RUTHERFORD BACK SCATTERING USING HEAVY ION BEAMS

AbstractNew observations of x-ray spectra from foil-excited heavy ion beams are reported. By observing the target in a direction along the beam axis, an improvement in spectral resolution, δλ/λ, by about a factor of two is achieved, due to the reduced Doppler broadening in this geometry.

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Laser-cooled and trapped atoms as a precision target for heavy ion beams

Hyperfine Interactions ◽

10.1007/bf02274916 ◽

1996 ◽

Vol 99 (1) ◽

pp. 127-133 ◽

Cited By ~ 3

Author(s):

U. Schünemann ◽

I. Manek ◽

R. Grimm ◽

D. Habs ◽

D. Schwalm

Keyword(s):

Heavy Ion ◽

Ion Beams ◽

Trapped Atoms

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Effects of ion beam bombardment on electrochromic tungsten oxide films studied by X-ray photoelectron spectroscopy and Rutherford back-scattering

Thin Solid Films ◽

10.1016/s0040-6090(00)01204-9 ◽

2000 ◽

Vol 376 (1-2) ◽

pp. 131-139 ◽

Cited By ~ 58

Author(s):

H.Y. Wong ◽

C.W. Ong ◽

R.W.M. Kwok ◽

K.W. Wong ◽

S.P. Wong ◽

...

Keyword(s):

Tungsten Oxide ◽

Photoelectron Spectroscopy ◽

Ion Beam ◽

Oxide Films ◽

Rutherford Back Scattering ◽

X Ray ◽

Back Scattering

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Heavy-ion beams required for the RIA accelerator

Review of Scientific Instruments ◽

10.1063/1.1690478 ◽

2004 ◽

Vol 75 (5) ◽

pp. 1427-1430 ◽

Cited By ~ 5

Author(s):

R. C. Pardo ◽

C. L. Jiang ◽

J. N. Nolen ◽

K. E. Rehm ◽

G. Savard

Keyword(s):

Heavy Ion ◽

Ion Beams

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Carbon Nanotubes Grown on Metallic Wires by Cold Plasma Technique

MRS Proceedings ◽

10.1557/proc-737-f3.44 ◽

2002 ◽

Vol 737 ◽

Author(s):

D. Sarangi ◽

A. Karimi

Keyword(s):

Electron Microscopy ◽

Carbon Nanotubes ◽

Growth Conditions ◽

Effect Of Temperature ◽

Rutherford Back Scattering ◽

Novel Approach ◽

Transmission Electron ◽

Back Scattering ◽

Metallic Wires ◽

Metal Wires

ABSTRACTCarbon nanotubes on metallic wires may be act as electrode for the field emission (FE) luminescent devices. Growing nanotubes on metallic wires with controlled density, length and alignment are challenging issues for this kind of devices. We, in the present investigation grow carbon nanotubes directly on the metal wires by a powerful but simple technique. A novel approach has been proposed to align nanotubes during growth. Methane, acetylene and dimethylamine have been used as source gases. With the same growth conditions (viz. pressure, growth temperature and plasma) methane does not produce any nanotube but nanotubes grown with dimethylamine show shorter length and radius than acetylene. The effect of temperature to control the radius, time to control the density, plasma conditions to align the nanotubes has been focused. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Rutherford Back Scattering (RBS) are used to characterize the nanotubes.

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Compositional Effects on the Degradation of PVD-Tisin

MRS Proceedings ◽

10.1557/proc-473-241 ◽

1997 ◽

Vol 473 ◽

Author(s):

W. F. McArthur ◽

F. Deng ◽

K. Ring ◽

P. M. Pattison ◽

K. L. Kavanagh

Keyword(s):

Phase Separation ◽

Silicon Nitride ◽

Electron Diffraction ◽

Titanium Nitride ◽

Amorphous Matrix ◽

Barrier Material ◽

Rutherford Back Scattering ◽

Phase Line ◽

Back Scattering ◽

Target Ratio

ABSTRACTPVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. Electrical results versus thermal history for films of∼6–18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000°C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400μω-cm) is acceptable for use as a contact liner/barrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700°C.

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Laboratory planetary physics using intense heavy ion beams at the Facility for Antiprotons and Ion Research at Darmstadt: the HEDgeHOB collaboration

Astrophysics and Space Science ◽

10.1007/s10509-011-0598-9 ◽

2011 ◽

Vol 336 (1) ◽

pp. 61-65 ◽

Cited By ~ 2

Author(s):

N. A. Tahir ◽

T. Stöhlker ◽

A. Shutov ◽

I. V. Lomonosov ◽

V. E. Fortov ◽

...

Keyword(s):

Heavy Ion ◽

Ion Beams

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Interaction of Copper Film with Silicides

MRS Proceedings ◽

10.1557/proc-181-537 ◽

1990 ◽

Vol 181 ◽

Cited By ~ 4

Author(s):

Yow-Tzong Shy ◽

Shyam P. Murarka ◽

Carlton L. Shepard ◽

William A. Lanford

Keyword(s):

Sheet Resistance ◽

Diffusion Barrier ◽

Room Temperature ◽

Copper Film ◽

Furnace Annealing ◽

Rutherford Back Scattering ◽

Annealing Temperatures ◽

Back Scattering ◽

The Stability ◽

Stable Structures

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.

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