A new low dielectric constant barium titanate - poly (methyl methacrylate) nanocomposite films

2013 ◽  
Vol 2 (2) ◽  
pp. 99-109 ◽  
Author(s):  
Ravindra H. Upadhyay ◽  
Rajendra R. Deshmukh
Keyword(s):  
Dielectric Constant ◽  
Barium Titanate ◽  
Methyl Methacrylate ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Poly Methyl Methacrylate ◽  
Low Dielectric

scholarly journals Preparing the Degradable, Flame-Retardant and Low Dielectric Constant Nanocomposites for Flexible and Miniaturized Electronics with Poly(lactic acid), Nano ZIF-8@GO and Resorcinol Di(phenyl phosphate)

Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1756 ◽  
Author(s):  
Mi Zhang ◽  
Yu Gao ◽  
Yixing Zhan ◽  
Xiaoqing Ding ◽  
Ming Wang ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Lactic Acid ◽  
Flame Retardant ◽  
Oxygen Index ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Poly Lactic Acid ◽  
Phenyl Phosphate ◽  
Low Dielectric ◽  
Limited Oxygen

Degradable, flame retardant, and flexible nanocomposite films with low dielectric constant were prepared with poly (lactic acid) (PLA), nano ZIF-8@GO, and degradable flame-retardant resorcinol di(phenyl phosphate) (RDP). The SEM results of the fractured surfaces indicated that ZIF-8@GO and RDP were dispersed uniformly in the PLA matrix. The prepared films had good mechanical properties and the tensile strength of the film with 1.5 wt% of ZIF-8@GO was increased to 48.2 MPa, compared with 38.5 MPa of pure PLA. Meanwhile, the nanocomposite films were flexible due to the toughing effect of RDP. Moreover, above 27.0% of limited oxygen index (LOI) and a VTM-0 rating were achieved for the nanocomposite films. The effects of nano ZIF-8@GO hybrids and RDP on the dielectric properties were investigated, and the results showed that ZIF-8@GO and RDP were beneficial in reducing the dielectric constant and dielectric loss of the nanocomposites.

Fabrication of barium titanate/acrylonitrile-butadiene styrene/poly(methyl methacrylate) nanocomposite films for hybrid ferroelectric capacitors

RSC Advances ◽  
2015 ◽  
Vol 5 (93) ◽  
pp. 76356-76362 ◽  
Author(s):  
Saman Salemizadeh Parizi ◽  
Gavin Conley ◽  
Tommaso Costanzo ◽  
Bob Howell ◽  
Axel Mellinger ◽  
...  
Keyword(s):  
Barium Titanate ◽  
Methyl Methacrylate ◽  
Polymer Blends ◽  
Acrylonitrile Butadiene Styrene ◽  
Nanocomposite Films ◽  
Poly Methyl Methacrylate ◽  
Ferroelectric Capacitors ◽  
Polar Polymer ◽  
Butadiene Styrene

A new organic–inorganic ferroelectric hybrid capacitor designed by uniformly incorporating monodisperse 15 nm ferroelectric BaTiO3 nanocubes into non-polar polymer blends of poly(methyl methacrylate) (PMMA) and acrylonitrile-butadiene-styrene (ABS) terpolymer is described.

Highly transparent, strong, and flexible fluorographene/fluorinated polyimide nanocomposite films with low dielectric constant

2018 ◽  
Vol 6 (24) ◽  
pp. 6378-6384 ◽  
Author(s):  
Xiaodong Yin ◽  
Yiyu Feng ◽  
Qiang Zhao ◽  
Yu Li ◽  
Shuangwen Li ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Constants ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Polyimide Films ◽  
Low Dielectric ◽  
Fluorinated Polyimide ◽  
Polyimide Nanocomposite

Transparent and flexible fluorinated polyimide films with loading of well-dispersed fluorographene exhibit low dielectric constants.

Enhancement of the dielectric response in polymer nanocomposites with low dielectric constant fillers

Nanoscale ◽  
2017 ◽  
Vol 9 (31) ◽  
pp. 10992-10997 ◽  
Author(s):  
Yash Thakur ◽  
Tian Zhang ◽  
C. Iacob ◽  
Tiannan Yang ◽  
J. Bernholc ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Polymer Nanocomposites ◽  
Volume Content ◽  
Dielectric Response ◽  
Nanocomposite Films ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Low Volume

An enhanced dielectric response in nanocomposite films with low dielectric constant nanofillers at a very low volume content is achieved.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Sign in / Sign up

Export Citation Format

Share Document