Stress Characterization of 4H-SiC Metal–Oxide–Semiconductor Field-Effect Transistor (MOSFET) using Raman Spectroscopy and the Finite Element Method
2002 ◽
Vol 57
(6)
◽
pp. 883-891
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2012 ◽
Vol 51
(4S)
◽
pp. 04DA04
◽
2008 ◽
Vol 47
(4)
◽
pp. 2538-2543
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