Investigation of the Thermal Simulation Model of Power Semiconductor Device Using Design of Experiments

2003 ◽  
Vol 2003.6 (0) ◽  
pp. 255-256
Author(s):  
Katsuhiro KOIZUMI ◽  
Akito JOBOJI ◽  
Kuniaki NAGAHARA ◽  
Masaru ISHIZUKA
Keyword(s):  
Design Of Experiments ◽  
Simulation Model ◽  
Semiconductor Device ◽  
Thermal Simulation ◽  
Power Semiconductor Device ◽  
Power Semiconductor

Clustered insulated gate bipolar transistor: a new power semiconductor device

2001 ◽  
Vol 148 (2) ◽  
pp. 75 ◽  
Author(s):  
M. Sweet ◽  
O. Spulber ◽  
J.V. Subhas Chandra Bose ◽  
L. Ngwendson ◽  
K.V. Vershinin ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Bipolar Transistor ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Insulated Gate Bipolar Transistor
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