scholarly journals High sensitive depleted MOSFET-based neutron dosimetry

2019 ◽  
Vol 18 ◽  
pp. 145
Author(s):  
M. Fragopoulou ◽  
V. Konstantakos ◽  
M. Zamani ◽  
S. Siskos ◽  
T. Laopoulos ◽  
...  
Keyword(s):  
Lithium Fluoride ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Fast Neutrons ◽  
Thermal Neutrons ◽  
Neutron Dosimetry ◽  
Effect Transistor ◽  
The One

A new dosemeter based on a depleted Metal-Oxide-Semiconductor field effect transistor, sensitive to both neutrons and gamma radiation was manufactured at LAAS-CNRS Laboratory, Toulouse France. In order to be used for neutron dosimetry a thin film of lithium fluoride was deposited on the surface of the gate of the device. The characteristics of the dosemeter such as its response to neutron dose were investigated. The response in thermal neutrons was found to be high. In fast neutrons the response was lower than that of thermal neutrons but higher than the one presented in literature.

scholarly journals 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3554
Author(s):  
Jaeyeop Na ◽  
Jinhee Cheon ◽  
Kwangsoo Kim
Keyword(s):  
Dynamic Characteristics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Switching Loss ◽  
Switching Speed ◽  
Polysilicon Gate ◽  
Effect Transistor ◽  
Switching Characteristics

In this paper, a novel 4H-SiC split heterojunction gate double trench metal-oxide-semiconductor field-effect transistor (SHG-DTMOS) is proposed to improve switching speed and loss. The device modifies the split gate double trench MOSFET (SG-DTMOS) by changing the N+ polysilicon split gate to the P+ polysilicon split gate. It has two separate P+ shielding regions under the gate to use the P+ split polysilicon gate as a heterojunction body diode and prevent reverse leakage `current. The static and most dynamic characteristics of the SHG-DTMOS are almost like those of the SG-DTMOS. However, the reverse recovery charge is improved by 65.83% and 73.45%, and the switching loss is improved by 54.84% and 44.98%, respectively, compared with the conventional double trench MOSFET (Con-DTMOS) and SG-DTMOS owing to the heterojunction.

Improving the accuracy of the charge-sheet model for the long-channel metal-oxide semiconductor field-effect transistor

1987 ◽  
Vol 65 (8) ◽  
pp. 995-998
Author(s):  
N. G. Tarr
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Inversion Layer ◽  
Potential Drop ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Analytic Approximation ◽  
Effect Transistor ◽  
Long Channel

It is shown that the accuracy of the charge-sheet model for the long-channel metal-oxide-semiconductor field-effect transistor can be improved by allowing for the small potential drop across the inversion layer, and by using a more accurate analytic approximation for the charge stored in the depletion region.

Effect of Metal - Silicon Nanowire Contacts on the Performance of Accumulation Metal Oxide Semiconductor Field Effect Transistor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Pranav Garg ◽  
Yi Hong ◽  
Md. Mash-Hud Iqbal ◽  
Stephen J. Fonash
Keyword(s):  
Metal Oxide ◽  
Silicon Nanowires ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Manufacturing Cost ◽  
Effect Transistor ◽  
The Impact

ABSTRACTRecently, we have experimentally demonstrated a very simply structured unipolar accumulation-type metal oxide semiconductor field effect transistor (AMOSFET) using grow-in-place silicon nanowires. The AMOSFET consists of a single doping type nanowire, metal source and drain contacts which are separated by a partially gated region. Despite its simple configuration, it is capable of high performance thereby offering the potential of a low manufacturing-cost transistor. Since the quality of the metal/semiconductor ohmic source and drain contacts impacts AMOSFET performance, we repot here on initial exploration of contact variations and of the impact of thermal process history. With process optimization, current on/off ratios of 106 and subthreshold swings of 70 mV/dec have been achieved with these simple devices

Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance

2012 ◽  
Vol 100 (10) ◽  
pp. 101603 ◽  
Author(s):  
Seok-Ho Song ◽  
Hyun-Ho Yang ◽  
Chang-Hoon Han ◽  
Seung-Deok Ko ◽  
Seok-Hee Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Humidity Sensor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Surface Conductance ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document