Characterization of RF-MEMS switch using PZT thin films

2004 ◽  
Vol 2004.7 (0) ◽  
pp. 359-360
Author(s):  
Hironobu ENDO ◽  
Takaaki SUZUKI ◽  
Isaku KANNO ◽  
Hidetoshi KOTERA
2005 ◽  
Vol 2005.80 (0) ◽  
pp. _9-35_-_9-36_
Author(s):  
Hironobu ENDO ◽  
Yoshiro TAZAWA ◽  
Takaaki SUZUKI ◽  
Isaku KANNO ◽  
Hidetoshi KOTERA

2020 ◽  
Vol 27 ◽  
pp. 443-445 ◽  
Author(s):  
Ajay Sudhir Bale ◽  
Suhaas V. Reddy ◽  
Shivashankar A. Huddar

Author(s):  
Ryszard J. Pryputniewicz ◽  
Cosme Furlong ◽  
Emily J. Pryputniewicz

Functional operation of RF MEMS resistive switches depends on dynamic characteristics of the cantilever contacts. Characteristics of these contacts, in turn, depend on parameters defining their shape and dimensions, material properties, boundary conditions, and actuation voltages. In this paper, a simple analytical model is presented and used to develop an understanding of the switch behavior. In addition, uncertainties corresponding to this model are also determined to quantitatively show the influence that various parameters defining the cantilever contact have on its dynamics which, in turn, influences performance of the RF MEMS switch. This performance can be optimized with the objective of achieving resonance frequency within, e.g., 1% of the desired value while constraining the nominal dimensions and finding the optimum set of uncertainties in these dimensions. Analytical results correlate well with the preliminary experimental characterization of the contacts.


2015 ◽  
Vol 27 (2) ◽  
pp. 24138
Author(s):  
李君儒 Li Junru ◽  
高杨 Gao Yang ◽  
何婉婧 He Wanjing ◽  
蔡洵 Cai Xun

Author(s):  
Isaku Kanno ◽  
Takaaki Suzuki ◽  
Hironobo Endo ◽  
Hidetoshi Kotera

This paper presents the possibility of piezoelectric RF-MEMS switches for low voltage operation. The switches we fabricated consist of micro-cantilevers using PZT thin films with the length of 490 μm and the width of 87 μm. The cantilevers are actuated as unimorph actuators that can be deflected by applying voltage between upper and lower electrodes. We could obtain large tip deflection of 3 μm even at the low voltage of 5.0V, which is well compatible with conventional IC drivers. This result indicates that the RF-MEMS switches using piezoelectric PZT thin films is advantageous to the low voltage switching devices in RF components compared with conventionally proposed electrostatic ones.


2010 ◽  
Vol 116 (1) ◽  
pp. 35-40
Author(s):  
Radhapiyari Laishram ◽  
O. P. Thakur ◽  
D. K. Bhattacharya ◽  
Harsh ◽  
Anshu Goyal ◽  
...  

Author(s):  
D. Vasilache ◽  
A. Avram ◽  
A. Stefanescu ◽  
G. Boldeiu ◽  
S Iordanescu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document