Towards multicolor correlative light and cathodoluminescence imaging with using upconversion nanophosphors

2013 ◽  
Author(s):  
S. Fukushima ◽  
T. Furukawa ◽  
H. Niioka ◽  
M. Ichimiya ◽  
T. Nagata ◽  
...  
Keyword(s):  
Cathodoluminescence Imaging

Charging microscopy and cathodoluminescence imaging of semi-insulating gallium arsenide

1986 ◽  
Vol 44 ◽  
pp. 816-817
Author(s):  
T.C. Sheu ◽  
S. Myhajlenko ◽  
D. Davito ◽  
J.L. Edwards ◽  
R. Roedel ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Secondary Electron ◽  
Crystal Defects ◽  
Device Performance ◽  
Gaas Wafer ◽  
Surface Charging ◽  
Gaas Substrates ◽  
Voltage Contrast ◽  
Cathodoluminescence Imaging ◽  
Scanning Electron

Liquid encapsulated Czochralski (LEC) semi-insulating (SI) GaAs has applications in integrated optics and integrated circuits. Yield and device performance is dependent on the homogeniety of the wafers. Therefore, it is important to characterise the uniformity of the GaAs substrates. In this respect, cathodoluminescence (CL) has been used to detect the presence of crystal defects and growth striations. However, when SI GaAs is examined in a scanning electron microscope (SEM), there will be a tendency for the surface to charge up. The surface charging affects the backscattered and secondary electron (SE) yield. Local variations in the surface charge will give rise to contrast (effectively voltage contrast) in the SE image. This may be associated with non-uniformities in the spatial distribution of resistivity. Wakefield et al have made use of “charging microscopy” to reveal resistivity variations across a SI GaAs wafer. In this work we report on CL imaging, the conditions used to obtain “charged” SE images and some aspects of the contrast behaviour.

Study on Evolution of Micropipes from Hexagonal Voids in 4H-SiC Crystals by Cathodoluminescence Imaging

2021 ◽  
Vol 27 (1) ◽  
pp. 215-226
Author(s):  
Aman Arora ◽  
Ankit Patel ◽  
Brajesh S. Yadav ◽  
Anshu Goyal ◽  
Om P. Thakur ◽  
...  
Keyword(s):  
Cathodoluminescence Imaging

Abstract

scholarly journals Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

2013 ◽  
Vol 20 (1) ◽  
pp. 55-60 ◽  
Author(s):  
Gunasekar Naresh-Kumar ◽  
Jochen Bruckbauer ◽  
Paul R. Edwards ◽  
Simon Kraeusel ◽  
Ben Hourahine ◽  
...  
Keyword(s):  
Structural Damage ◽  
Light Emission ◽  
Threading Dislocations ◽  
Nonradiative Recombination ◽  
Contrast Imaging ◽  
Force Microscopy ◽  
Electron Channeling ◽  
Microscopy Techniques ◽  
Cathodoluminescence Imaging ◽  
Edge Dislocations

AbstractWe combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

scholarly journals Combined SEM Electron-Beam-Induced Current and Cathodoluminescence Imaging and STEM Structural Analysis of GaN Light Emitting Diodes

2006 ◽  
Vol 12 (S02) ◽  
pp. 1514-1515 ◽  
Author(s):  
CM Parish ◽  
CL Progl ◽  
ME Salmon ◽  
PE Russell
Keyword(s):  
Electron Beam ◽  
Structural Analysis ◽  
Light Emitting Diodes ◽  
Induced Current ◽  
Light Emitting ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Imaging

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Telluride Mineralogy of the Deer Horn Au-Ag-Te-(Bi-Pb-W) Deposit, British Columbia: Implications for the Generation of Tellurides

2021 ◽  
Author(s):  
Jordan A. Roberts ◽  
Lee A. Groat ◽  
Paul G. Spry ◽  
Jan Cempírek
Keyword(s):  
British Columbia ◽  
Fluid Inclusions ◽  
Hanging Wall ◽  
Oscillatory Zoning ◽  
Stage Iii ◽  
Fine Grained ◽  
Melting Temperatures ◽  
Homogenization Temperatures ◽  
Intrusive Suite ◽  
Cathodoluminescence Imaging

ABSTRACT The Deer Horn deposit, located 150 km south of Smithers in west-central British Columbia, is an Eocene polymetallic system enriched in Au-Ag-Te with lesser amounts of Bi-Pb-W; the Au and Ag are hosted in Te-bearing minerals and Ag-rich gold (Au-Ag alloy). A quartz-sulfide vein system containing the main zones of Au-Ag-Te mineralization and attendant sericite alteration occurs in the hanging wall of a local, spatially related thrust fault and is genetically related to the nearby Eocene Nanika granodiorite intrusive suite. Tellurium-bearing minerals commonly form isolated euhedral to subhedral grains or composite grains (up to 525 μm in size) of Ag-, Bi-, Pb-, and Au-rich tellurium-bearing minerals (e.g., hessite, tellurobismuthite, volynskite, altaite, and petzite). Panchromatic cathodoluminescence imaging revealed four generations of quartz. Within remnant cores of quartz I, local oscillatory zoning occurs in quartz II. Fine-grained veinlets of quartz III and IV crosscut quartz I and II, showing evidence of at least two deformation events; late-forming veinlets of calcite crosscut all generations of quartz. The tellurides and Ag-rich gold occur in stage III quartz. Three types of fluid inclusions were observed in stage III and IV quartz: (1) aqueous liquid and vapor inclusions (L-V); (2) aqueous carbonic inclusions (L-L-V); and (3) carbonic inclusions (vapor-rich). Primary fluid inclusions related to the telluride mineralization within quartz III were tested with microthermometry, along with a few primary inclusions from quartz IV. Homogenization temperatures are 130.0–240.5 °C for L-V inclusions and 268.0–336.4 °C for L-L-V inclusions. Aqueous carbonic inclusions had solid CO2 melting temperatures from –62.1 to –56.8 °C, indicating the presence of ≈1 to 30 mol.% dissolved methane in these inclusions. The Deer Horn Au-Ag-Te-(Bi-Pb-W) deposit is a reduced intrusion-related gold system characterized by sheeted veins, metal zoning, low salinity aqueous-carbonic fluids, and a genetic relationship to an Eocene granodiorite. Values of δ34S of pyrite vary from –1.6 to 1.6 per mil and are compatible with a magmatic source of sulfur.

scholarly journals Spatial Distribution of Defect Luminescence in ZnO Nanorods: An Investigation by Spectral Cathodoluminescence Imaging

2018 ◽  
Vol 215 (19) ◽  
pp. 1800389 ◽  
Author(s):  
Liangchen Zhu ◽  
Mark Lockrey ◽  
Matthew R. Phillips ◽  
Cuong Ton-That
Keyword(s):  
Spatial Distribution ◽  
Zno Nanorods ◽  
Cathodoluminescence Imaging ◽  
Defect Luminescence

Hyperspectral Cathodoluminescence Imaging and Analysis Extending from Ultraviolet to Near Infrared

2012 ◽  
Vol 18 (6) ◽  
pp. 1239-1245 ◽  
Author(s):  
C.M. MacRae ◽  
N.C. Wilson ◽  
A. Torpy ◽  
C.J. Davidson
Keyword(s):  
Rare Earth ◽  
Near Infrared ◽  
Preliminary Investigation ◽  
X Rays ◽  
Spectral Mapping ◽  
X Ray ◽  
Quantitative Electron Probe Microanalysis ◽  
Uv Visible ◽  
Intense Emission ◽  
Cathodoluminescence Imaging

AbstractThe measurement of near-infrared (NIR) cathodoluminescence (CL) with sufficient sensitivity to allow full spectral mapping has been investigated through the application of optimized grating spectrometers that allow the ultraviolet (UV), visible, and NIR CL spectra to be measured simultaneously. Two optical spectrometers have been integrated into an electron microprobe, allowing simultaneous collection of hyperspectral CL (UV-NIR), characteristic X-rays, and electron signals. Combined hyperspectral CL spectra collected from two natural apatite (Ca5[PO4]3[OH,F]) samples from Wilberforce (Ontario, Canada) and Durango (Mexico) were qualitatively analyzed to identify the emission centers and then deconvoluted pixel-by-pixel using least-squares fitting to produce a series of ion-resolved CL intensity maps. Preliminary investigation of apatite has shown strong NIR emissions associated primarily with the rare-earth element Nd. Details of growth and alteration were revealed in the NIR that were not discernable with electron-induced X-ray mapping. Intense emission centers from Nd3+ and Sm3+ were observed in the spectra from both apatites, along with minor emissions from other 3+ rare-earth elements. Quantitative electron probe microanalysis was performed on points within the mapped area of the Durango apatite to produce a calibration line relating cathodoluminescent intensity of the fitted peak centered at 1,073 nm (1.156 eV) to the Nd concentration.

Near‐infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs

1992 ◽  
Vol 61 (2) ◽  
pp. 222-224 ◽  
Author(s):  
D. H. Rich ◽  
K. C. Rajkumar ◽  
Li Chen ◽  
A. Madhukar ◽  
F. J. Grunthaner
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Cathodoluminescence Imaging
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