHz regime.


2007 ◽  
Vol 21 (08n09) ◽  
pp. 1674-1680
Author(s):  
IGOR TRALLE ◽  
WIOLETTA PAŚKO

In the paper a theory of quantum interference in a loop structure caused by spin coherent transport and the Larmor precession of the electron spin is presented. The 'spin ballistic' regime is supposed to occur when the phase relaxation length of the spin part of electron wave function is much greater than the phase relaxation length of the 'orbital' part. If magnetic fields in two arms of the structure are different, the spin part of the wave function acquires a phase shift due to spin precession around the field. If the structure length L is chosen to be [Formula: see text], It is possible to 'wash out' the quantum interference related to the phase coherence of the 'orbital part' of the wave function, retaining at the same time that related to the phase coherence of the spin part and to reveal the corresponding conductance oscillations. Different mechanisms of spin relaxation as well as their influence on the spin transport are considered. The quantum interference in the time-dependent magnetic field is also discussed and similarities between this effect and Josephson one, as well as their differences are considered.


2021 ◽  
Author(s):  
Josef Weinbub ◽  
Mauro Ballicchia ◽  
Mihail Nedjalkov

Abstract Recent advances in electron quantum optics show the breathtaking progress in utilizing the electron's wave nature. Inspired by these advances, we propose a new type of electron quantum interference logic device (eQILD), where an electron wave is coherently injected into a two-dimensional (2D) wave guide and controlled via two gates. Interference effects lead to different current levels in output channels and are utilized for classical logic gates. The operating principle is shown by means of dynamic quantum Wigner and classical simulations considering coherent/ballistic transport. Contrary to other advanced information processing approaches no magnetism nor bosonic systems are required. The eQILD is inherently compatible with conventional integrated circuits and thus provides an attractive alternative towards advanced low-power information processing devices with the performance only limited by the single-electron source frequency being in the GHz regime.


Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 309
Author(s):  
Jie Gu ◽  
Qingzhu Zhang ◽  
Zhenhua Wu ◽  
Jiaxin Yao ◽  
Zhaohao Zhang ◽  
...  

A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band structure experimentally. In addition, the pronounced ballistic transport characteristics were demonstrated in the GAA Si NW MOSFET. Due to the existence of spacers for the typical MOSFET, the quantum interference was also successfully achieved at lower bias.


1997 ◽  
Vol 71 (11) ◽  
pp. 1519-1521 ◽  
Author(s):  
Guido Goldoni ◽  
Fausto Rossi ◽  
Elisa Molinari

1999 ◽  
Vol 169 (4) ◽  
pp. 471 ◽  
Author(s):  
Z.D. Kvon ◽  
L.V. Litvin ◽  
V.A. Tkachenko ◽  
A.L. Aseev

2016 ◽  
Vol 186 (6) ◽  
pp. 640-646
Author(s):  
Alexei V. Samokhvalov ◽  
Alexander S. Mel'nikov ◽  
Alexander I. Buzdin

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