scholarly journals Structural and Optical Characterization of Magnesium Doped Zinc Oxide Thin Films Deposited by Spray Pyrolysis

2016 ◽  
Vol 64 (1) ◽  
pp. 1-6
Author(s):  
Mitali Biswas ◽  
Mehnaz Sharmin ◽  
Chitra Das ◽  
Jibon Poddar ◽  
Shamima Choudhury
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Refractive Index ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Doped Zno ◽  
Mg Doped

Pure and magnesium (Mg) doped zinc oxide (ZnO) thin films were prepared onto clean glass substrate by spray pyrolysis (SP) technique at the substrate temperature of 300°C. Various optical parameters such as absorption co-efficient, band gap energy, refractive index, extinction coefficient of the thin films were studied using UV-VIS-NIR spectrophotometer in the photon wavelength range of 300-2500 nm. Optical band gap increased from 3.24 to 3.46 eV with the increase of Mg concentration from 0 to 40%. Transmittance and refractive index of the Mg doped ZnO thin films decreased due to the increase of Mg concentration. The EDX spectra confirmed the increase of Mg and consequent reduction in Zn content in the Mg doped ZnO thin films. Pure and Mg- doped ZnO films were annealed at 425°C for 1 hour. X-ray diffraction (XRD) study of the annealed films showed hexagonal type of polycry-stalline structure with the preferred orientation along (101) plane with some other peaks (100), (002), (102), (110), (103) and (112). From the XRD patterns it was found that grain size decreased from 63.45 to 36.56 nm, lattice constant _ and c remained almost constant with Mg doping concentration.Dhaka Univ. J. Sci. 64(1): 1-6, 2016 (January)

scholarly journals Structural, Optoelectrical, Linear, and Nonlinear Optical Characterizations of Dip-Synthesized Undoped ZnO and Group III Elements (B, Al, Ga, and In)-Doped ZnO Thin Films

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 252 ◽  
Author(s):  
A. M. Alsaad ◽  
A. A. Ahmad ◽  
I. A. Qattan ◽  
Qais M. Al-Bataineh ◽  
Zaid Albataineh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Zno Thin Films ◽  
Zno Films ◽  
Optical Parameters ◽  
Group Iii ◽  
Doped Zno

Undoped ZnO and group III (B, Al, Ga, and In)-doped ZnO thin films at 3% doping concentration level are dip-coated on glass substrates using a sol-gel technique. The optical properties of the as-prepared thin films are investigated using UV–Vis spectrophotometer measurements. Transmittance of all investigated thin films is found to attain high values of ≥80% in the visible region. We found that the index of refraction of undoped ZnO films exhibits values ranging between 1.6 and 2.2 and approximately match that of bulk ZnO. Furthermore, we measure and interpret nonlinear optical parameters and the electrical and optical conductivities of the investigated thin films to obtain a deeper insight from fundamental and practical points of view. In addition, the structural properties of all studied thin film samples are investigated using the XRD technique. In particular, undoped ZnO thin film is found to exhibit a hexagonal structure. Due to the large difference in size of boron and indium compared with that of zinc, doping ZnO thin films with these two elements is expected to cause a phase transition. However, Al-doped ZnO and Ga-doped ZnO thin films preserve the hexagonal phase. Moreover, as boron and indium are introduced in ZnO thin films, the grain size increases. On the other hand, grain size is found to decrease upon doping ZnO with aluminum and gallium. The drastic enhancement of optical properties of annealed dip-synthesized undoped ZnO thin films upon doping with group III metals paves the way to tune these properties in a skillful manner, in order to be used as key candidate materials in the fabrication of modern optoelectronic devices.

scholarly journals Influence of thickness on the optical properties of Sb doped ZnO thin films

2014 ◽  
Vol 38 (1) ◽  
pp. 93-96
Author(s):  
E Hoq ◽  
MRA Bhuiyan ◽  
J Begum
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Zno Thin Films ◽  
Zno Films ◽  
Thermal Evaporation Method ◽  
Doped Zno ◽  
High Absorption Coefficient ◽  
Academy Of Sciences ◽  
High Absorption

Sb doped ZnO thin films having various thicknesses have been prepared onto glass substrate by using thermal evaporation method. The atomic compositions of the grown films have been determined by Energy Dispersive Analysis of X-ray (EDAX) method. The optical properties were measured by using a UV-VIS-NIR spectrophotometer (300 to 2500 nm). The EDAX analysis revealed that Sb is doped into the ZnO films. Optical properties showed high absorption coefficient (~105/cm) that direct allowed transition band gap. The optical band gap of the ZnO thin films became reduced due to the doping of Sb. DOI: http://dx.doi.org/10.3329/jbas.v38i1.20217 Journal of Bangladesh Academy of Sciences, Vol. 38, No. 1, 93-96, 2014

Silver Doped Zinc Oxide Thin Film Production by Thermionic Vacuum Arc (TVA) Technique

2021 ◽  
Vol 43 (3) ◽  
pp. 253-253
Author(s):  
Mehmet zkan Mehmet zkan ◽  
Sercen Sadik Erdem Sercen Sadik Erdem
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Band Gap ◽  
Glass Substrate ◽  
Zno Thin Films ◽  
Vacuum Arc ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Thermionic Vacuum Arc

In this paper, silver (Ag)doped Zinc Oxide(ZnO) thin films were prepared on glass and silicon substrate by using a thermionic vacuum arc technique. The surface, structural, optical characteristics of silver doped thin films have been examined by X-Ray diffractometer (XRD), field emission scanning emission electron microscopy (FESEM), atomic force microscopy (AFM), and UV-Visible spectrophotometer. As a result of these measurements, Ag, Zn and ZnO reflection planes were determined for thin films formed on Si and glass substrate. Nano crystallites have emerged in FESEM and AFM images. The produced films have low transparency. The optical band gap values were measured by photoluminescence devices at room temperature for thin films produced on silicon and glass substrate. The band gap values are very close to 3.10 eV for Ag doped ZnO thin films. The band gap of un-doped ZnO thin film is approximately 3.3 eV. It was identified that Ag doped changes the properties of the ZnO thin film.

Optical properties of Al-doped ZnO thin films obtained by the method of high-frequency magnetron sputtering

2021 ◽  
pp. 2150189
Author(s):  
A. Kashuba ◽  
H. Ilchuk ◽  
R. Petrus ◽  
I. Semkiv ◽  
O. Bovgyra ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
High Frequency ◽  
Optical Constants ◽  
Zno Thin Films ◽  
Optical Parameters ◽  
Single Oscillator ◽  
Doped Zno

The optical constants and thickness of Al-doped ZnO (ZnO:Al(2.5 wt.%)) thin films prepared by high-frequency magnetron sputtering method are determined. ZnO:Al thin films are crystallized in the hexagonal structure from XRD studies. The optical constants and the bandgap of the films under study have been determined. Optical properties (refractive index [Formula: see text], absorption coefficient [Formula: see text], extinction coefficient [Formula: see text], dielectric functions [Formula: see text] and optical conductivity [Formula: see text]) of thin films and thickness [Formula: see text] can be determined from the transmission spectrum. The dispersion of the refractive index was explained using a single oscillator model. Single oscillator energy and dispersion energy are obtained from fitting. Optical parameters of the films were determined using the Cauchy, Sellmeier and Wemple models. The increasing value of dispersion parameter for polycrystalline thin films than for single crystals is observed. The fundamental absorption edge position (3.26 eV) in the transmittance spectrum of studied thin films corresponds to the values that are typical for ZnO:Al compound. No significant increase of the bandgap width was revealed by comparing ZnO:Al thin films with the known results of the optical studies of ZnO thin films. Possible reasons of such behavior were analyzed and the influence of bandgap increase on spectral behavior of optical functions are investigated. The material optical parameters such as normalized integrated transmission, zero and high-frequency dielectric constant, density of state effective mass ratio were also calculated.

Single Crystalline a-Axis Mg Doped ZnO Thin Films Prepared by Sol-Gel Technique for Optoelectronics Applications

2010 ◽  
Vol 638-642 ◽  
pp. 2915-2920
Author(s):  
Bajirao K. Sonawane ◽  
Mukesh P. Bhole ◽  
Dnyaneshwar S. Patil
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Optical Wave ◽  
Single Crystalline ◽  
X Ray ◽  
Doped Zno ◽  
Deposited Films ◽  
Mg Doped

Single crystalline a-axis Mg doped ZnO thin films (MgxZn1-xO) were successfully prepared by sol-gel spin coating method using Zinc acetate, Magnesium acetate as precursors with ethanol as a solvent. The prepared solutions were used to deposit the films on silicon (100) substrate for different mole concentrations (x = 0.1 to 0.33). All deposited films were annealed at 450 0C to get dense crystalline films. X-ray Diffractometer (XRD), Scanning Electron Microscopy (SEM) and Energy Dispersive Analysis by X-ray (EDAX), Fourier Transform Infrared Spectroscopy (FTIR), Ellipsometry and semiconductor characterization system with probe station were used to characterize the deposited films for structural, chemical, optical, mechanical and electrical properties. The intense absorption peak was observed in the IR spectra for all deposited films showing bond position of fundamental ZnO peak for all Mg mole concentrations. From the XRD spectra, it revealed that the deposited films were single crystalline and a-axis oriented. EDAX spectra clearly showed the peak of Mg along with Zn and O indicating the successful incorporation of Mg into the ZnO. The refractive index was successfully tailored from 1.6 to 1.11 corresponding to 0.1 to 0.33 Mg mole concentration. The refractive index was found to be decrease with an increase in Mg mole concentration. I-V characteristics shows decrease in current with increase in the Mg mole concentration. Significant effect was not observed on thickness of deposited films due to the varying Mg mole fraction. Through SEM image, it was noted that the uniform film of Mg doped ZnO was deposited on the silicon substrate. Our results explore the applicability of MgZnO as cladding layer material to form effective and efficient heterostructure with ZnO as an active layer for the optical wave-guide applications.

scholarly journals Effect of the Substrate Movement on the Optical Properties of ZnO Thin Films Deposited by Ultrasonic Spray Pyrolysis

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Ebru Gungor ◽  
Tayyar Gungor
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Quartz Substrate ◽  
Compressive Strain ◽  
Ultrasonic Spray Pyrolysis ◽  
Film Deposition ◽  
Zno Thin Films ◽  
Zno Films ◽  
Ultrasonic Spray

Using a modified ultrasonic spray pyrolysis (USP) system, ZnO thin films were deposited on the substrate moved back and forth (ZO1) and rotated (ZO3) as well as fixed (ZO2) in the conventional USP technique. Prepared thin films are pure ZnO with a preferred crystalline orientation of (0 0 2) in the hexagonal wurtzite structure. Diffraction angle shift implies a decrease lattice parameter alongc-axis anda-axis 0.2% and 0.3%, respectively. Maximum strain has been found for ZO1 which is about (−) 0.17%. These strain values show that presence of compressive strain due to moving substrates as depositing ZnO films. The film deposition process on the rotated quartz substrate is provided to obtain the thinner film. The grain size and root-mean- square value of roughness increase with thickness. Strong UV emission was observed at ∼390 nm assigned to the band gap transition from photoluminescence measurements. Energy shifted about 39 meV for ZO3 sample with respect to that of ZO2 film deposited in conventional USP system. This behaviour is confirmed with (002) diffraction peak shifting. So, the compressed lattice will provide a wider band gap for these films.E2phonon frequency values have not given a considerable shifting.

Aluminum-Doped Zinc Oxide as Transparent Electrode Materials

2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Electrode Materials ◽  
Sol Gel ◽  
Argon Plasma ◽  
Transparent Electrode ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.

Optical Characterization of Al-doped ZnO Films via Sol-gel Method Using Spectroscopic Ellipsometry

2020 ◽  
Vol 10 (5) ◽  
pp. 642-648
Author(s):  
Ehsan M. Aghkonbad ◽  
Hassan Sedghi ◽  
Maryam M. Aghgonbad
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spectroscopic Ellipsometry ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Zno Thin Films ◽  
Zno Films ◽  
Promising Alternative ◽  
Gap Energy ◽  
Doped Zno

Background: Al-doped ZnO thin films are considered as a promising alternative to ITO in optoelectronic applications. In this work, Al-doped ZnO thin films were prepared using sol-gel spin coating technique. Experimental: The optical properties of the films such as refractive index, extinction coefficient, dielectric function and the absorption coefficient were examined using spectroscopic ellipsometry method in the wavelength range of 300 to 900 nm. The effect of Al doping on ZnO thin films with different Al concentrations was significant. Tauc relation was used to estimate the optical band gap energy of the films. Results: The calculated values of band gap energy were obtained between 3.10 to 3.25 eV. Also the fraction of voids was calculated using Aspnes theory. Conclusion: The free carrier concentration value was obtained in the order of 1019 cm-3.

scholarly journals Physical and photocatalytic properties of sprayed Dy doped ZnO thin films under sunlight irradiation for degrading methylene blue

RSC Advances ◽  
2021 ◽  
Vol 11 (40) ◽  
pp. 24917-24925
Author(s):  
G. El Fidha ◽  
N. Bitri ◽  
F. Chaabouni ◽  
S. Acosta ◽  
F. Güell ◽  
...  
Keyword(s):  
Thin Films ◽  
Methylene Blue ◽  
Zinc Oxide ◽  
Photocatalytic Activity ◽  
Spray Pyrolysis ◽  
Photocatalytic Properties ◽  
Zno Thin Films ◽  
Sunlight Irradiation ◽  
Doped Zno

Dysprosium-doped zinc oxide (ZnO) thin films prepared through spray pyrolysis show outstanding photocatalytic activity for the degradation of methylene blue.

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