scholarly journals Enhanced direct-gap light emission from Si-capped n+-Ge epitaxial layers on Si after post-growth rapid cyclic annealing: impact of non-radiative interface recombination toward Ge/Si double heterostructure lasers: erratum

2018 ◽  
Vol 26 (18) ◽  
pp. 23796
Author(s):  
Naoki Higashitarumizu ◽  
Yasuhiko Ishikawa
Keyword(s):  
Light Emission ◽  
Epitaxial Layers ◽  
Double Heterostructure ◽  
Cyclic Annealing ◽  
Interface Recombination

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

Impact of interface recombination on direct-gap photoluminescence from Ge epitaxial layers on Si

2019 ◽  
Vol 58 (SB) ◽  
pp. SBBE08
Author(s):  
Motoki Yako ◽  
Naoki Higashitarumizu ◽  
Yasuhiko Ishikawa
Keyword(s):  
Epitaxial Layers ◽  
Interface Recombination

Influence of Interface Recombination in Light Emission from Lateral Si-Based Light Emitting Devices

2019 ◽  
Vol 3 (33) ◽  
pp. 23-29
Author(s):  
Phuong LeMinh ◽  
Tu Hoang ◽  
Jisk Holleman ◽  
Jurriaan Schmitz
Keyword(s):  
Light Emission ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Interface Recombination

Polarization properties of light emission of AlGaAs double heterostructure injection lasers

1997 ◽  
Author(s):  
Ivan S. Manak ◽  
Yu. L. Zhuravskii ◽  
M. T. Klokova ◽  
Vasily L. Kasyutich
Keyword(s):  
Light Emission ◽  
Double Heterostructure ◽  
Injection Lasers

Evaluation of the influence of an embedded porous silicon layer on the bulk lifetime of epitaxial layers and the interface recombination at the epitaxial layer/porous silicon interface

2013 ◽  
Vol 22 (11) ◽  
pp. 1118-1127 ◽  
Author(s):  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Frederic Dross ◽  
Maarten Debucquoy ◽  
Philipp Rosenits ◽  
Kris Van Nieuwenhuysen ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Epitaxial Layer ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Epitaxial Layers ◽  
Interface Recombination ◽  
Silicon Interface

Visible light emission from self-catalyzed GaInP/GaP core-shell double heterostructure nanowires on silicon

2010 ◽  
Vol 108 (3) ◽  
pp. 034315 ◽  
Author(s):  
J. Tatebayashi ◽  
A. Lin ◽  
P. S. Wong ◽  
R. F. Hick ◽  
D. L. Huffaker
Keyword(s):  
Visible Light ◽  
Light Emission ◽  
Core Shell ◽  
Double Heterostructure ◽  
Visible Light Emission

Influence of Interface Recombination in Light Emission from Lateral Si-Based Light Emitting Devices

2019 ◽  
Vol 3 (11) ◽  
pp. 9-16
Author(s):  
Tu Hoang ◽  
Phuong LeMinh ◽  
Jisk Holleman ◽  
Jurriaan Schmitz
Keyword(s):  
Light Emission ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Interface Recombination
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