A Complete 10 Gbps Chip-to-chip Digital CMOS Silicon Photonic Link

Author(s):  
Xuezhe Zheng ◽  
Ying Luo ◽  
Jon Lexau ◽  
Frankie Liu ◽  
Guoliang Li ◽  
...  
2011 ◽  
Vol 29 (8) ◽  
pp. 1136-1142 ◽  
Author(s):  
Benjamin G. Lee ◽  
Clint L. Schow ◽  
Alexander V. Rylyakov ◽  
Joris Van Campenhout ◽  
William M. J. Green ◽  
...  

Author(s):  
Xuezhe Zheng ◽  
Ying Luo ◽  
Jon Lexau ◽  
Frankie Liu ◽  
Guoliang Li ◽  
...  

2012 ◽  
Vol 24 (14) ◽  
pp. 1260-1262 ◽  
Author(s):  
Xuezhe Zheng ◽  
Ying Luo ◽  
J. Lexau ◽  
F. Liu ◽  
Guoliang Li ◽  
...  

2009 ◽  
Vol E92-C (2) ◽  
pp. 217-223 ◽  
Author(s):  
Tao CHU ◽  
Hirohito YAMADA ◽  
Shigeru NAKAMURA ◽  
Masashige ISHIZAKA ◽  
Masatoshi TOKUSHIMA ◽  
...  

PIERS Online ◽  
2010 ◽  
Vol 6 (3) ◽  
pp. 273-278 ◽  
Author(s):  
David J. Moss ◽  
B. Corcoran ◽  
C. Monat ◽  
Christian Grillet ◽  
T. P. White ◽  
...  

2019 ◽  
Author(s):  
Yunlong Zhang ◽  
Djorn Karnick ◽  
Marc Schneider ◽  
Lars Eisenblätter ◽  
Thomas Kühner ◽  
...  

Nanophotonics ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 2377-2385 ◽  
Author(s):  
Zhao Cheng ◽  
Xiaolong Zhu ◽  
Michael Galili ◽  
Lars Hagedorn Frandsen ◽  
Hao Hu ◽  
...  

AbstractGraphene has been widely used in silicon-based optical modulators for its ultra-broadband light absorption and ultrafast optoelectronic response. By incorporating graphene and slow-light silicon photonic crystal waveguide (PhCW), here we propose and experimentally demonstrate a unique double-layer graphene electro-absorption modulator in telecommunication applications. The modulator exhibits a modulation depth of 0.5 dB/μm with a bandwidth of 13.6 GHz, while graphene coverage length is only 1.2 μm in simulations. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 GHz. The proposed graphene-PhCW modulator may have potentials in the applications of on-chip interconnections.


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Francesco Morichetti ◽  
Maziyar Milanizadeh ◽  
Matteo Petrini ◽  
Francesco Zanetto ◽  
Giorgio Ferrari ◽  
...  

AbstractFlexible optical networks require reconfigurable devices with operation on a wavelength range of several tens of nanometers, hitless tuneability (i.e. transparency to other channels during reconfiguration), and polarization independence. All these requirements have not been achieved yet in a single photonic integrated device and this is the reason why the potential of integrated photonics is still largely unexploited in the nodes of optical communication networks. Here we report on a fully-reconfigurable add-drop silicon photonic filter, which can be tuned well beyond the extended C-band (almost 100 nm) in a complete hitless (>35 dB channel isolation) and polarization transparent (1.2 dB polarization dependent loss) way. This achievement is the result of blended strategies applied to the design, calibration, tuning and control of the device. Transmission quality assessment on dual polarization 100 Gbit/s (QPSK) and 200 Gbit/s (16-QAM) signals demonstrates the suitability for dynamic bandwidth allocation in core networks, backhaul networks, intra- and inter-datacenter interconnects.


Author(s):  
Apostolos Tsakyridis ◽  
Eugenio Ruggeri ◽  
George Kalfas ◽  
Ruud M. Oldenbeuving ◽  
Paul W. L. van Dijk ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.


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