Room-temperature deposition of amorphous titanium dioxide thin film with high refractive index by a filtered cathodic vacuum arc technique

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.

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Room temperature deposition of highly dense TiO2thin films by filtered cathodic vacuum arc

10.1117/12.2189503 ◽

2015 ◽

Author(s):

E. Guillén ◽

I. Heras ◽

G. Rincón Llorente ◽

F. Lungwitz ◽

M. Alcon-Camas ◽

...

Keyword(s):

Room Temperature ◽

Vacuum Arc ◽

Temperature Deposition ◽

Filtered Cathodic Vacuum Arc

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Low Temperature Deposition of Zinc Oxide Films

MRS Proceedings ◽

10.1557/proc-763-b5.16 ◽

2003 ◽

Vol 763 ◽

Author(s):

H. W. Lee ◽

Y. G. Wang ◽

S. P. Lau ◽

B. K. Tay

Keyword(s):

Zinc Oxide ◽

Carrier Concentration ◽

Vacuum Arc ◽

Zno Films ◽

Al Alloy ◽

Pure Zinc ◽

Zinc Oxide Films ◽

Alloy Target ◽

Temperature Deposition ◽

Filtered Cathodic Vacuum Arc

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.

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Room temperature deposition of highly conductive and transparent hydrogen and tungsten co-doped ZnO films for thin film solar cells applications

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2012.12.008 ◽

2013 ◽

Vol 110 ◽

pp. 94-97 ◽

Cited By ~ 14

Author(s):

Yanfeng Wang ◽

Xiaodan Zhang ◽

Qian Huang ◽

Changchun Wei ◽

Ying Zhao

Keyword(s):

Thin Film ◽

Solar Cells ◽

Room Temperature ◽

Thin Film Solar Cells ◽

Zno Films ◽

Temperature Deposition ◽

Doped Zno ◽

Co Doped ◽

And Tungsten

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Surface refractive index sensor based on titanium dioxide composite thin film for detection of cadmium ions

Measurement ◽

10.1016/j.measurement.2021.110287 ◽

2021 ◽

pp. 110287

Author(s):

Nur Alia Sheh Omar ◽

Ramli Irmawati ◽

Yap Wing Fen ◽

Ernee Noryana Muhamad ◽

Faten Bashar Kamal Eddin ◽

...

Keyword(s):

Thin Film ◽

Refractive Index ◽

Titanium Dioxide ◽

Composite Thin Film ◽

Refractive Index Sensor ◽

Cadmium Ions

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Filtered cathodic vacuum arc deposition of thin film copper

Thin Solid Films ◽

10.1016/s0040-6090(01)01315-3 ◽

2001 ◽

Vol 398-399 ◽

pp. 539-543 ◽

Cited By ~ 9

Author(s):

S.P Lau ◽

Y.H Cheng ◽

J.R Shi ◽

P Cao ◽

B.K Tay ◽

...

Keyword(s):

Thin Film ◽

Vacuum Arc ◽

Vacuum Arc Deposition ◽

Filtered Cathodic Vacuum Arc ◽

Arc Deposition

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A New Buffering Layer of Photovoltaic Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.482-484.394 ◽

2012 ◽

Vol 482-484 ◽

pp. 394-397

Author(s):

Ming Wei Li ◽

Nan Hai Sun ◽

Yun Wang Ge ◽

Bo Lei Yao

Keyword(s):

Thin Film ◽

Solar Cells ◽

Organic Solar Cells ◽

Room Temperature ◽

Acid Methyl Ester ◽

Good Alternative ◽

Oxide Thin Film ◽

Nio Thin Film ◽

Temperature Deposition ◽

Photovoltaic Solar Cells

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.

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