Channel Strain Measurement in 32-nm-Node Complementary Metal–Oxide–Semiconductor Field-Effect Transistor by Raman Spectroscopy

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DA04 ◽  
Author(s):  
Munehisa Takei ◽  
Hiroki Hashiguchi ◽  
Takuya Yamaguchi ◽  
Daisuke Kosemura ◽  
Kohki Nagata ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Metal Oxide ◽  
Strain Measurement ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm

1998 ◽  
Vol 37 (Part 1, No. 11) ◽  
pp. 5926-5931
Author(s):  
Masahiro Shimizu ◽  
Takashi Kuroi ◽  
Masahide Inuishi ◽  
Hideaki Arima ◽  
Haruhiko Abe ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Gate ◽  
Effect Transistor

scholarly journals CMOS-Based Physically Unclonable Functions: A Review and Tutorial

2021 ◽  
Author(s):  
Kamal Y. Kamal ◽  
Radu Muresan ◽  
Arafat Al-Dweik
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Physically Unclonable Functions ◽  
Effect Transistor

<p>This article reviews complementary metal-oxide-semiconductor (CMOS) based physically unclonable functions (PUFs) in terms of types, structures, metrics, and challenges. The article reviews and classifies the most basic PUF types. The article reviews the basic variations originated during a metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process. Random <a>variations</a> at transistor level lead to acquiring unique properties for electronic chips. These variations help a PUF system to generate a unique response. This article discusses various concepts which allow for more variations at CMOS technology, layout, masking, and design levels. It also discusses various PUF related topics.</p>

scholarly journals Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1303
Author(s):  
Hoontaek Lee ◽  
Junsoo Kim ◽  
Kumjae Shin ◽  
Wonkyu Moon
Keyword(s):  
Signal Processing ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Complementary Metal Oxide Semiconductor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Effect Transistor

We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The - characteristics of the inbuilt MOSFET reflect the design and fabrication modifications, and measurement of a buried electrode revealed improved ToGoFET imaging performance. The minimum measurable value was enhanced 20-fold.

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