ABSTRACTWe provide the widest estimate thus far of the range of tensile and compressive stress (−3.8 to 3.5 kbar) that GaN epitaxial material can withstand before relaxation occurs, and an unambiguous determination of the spin-orbit splitting Δso = 17.0 ± 1 meV for the material. These are achieved by analyzing 10K reflectance data for the energy separation of transitions between the uppermost valence bands and the lowest conduction band of wurtzitic GaN as a function of biaxial stress for a series of GaN films grown on both Al2O3 and 6H-SiC substrates. Our data explicitly show the nonlinear behavior of the excitonic energy splittings B-A and C-A vs. the energy position of the A exciton, which stands in contrast to the linear approximations used by previous workers analyzing material grown only on Al2O3 substrates. Further, the lineshape ambiguities present in GaN reflectance spectra that hindered the accurate determination of such excitonic energies have also been resolved by analyzing these data in reciprocal space, where critical point energies are determined by phase effects to an accuracy of ±0.5 meV.
Determination of the Li I 4d–4f Energy Separation Using Active Spectroscopy