Effects of impurity adsorption on topological surface states of Bi 2 Te 3

2017 ◽  
Vol 119 (4) ◽  
pp. 47001 ◽  
Author(s):  
Khaqan Shati ◽  
M. Arshad Farhan ◽  
S. Selva Chandrasekaran ◽  
Ji Hoon Shim ◽  
Geunsik Lee
2021 ◽  
pp. 2008411
Author(s):  
Jinjun Ding ◽  
Chuanpu Liu ◽  
Yuejie Zhang ◽  
Vijaysankar Kalappattil ◽  
Rui Yu ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Kyungchan Lee ◽  
Gunnar F. Lange ◽  
Lin-Lin Wang ◽  
Brinda Kuthanazhi ◽  
Thaís V. Trevisan ◽  
...  

AbstractTime reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi2 that belongs to the optimal space group P$$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy (EF). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.


2021 ◽  
Vol 118 (15) ◽  
pp. 154001
Author(s):  
Debarghya Mallick ◽  
Shoubhik Mandal ◽  
R. Ganesan ◽  
P. S. Anil Kumar

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Vishal Bhardwaj ◽  
Anupam Bhattacharya ◽  
Shivangi Srivastava ◽  
Vladimir V. Khovaylo ◽  
Jhuma Sannigrahi ◽  
...  

AbstractHalf-Heusler compounds exhibit a remarkable variety of emergent properties such as heavy-fermion behaviour, unconventional superconductivity and magnetism. Several of these compounds have been predicted to host topologically non-trivial electronic structures. Remarkably, recent theoretical studies have indicated the possibility to induce non-trivial topological surface states in an otherwise trivial half-Heusler system by strain engineering. Here, using magneto-transport measurements and first principles DFT-based simulations, we demonstrate topological surface states on strained [110] oriented thin films of YPdBi grown on (100) MgO. These topological surface states arise in an otherwise trivial semi-metal purely driven by strain. Furthermore, we observe the onset of superconductivity in these strained films highlighting the possibility of engineering a topological superconducting state. Our results demonstrate the critical role played by strain in engineering novel topological states in thin film systems for developing next-generation spintronic devices.


2014 ◽  
Vol 89 (12) ◽  
Author(s):  
Jianfeng Wang ◽  
Junwei Liu ◽  
Yong Xu ◽  
Jian Wu ◽  
Bing-Lin Gu ◽  
...  

2012 ◽  
Vol 7 (1-2) ◽  
pp. 148-150 ◽  
Author(s):  
Binghai Yan ◽  
Delin Zhang ◽  
Claudia Felser

2012 ◽  
Vol 100 (13) ◽  
pp. 131602 ◽  
Author(s):  
L. Zhao ◽  
Junwei Liu ◽  
Peizhe Tang ◽  
Wenhui Duan

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