The Quality Properties in Herbal Tea Containing Astragalus membranaceus, Schizandra chinensis, Liriope platyphylla and Platycodon grandiflorum which are affected by the Processing Conditions

2014 ◽  
Vol 31 (3) ◽  
pp. 534-540 ◽  
Author(s):  
Sung-Cheon Oh ◽  
Keyword(s):  
Astragalus Membranaceus ◽  
Processing Conditions ◽  
Herbal Tea ◽  
Platycodon Grandiflorum ◽  
Quality Properties ◽  
Liriope Platyphylla ◽  
Schizandra Chinensis

scholarly journals Effect of Blanching Conditions and Thawing Methods on Quality Properties of Platycodon grandiflorum

2014 ◽  
Vol 20 (6) ◽  
pp. 211-222 ◽  
Author(s):  
Soo Young Choi ◽  
한혜민 ◽  
Seon Mi Yoo ◽  
최미정 ◽  
이상윤 ◽  
...  
Keyword(s):  
Platycodon Grandiflorum ◽  
Quality Properties

scholarly journals Effect of Blanching Conditions and Thawing Methods on Quality Properties of Platycodon grandiflorum

2014 ◽  
Vol 20 (6) ◽  
pp. 211-222 ◽  
Author(s):  
Soo Young Choi ◽  
한혜민 ◽  
Seon Mi Yoo ◽  
최미정 ◽  
이상윤 ◽  
...  
Keyword(s):  
Platycodon Grandiflorum ◽  
Quality Properties

Formation of defects in implanted hipox-structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1406-1407
Author(s):  
Peter Pegler ◽  
N. David Theodore ◽  
Ming Pan
Keyword(s):  
High Pressure ◽  
Cross Section ◽  
Semiconductor Devices ◽  
Silicon Substrates ◽  
Processing Conditions ◽  
Pressure Oxidation ◽  
Deep Trench ◽  
Local Oxidation ◽  
Trench Isolation ◽  
And Behavior

High-pressure oxidation of silicon (HIPOX) is one of various techniques used for electrical-isolation of semiconductor-devices on silicon substrates. Other techniques have included local-oxidation of silicon (LOCOS), poly-buffered LOCOS, deep-trench isolation and separation of silicon by implanted oxygen (SIMOX). Reliable use of HIPOX for device-isolation requires an understanding of the behavior of the materials and structures being used and their interactions under different processing conditions. The effect of HIPOX-related stresses in the structures is of interest because structuraldefects, if formed, could electrically degrade devices.This investigation was performed to study the origin and behavior of defects in recessed HIPOX (RHIPOX) structures. The structures were exposed to a boron implant. Samples consisted of (i) RHlPOX'ed strip exposed to a boron implant, (ii) recessed strip prior to HIPOX, but exposed to a boron implant, (iii) test-pad prior to HIPOX, (iv) HIPOX'ed region away from R-HIPOX edge. Cross-section TEM specimens were prepared in the <110> substrate-geometry.

Monitoring of distributed Schizandra chinensis (Turcz.) Baill in Korea

Planta Medica ◽  
2006 ◽  
Vol 72 (11) ◽  
Author(s):  
KH Jun ◽  
LA Yeong ◽  
LH Won ◽  
C Byungkil ◽  
C JinMi ◽  
...  
Keyword(s):  
Schizandra Chinensis
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