Qualitative and Quantitative Analysis of Steatite using Calibration-free Laser-inducedBreakdown Spectroscopy in Conjunction with X-ray Fluorescence Spectroscopy andFourier-transform Infrared Spectroscopy

2021 ◽  
Author(s):  
Muhammad Fahad ◽  
Asim Shahzad ◽  
Sajad Ali ◽  
Khizar Shah
Keyword(s):  
Infrared Spectroscopy ◽  
Quantitative Analysis ◽  
Fluorescence Spectroscopy ◽  
Qualitative And Quantitative Analysis ◽  
X Ray ◽  
Qualitative And Quantitative ◽  
Calibration Free

X-Ray Fluorescence in Cotton Modification Research

1964 ◽  
Vol 8 ◽  
pp. 456-461
Author(s):  
Donald Mitcham ◽  
Biagio Piccolo ◽  
Verne W. Tripp ◽  
Robert T. O’Connor
Keyword(s):  
Quantitative Analysis ◽  
Cotton Textile ◽  
Qualitative And Quantitative Analysis ◽  
X Ray ◽  
Textile Materials ◽  
Qualitative And Quantitative ◽  
Chemically Modified ◽  
Elapsed Time

AbstractThe application of X-ray fluorescence to the qualitative and quantitative analysis of chemically modified cotton textile materials is described. The scope and flexibility of the technique have permitted the determination of more than 20 elements with, greatly reduced elapsed time compared with the corresponding spectroscopic or wet methods. Precautions to be observed in preparing standards are discussed. Results of the analysis of typical modifications and their significance in the development of cottons for specific uses are described.

Qualitative and Quantitative Analysis of Stacking Disorder in α-and β-SiC by X-ray Diffraction and Structure Modeling

1995 ◽  
Vol 410 ◽  
Author(s):  
Bogdan Palosz ◽  
Svetlana Stel'makh ◽  
Stanislaw Gierlotka
Keyword(s):  
Quantitative Analysis ◽  
Model Parameters ◽  
Qualitative And Quantitative Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Qualitative And Quantitative ◽  
Poisson Function ◽  
Diffraction Patterns ◽  
Computer Generation ◽  
Stacking Disorder

ABSTRACTA method of analysis of disordering in α- and β-SiC polycrystals by numerical modeling, and a simulation of X-ray diffraction profiles are presented. The diffraction patterns of nonperiodic structures were simulated for models of 2000 layer fragments of the structure. Computer generation of the models was based on the Poisson function describing the size distribution of the domains of basic polytypes and faults. The models were quantified by a set of input probability parameters describing relative frequencies of the occurrence of the domains of polytypes and faults. Implementation of a correlation parameter that characterizes coherence of sequential domains of a given polytype assures a good reproducibility of the simulated diffraction profiles obtained for the same set of the model parameters. Based on this method, a quantitative analysis of disordering in polycrystals of SiC annealed in the temperature range 1100–2200 °C was performed.

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