Optical loss analyses and energy yield modelling of perovskite/silicon multijunction solar cells

2016 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Robert Gehlhaar ◽  
Jeffrey G. Tait ◽  
Weiming Qiu ◽  
Joao Bastos ◽  
...  
Keyword(s):  
Solar Cells ◽  
Optical Loss ◽  
Energy Yield ◽  
Multijunction Solar Cells

Theoretical energy yield of GaAs-on-Si tandem solar cells

2014 ◽  
Vol 1638 ◽  
Author(s):  
Haohui Liu ◽  
Zekun Ren ◽  
Zhe Liu ◽  
Riley E. Brandt ◽  
Jonathan P. Mailoa ◽  
...  
Keyword(s):  
Solar Cells ◽  
Theoretical Study ◽  
Technology Development ◽  
Spectral Irradiance ◽  
Yield Potential ◽  
Energy Yield ◽  
Performance Potential ◽  
Tandem Solar Cells ◽  
Multijunction Solar Cells ◽  
Irradiance Data

ABSTRACTIII-V on Si multijunction solar cells represent an alternative to traditional compound III-V multijunction cells as a promising way to achieve high efficiencies. A theoretical study on the energy yield of GaAs/Si tandem solar cells is performed to assess the performance potential and sensitivity to spectral variations. Recorded time-dependent spectral irradiance data in two locations (Singapore and Denver) were used. We found that a 4-terminal contact scheme with thick top cell confers distinctive advantages over a 2-terminal scheme, giving a yield potential 21% higher than the 2-terminal scheme in Singapore and 17% higher in Denver. The theoretical energy yield benefit of a 4-terminal device emphasizes the need for further technology development in this design space.

scholarly journals Optimization of Multijunction Solar Cells Through Indoor Energy Yield Measurements

2015 ◽  
Vol 5 (1) ◽  
pp. 438-445 ◽  
Author(s):  
Ivan Garcia ◽  
William E. McMahon ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Aron Habte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Yield ◽  
Multijunction Solar Cells

Oxygenated Protocrystalline Silicon Thin Films for Wide Bandgap Solar Cells

2010 ◽  
Vol 1245 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Jan Willem Schüttauf ◽  
Karine van der Werf
Keyword(s):  
Solar Cells ◽  
Temperature Coefficient ◽  
Solar Spectrum ◽  
Wide Bandgap ◽  
Energy Yield ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Multijunction Solar Cells ◽  
Reduced Temperature

AbstractProtocrystalline silicon, which is a material that has enhanced medium range order (MRO), can be prepared by using high hydrogen dilution in PECVD, or, alternatively, using high atomic H production from pure silane in HWCVD. We show that this material can accommodate percentage-level concentrations of oxygen without deleterious effects. The advantage of protocrystalline SiO:H for application in multijunction solar cells is not only that it has an increased band gap, providing a better match with the solar spectrum, but also that the solar cells incorporating this material have a reduced temperature coefficient. Further, protocrystalline materials have a reduced susceptibility to light-induced defect creation. We present the unique result in the PV field that these oxygenated protocrystalline silicon solar cells have an efficiency temperature coefficient (TCE) that is virtually zero (TCE is between -0.08%/°C and 0.0/°C). It is thus beneficial to make this cell the current limiting cell in multibandgap cells, which will lead to improved annual energy yield.

scholarly journals Assessment of the energy yield gain in high CPV systems using graphene-enhanced III-V multijunction solar cells

2019 ◽  
Author(s):  
Ignacio Rey-Stolle ◽  
Laura Barrutia ◽  
Iván García ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Energy Yield ◽  
Multijunction Solar Cells ◽  
Yield Gain

scholarly journals Theoretical and experimental assessment of thinned germanium substrates for III–V multijunction solar cells

2020 ◽  
Vol 28 (11) ◽  
pp. 1097-1106
Author(s):  
Iván Lombardero ◽  
Mario Ochoa ◽  
Naoya Miyashita ◽  
Yoshitaka Okada ◽  
Carlos Algora
Keyword(s):  
Solar Cells ◽  
Experimental Assessment ◽  
Multijunction Solar Cells ◽  
Germanium Substrates

Growth aspects of AlGaAs/GaAs tunnel diodes for multijunction solar cells

2005 ◽  
Vol 40 (10-11) ◽  
pp. 1039-1042 ◽  
Author(s):  
G. Timò ◽  
C. Flores ◽  
R. Campesato
Keyword(s):  
Solar Cells ◽  
Tunnel Diodes ◽  
Multijunction Solar Cells

Development of germanium-on-germanium engineered substrates for III-V multijunction solar cells

2020 ◽  
Author(s):  
Guillaume Courtois ◽  
Rufi Kurstjens ◽  
Jinyoun Cho ◽  
Kristof Dessein ◽  
Ivan Garcia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Multijunction Solar Cells ◽  
Engineered Substrates

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

scholarly journals Cell/Module Integration Technology with Wire-Embedded EVA Sheet

2021 ◽  
Vol 11 (9) ◽  
pp. 4170
Author(s):  
Jeong Eun Park ◽  
Won Seok Choi ◽  
Donggun Lim
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Power ◽  
Short Circuit ◽  
Optical Loss ◽  
Manufacturing Cost ◽  
Power Module ◽  
Manufacturing Method ◽  
Front Electrode ◽  
The Wire

Silicon wafers are crucial for determining the price of solar cell modules. To reduce the manufacturing cost of photovoltaic devices, the thicknesses of wafers are reduced. However, the conventional module manufacturing method using the tabbing process has a disadvantage in that the cell is damaged because of the high temperature and pressure of the soldering process, which is complicated, thus increasing the process cost. Consequently, when the wafer is thinned, the breakage rate increases during the module process, resulting in a lower yield; further, the module performance decreases owing to cracks and thermal stress. To solve this problem, a module manufacturing method is proposed in which cells and wires are bonded through the lamination process. This method minimizes the thermal damage and mechanical stress applied to solar cells during the tabbing process, thereby manufacturing high-power modules. When adopting this method, the front electrode should be customized because it requires busbarless solar cells different from the existing busbar solar cells. Accordingly, the front electrode was designed using various simulation programs such as Griddler 2.5 and MathCAD, and the effect of the diameter and number of wires in contact with the front finger line of the solar cell on the module characteristics was analyzed. Consequently, the efficiency of the module manufactured with 12 wires and a wire diameter of 0.36 mm exhibited the highest efficiency at 20.28%. This is because even if the optical loss increases with the diameter of the wire, the series resistance considerably decreases rather than the loss of the short-circuit current, thereby improving the fill factor. The characteristics of the wire-embedded ethylene vinyl acetate (EVA) sheet module were confirmed to be better than those of the five busbar tabbing modules manufactured by the tabbing process; further, a high-power module that sufficiently compensated for the disadvantages of the tabbing module was manufactured.

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