Integral imaging using a MoS₂ Schottky diode

2021 ◽  
Author(s):  
SUNGWON CHOI ◽  
Jongtae Ahn ◽  
Il-Ho Ahn ◽  
Do Kyung Hwang ◽  
Min-Chul Park
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.


Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.


1990 ◽  
Vol 26 (7) ◽  
pp. 487 ◽  
Author(s):  
S. Loualiche ◽  
A. le Corre ◽  
A. Ginudi ◽  
L. Henry ◽  
C. Vaudry ◽  
...  
Keyword(s):  

2020 ◽  
Vol 191 ◽  
pp. 108618 ◽  
Author(s):  
Jian Zhu ◽  
Changshi Lao ◽  
Tianning Chen ◽  
Jensen Li

Author(s):  
Ying Yuan ◽  
Xiaorui Wang ◽  
Yang Yang ◽  
Hang Yuan ◽  
Chao Zhang ◽  
...  

Abstract The full-chain system performance characterization is very important for the optimization design of an integral imaging three-dimensional (3D) display system. In this paper, the acquisition and display processes of 3D scene will be treated as a complete light field information transmission process. The full-chain performance characterization model of an integral imaging 3D display system is established, which uses the 3D voxel, the image depth, and the field of view of the reconstructed images as the 3D display quality evaluation indicators. Unlike most of the previous research results using the ideal integral imaging model, the proposed full-chain performance characterization model considering the diffraction effect and optical aberration of the microlens array, the sampling effect of the detector, 3D image data scaling, and the human visual system, can accurately describe the actual 3D light field transmission and convergence characteristics. The relationships between key parameters of an integral imaging 3D display system and the 3D display quality evaluation indicators are analyzed and discussed by the simulation experiment. The results will be helpful for the optimization design of a high-quality integral imaging 3D display system.


CrystEngComm ◽  
2021 ◽  
Author(s):  
Sanjay Kumar ◽  
Soumen Singha ◽  
Rajkumar Jana ◽  
RITUPARNA MONDAL ◽  
Partha Pratim Bag ◽  
...  

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...


2021 ◽  
Vol 118 (12) ◽  
pp. 122102
Author(s):  
Qinglong Yan ◽  
Hehe Gong ◽  
Jincheng Zhang ◽  
Jiandong Ye ◽  
Hong Zhou ◽  
...  

2021 ◽  
pp. 160394
Author(s):  
E.B. Yakimov ◽  
A.Y. Polyakov ◽  
I.V. Shchemerov ◽  
N.B. Smirnov ◽  
A.A. Vasilev ◽  
...  
Keyword(s):  

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