scholarly journals Electrical and Photoluminescence Properties of Mo-doped ZnO Films Deposited by Spray Pyrolysis

2018 ◽  
Vol 15 (3) ◽  
pp. 218-223 ◽  
Author(s):  
T. Sreenivasulu Reddy ◽  
G. Phaneendra Reddy ◽  
K.T. Ramakrishna Reddy
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Zno Films ◽  
Vibrational Modes ◽  
Photoluminescence Properties ◽  
Glass Substrates ◽  
Doped Zno ◽  
Electrical Analysis ◽  
Substrate Temperatures

Spray deposited Mo-doped zinc oxide (MZO) films were grown on glass substrates at different substrate temperatures (Ts)that varied in the range of 300°C-450 °C at aconstant Mo-doping concentration of 2 at. %.XRD spectra revealed better crystallinity of films prepared atTs400 °C. FTIR spectra showed the vibrational modes related toZn–O bonding.Photoluminescence spectra of MZO films showed a peakrelated toviolet emissionsbetween 400 nm and 420 nm. Electrical analysis showed n type semiconducting nature of the films and the films grown at Ts= 400 °C hadlow resistivity and high mobility.Adetailed analysis on theeffect of substrate temperatureon photoluminescence and electrical propertiesof MZO films wasdiscussed and reported.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

Preparation and characterization of nanostructures of in-doped ZnO films deposited by chemically spray pyrolysis: Effect of substrate temperatures

2013 ◽  
Vol 63 ◽  
pp. 228-239 ◽  
Author(s):  
M. Benhaliliba ◽  
C.E. Benouis ◽  
Z. Mouffak ◽  
Y.S. Ocak ◽  
A. Tiburcio-Silver ◽  
...  
Keyword(s):  
Spray Pyrolysis ◽  
Zno Films ◽  
Doped Zno ◽  
Substrate Temperatures

Effect of Substrate Temperature on the Properties of Al-Doped ZnO Films by RF Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Higher Temperature ◽  
Doped Zno ◽  
Substrate Temperatures

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.

Optical Properties of Zinc Oxide (ZnO) Thin Films Prepared by Spray Pyrolysis Method

2014 ◽  
Vol 895 ◽  
pp. 226-230 ◽  
Author(s):  
B.V. Rajendra ◽  
Vinayak Bhat ◽  
Dhananjaya Kekuda
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Spray Pyrolysis Method ◽  
Glass Substrates ◽  
Pyrolysis Method ◽  
Substrate Temperatures

Zinc oxide (ZnO) thin films were deposited on the glass substrates using Zinc acetate dehydrate solution through spray pyrolysis method. The films were obtained by spraying 0.05M concentrated solution at a rate of 0.5ml for 10 min and were deposited at different substrate temperatures ranging from 473K to 673K. A comprehensive study was carried out to realize the effect of substrate temperatures and subsequent annealing on optical properties of the ZnO thin films. It was observed that the band gap energy decreases with increases the substrate temperature and annealing. Optical constants such as the refractive indexnand extinction coefficientkwere determined from transmittance spectrum in the ultravioletvisible (UVVIS) regions by Swanepoel envelope method and crystallinity was confirmed by Urbach tail and atomic force microscope images.

scholarly journals Structural and Optical Characterization of Magnesium Doped Zinc Oxide Thin Films Deposited by Spray Pyrolysis

2016 ◽  
Vol 64 (1) ◽  
pp. 1-6
Author(s):  
Mitali Biswas ◽  
Mehnaz Sharmin ◽  
Chitra Das ◽  
Jibon Poddar ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Doped Zno ◽  
Mg Doped

Pure and magnesium (Mg) doped zinc oxide (ZnO) thin films were prepared onto clean glass substrate by spray pyrolysis (SP) technique at the substrate temperature of 300°C. Various optical parameters such as absorption co-efficient, band gap energy, refractive index, extinction coefficient of the thin films were studied using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300-2500 nm. Optical band gap increased from 3.24 to 3.46 eV with the increase of Mg concentration from 0 to 40%. Transmittance and refractive index of the Mg doped ZnO thin films decreased due to the increase of Mg concentration. The EDX spectra confirmed the increase of Mg and consequent reduction in Zn content in the Mg doped ZnO thin films. Pure and Mg- doped ZnO films were annealed at 425°C for 1 hour. X-ray diffraction (XRD) study of the annealed films showed hexagonal type of polycry-stalline structure with the preferred orientation along (101) plane with some other peaks (100), (002), (102), (110), (103) and (112). From the XRD patterns it was found that grain size decreased from 63.45 to 36.56 nm, lattice constant _ and c remained almost constant with Mg doping concentration.Dhaka Univ. J. Sci. 64(1): 1-6, 2016 (January)

Change in polarity of zinc oxide films grown on sapphire substrates without insertion of any buffer layer

2008 ◽  
Vol 23 (12) ◽  
pp. 3269-3272 ◽  
Author(s):  
Yutaka Adachi ◽  
Naoki Ohashi ◽  
Tsuyoshi Ohnishi ◽  
Takeshi Ohgaki ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Zno Films ◽  
Ion Scattering ◽  
Ceramic Target ◽  
Interfacial Phase ◽  
Sapphire Substrates ◽  
Zinc Oxide Films ◽  
Ion Scattering Spectroscopy ◽  
Doped Zno ◽  
Polarity Change

We have investigated the polarity of zinc oxide (ZnO) and Al-doped ZnO films grown on (11¯20) and (0001) sapphire substrates, using coaxial impact collision ion scattering spectroscopy. The films grown by pulsed laser deposition with a nominally undoped ZnO ceramic target had a (000¯1) surface, whereas the films prepared with a 1 mol% Al-doped ZnO ceramic target had a (0001) surface. The usage of Al-doped and undoped targets caused no difference in the in-plane lattice orientation. Electron microscope observations revealed that polarity change due to doping occurred without the formation of any interfacial phase between ZnO and sapphire.

Morphological, Structural, Electrical and Optical Properties of Copper-Doped Zinc Oxide Films Deposited by Spray Pyrolysis

2018 ◽  
Vol 930 ◽  
pp. 79-84
Author(s):  
Juliana Simões Chagas Licurgo ◽  
Herval Ramos Paes Junior
Keyword(s):  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Xrd Analysis ◽  
Band Gap Energy ◽  
Hexagonal Structure ◽  
Material Behavior ◽  
Glass Substrates ◽  
Zinc Oxide Films

In this work, copper-doped zinc oxide films (ZnO:Cu) were deposited by spray pyrolysis on glass substrates. The influence of doping concentration (0-10 at.%) on morphological, structural, optical and electrical properties of the ZnO:Cu films was investigated. Electrical characterization consisted in measuring the variation of electrical conductivity with temperature; they presented a typical semiconductor material behavior. Based on x-ray diffraction (XRD) analysis, it was able to confirm that the films are polycrystalline having a wurtzite hexagonal structure, preferentially oriented in the c-axis (002), and the crystallite size ranged from 41.60 to 50.70 nm. The optical characterization revealed that ZnO:Cu films present band gap energy between 3.18 and 3.27 eV. The films were homogeneous with good adhesion to the substrate. The results indicate the viability of using them in optoelectronic devices.

scholarly journals Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Texture Coefficient ◽  
Hexagonal Structure ◽  
Structural And Optical Properties ◽  
Lattice Constants ◽  
Glass Substrates

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .

scholarly journals Characterization and thermoluminescence study of gamma irradiated Tb-doped ZnO and undoped ZnO synthesized by spray pyrolysis method

Nova Scientia ◽  
2021 ◽  
Vol 13 (27) ◽  
Author(s):  
Alejandro Ortiz-Morales ◽  
Manuel García-Hipólito ◽  
Epifanio Cruz-Zaragoza ◽  
Ramón Gómez-Aguilar
Keyword(s):  
Zinc Oxide ◽  
Gamma Radiation ◽  
Spray Pyrolysis ◽  
Oxide Films ◽  
Spray Pyrolysis Method ◽  
Order Kinetic ◽  
Zinc Oxide Films ◽  
Pyrolysis Method ◽  
Wide Range ◽  
Doped Zno

High gamma dose-resistant undoped ZnO and Tb-doped ZnO thermoluminescent (TL) micro-phosphors were prepared by the spray pyrolysis method. Scanning electron microscopy shows crystalline rods with hexagonal morphology, (0.1-0.4 µm diameter, and about 1 µm length). Raman spectra dispersion reveals a würtzite form. Photoluminescence (PL) study of irradiated zinc oxide films indicates the generation of defects produced by gamma irradiation resulting in an increased probability of electron-hole exciton recombination. PL spectrum shows emission bands from 5D4-7Fj=6,5,4,3 transitions ascribed to Tb3+ dopant in zinc oxide phosphor. X-ray diffraction patterns for both types of films growth (undoped ZnO and Tb-doped ZnO) are typical of zinc oxide crystalline structure, with no noticeable effect of Tb ions. Dosimetric properties, for both samples, show a low TL fading signal and TL reproducibility signal for undoped ZnO and Tb-doped ZnO samples was 29 and 57 %, respectively. The kinetic parameters such as activation energy E, frequency factor s, and Rm values, were obtained by Computerized Glow Curve Deconvolution (CGCD) assuming Mixed Order Kinetic model (MOK). The results show that the MOK well described the glow curves of zinc oxide films. The heating rate effects produced a broadening of glow peak located at 420 K. For purposes like radiation detector, atomic effective number (Zeff) was obtained: 27.74 and 56.47 for undoped ZnO and Tb-doped ZnO samples, respectively. The samples were exposed to gamma radiation in a wide range of 0.25–20 kGy dose. TL properties of undoped ZnO and Tb-doped ZnO samples show that these materials could be used to detect high doses in a gamma radiation field.

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