Compositional Effects on the Degradation of PVD-Tisin

1997 ◽  
Vol 473 ◽  
Author(s):  
W. F. McArthur ◽  
F. Deng ◽  
K. Ring ◽  
P. M. Pattison ◽  
K. L. Kavanagh

ABSTRACTPVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. Electrical results versus thermal history for films of∼6–18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000°C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400μω-cm) is acceptable for use as a contact liner/barrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700°C.

1997 ◽  
Vol 472 ◽  
Author(s):  
W.F. McArthur ◽  
F. Deng ◽  
K. Ring ◽  
P.M. Pattison ◽  
K.L. Kavanagh

ABSTRACTPVD-TixSiyNz films formed by reactive RF-magnetron co-sputtering of Ti and Si in Ar/N2 are evaluated as a diffusion barrier between Cu and Si. A complete range of compositions are obtained by Ti targets inlaid with Si. Film composition is controlled by the target ratio of titanium to silicon and N2 partial pressure. Electrical results versus thermal history for films of∼6–18% Si as well as the composition and microstructure as determined by Rutherford back scattering (RBS), TEM and electron diffraction are reported. These films are an amorphous matrix with imbedded nanocrystals of titanium nitride as-deposited and undergo phase separation to yield titanium nitride and silicon nitride after a 1000°C anneal. As-deposited compositions which lie above the TiN-Si3N4 phase line yield crystals of TiN. Compositions below the TiN-Si3N4 phase line yield crystals of Ti2N. Bulk resistivity as-deposited (<400μΩ2-cm) is acceptable for use as a contact liner/berrier material and improves with annealing. Si pn-diodes metallized with 20nm Ti40Si15N45 and Cu show no significant increase in reverse leakage current at anneal temperatures below 700°C.


2002 ◽  
Vol 737 ◽  
Author(s):  
D. Sarangi ◽  
A. Karimi

ABSTRACTCarbon nanotubes on metallic wires may be act as electrode for the field emission (FE) luminescent devices. Growing nanotubes on metallic wires with controlled density, length and alignment are challenging issues for this kind of devices. We, in the present investigation grow carbon nanotubes directly on the metal wires by a powerful but simple technique. A novel approach has been proposed to align nanotubes during growth. Methane, acetylene and dimethylamine have been used as source gases. With the same growth conditions (viz. pressure, growth temperature and plasma) methane does not produce any nanotube but nanotubes grown with dimethylamine show shorter length and radius than acetylene. The effect of temperature to control the radius, time to control the density, plasma conditions to align the nanotubes has been focused. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and Rutherford Back Scattering (RBS) are used to characterize the nanotubes.


1990 ◽  
Vol 181 ◽  
Author(s):  
Yow-Tzong Shy ◽  
Shyam P. Murarka ◽  
Carlton L. Shepard ◽  
William A. Lanford

ABSTRACTBilayers of Cu with TiSi2 and TaSi2 were tested by furnace annealing at temperatures from 200 to 500°C. Rutherford Back Scattering (RBS) technique was used to investigate the interaction between various films and determine the stability of Cu on silicide structures. The sheet resistance was also monitored. The results show that Cu on TiSi2 and TaSi2 structures are extremely stable structures at annealing temperatures in the range of room temperature to 500 °C. In such structures, therefore, there will not be a need of any diffusion barrier between Cu and the silicide films.


2020 ◽  
Vol 2 ◽  
pp. 229
Author(s):  
X. Aslanoglou ◽  
M. Pilakouta ◽  
P. Aloupogiannis ◽  
A. Travlos

N/A


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Masanao Kinoshita ◽  
Shimpei Yamaguchi ◽  
Nobuaki Matsumori

AbstractOrdered/disordered phase separation occurring in bio-membranes has piqued researchers’ interest because these ordered domains, called lipid rafts, regulate important biological functions. The structure of the ordered domain has been examined with artificial membranes, which undergo macroscopic ordered/disordered phase separation. However, owing to technical difficulties, the local structure inside ordered domains remains unknown. In this study, we employed electron diffraction to examine the packing structure of the lipid carbon chains in the ordered domain. First, we prepared dehydrated monolayer samples using a rapid-freezing and sublimation protocol, which attenuates the shrinkage of the chain-packing lattice in the dehydration process. Then, we optimised the electron flux to minimise beam damage to the monolayer sample. Finally, we developed low-flux scanning electron diffraction and assessed the chain packing structure inside the ordered domain formed in a distearoylphosphatidylcholine/dioleoylphosphatidylcholine binary monolayer. Consequently, we discovered that the ordered domain contains multiple subdomains with different crystallographic axes. Moreover, the size of the subdomain is larger in the domain centre than that near the phase boundary. To our knowledge, this is the first study to reveal the chain packing structures inside an ordered domain.


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