Oxygenated Protocrystalline Silicon Thin Films for Wide Bandgap Solar Cells

2010 ◽  
Vol 1245 ◽  
Author(s):  
Ruud E.I. Schropp ◽  
Jan Willem Schüttauf ◽  
Karine van der Werf
Keyword(s):  
Solar Cells ◽  
Temperature Coefficient ◽  
Solar Spectrum ◽  
Wide Bandgap ◽  
Energy Yield ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Multijunction Solar Cells ◽  
Reduced Temperature

AbstractProtocrystalline silicon, which is a material that has enhanced medium range order (MRO), can be prepared by using high hydrogen dilution in PECVD, or, alternatively, using high atomic H production from pure silane in HWCVD. We show that this material can accommodate percentage-level concentrations of oxygen without deleterious effects. The advantage of protocrystalline SiO:H for application in multijunction solar cells is not only that it has an increased band gap, providing a better match with the solar spectrum, but also that the solar cells incorporating this material have a reduced temperature coefficient. Further, protocrystalline materials have a reduced susceptibility to light-induced defect creation. We present the unique result in the PV field that these oxygenated protocrystalline silicon solar cells have an efficiency temperature coefficient (TCE) that is virtually zero (TCE is between -0.08%/°C and 0.0/°C). It is thus beneficial to make this cell the current limiting cell in multibandgap cells, which will lead to improved annual energy yield.

Development of Stable a-Si/a-SiGe Tandem Solar Cell Submodules Deposited by a Very High Hydrogen Dilution at Low Temperature

1998 ◽  
Vol 507 ◽  
Author(s):  
Masaki Shima ◽  
Masao Isomura ◽  
Eiji Maruyama ◽  
Shingo Okamoto ◽  
Hisao Haku ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Silicon Germanium ◽  
Structural Variations ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Hydrogen Radicals ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Very High

ABSTRACTThe world's highest stabilized efficiency of 9.5% (light-soaked and measured by the Japan Quality Assurance Organization (JQA)) for an a-Si/a-SiGe superstrate-type solar cell submodule (area: 1200 cm2) has been achieved. This value was obtained by investigating the effects of very-high hydrogen dilution of up to 54:1 (= H2: SiH4) on hydrogenated amorphous silicon germanium (a-SiGe:H) deposition at a low substrate temperature (Ts). It was found that deterioration of the film properties of a-SiGe:H when Ts decreases under low hydrogen dilution conditions can be suppressed by the high hydrogen dilution. This finding probably indicates that the energy provided by hydrogen radicals substitutes for the lost energy caused by the decrease in Ts and that sufficient surface reactions can occur. In addition, results from an estimation of the hydrogen and germanium contents of a-SiGe:H suggest the occurrence of some kinds of structural variations by the high hydrogen dilution. A guideline for optimization of a-SiGe:H films for solar cells can be presented on the basis of the experimental results. The possibility of a-SiGe:H as a narrow gap material for a-Si stacked solar cells in contrast with microcrystalline silicon (μ c-Si:H) will also be discussed from various standpoints. At present, a-SiGe:H is considered to have an advantage over μ1 c-Si:H.

Theoretical energy yield of GaAs-on-Si tandem solar cells

2014 ◽  
Vol 1638 ◽  
Author(s):  
Haohui Liu ◽  
Zekun Ren ◽  
Zhe Liu ◽  
Riley E. Brandt ◽  
Jonathan P. Mailoa ◽  
...  
Keyword(s):  
Solar Cells ◽  
Theoretical Study ◽  
Technology Development ◽  
Spectral Irradiance ◽  
Yield Potential ◽  
Energy Yield ◽  
Performance Potential ◽  
Tandem Solar Cells ◽  
Multijunction Solar Cells ◽  
Irradiance Data

ABSTRACTIII-V on Si multijunction solar cells represent an alternative to traditional compound III-V multijunction cells as a promising way to achieve high efficiencies. A theoretical study on the energy yield of GaAs/Si tandem solar cells is performed to assess the performance potential and sensitivity to spectral variations. Recorded time-dependent spectral irradiance data in two locations (Singapore and Denver) were used. We found that a 4-terminal contact scheme with thick top cell confers distinctive advantages over a 2-terminal scheme, giving a yield potential 21% higher than the 2-terminal scheme in Singapore and 17% higher in Denver. The theoretical energy yield benefit of a 4-terminal device emphasizes the need for further technology development in this design space.

Stability of Single and Tandem Junction A-Si:H Solar Cells Grown using the ECR Process

1997 ◽  
Vol 467 ◽  
Author(s):  
Vikram L. Dalal ◽  
Tim Maxson ◽  
Robert Girvan ◽  
Sohail Haroon
Keyword(s):  
Solar Cells ◽  
Stability Studies ◽  
Stability Tests ◽  
High Hydrogen ◽  
Single Junction ◽  
Hydrogen Dilution ◽  
The Stability

ABSTRACTWe report on the fabrication and stability tests of single junction a-Si:H, and tandem junction a-Si:H/a-Si:H solar cells using the ECR process under high hydrogen dilution (H-ECR process). We show that devices with high fill factors can be made using the H-ECR process. We also report on the stability studies of the solar cells under 1 and 2-sun illumination conditions. The solar cells show very little degradation even after 500 hours of illumination under 2 x sunlight illumination.

Optical loss analyses and energy yield modelling of perovskite/silicon multijunction solar cells

2016 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Robert Gehlhaar ◽  
Jeffrey G. Tait ◽  
Weiming Qiu ◽  
Joao Bastos ◽  
...  
Keyword(s):  
Solar Cells ◽  
Optical Loss ◽  
Energy Yield ◽  
Multijunction Solar Cells

scholarly journals Optimization of Multijunction Solar Cells Through Indoor Energy Yield Measurements

2015 ◽  
Vol 5 (1) ◽  
pp. 438-445 ◽  
Author(s):  
Ivan Garcia ◽  
William E. McMahon ◽  
Myles A. Steiner ◽  
John F. Geisz ◽  
Aron Habte ◽  
...  
Keyword(s):  
Solar Cells ◽  
Energy Yield ◽  
Multijunction Solar Cells

scholarly journals The Influence of Solar Spectrum and Concentration Factor on the Material Choice and the Efficiency of Multijunction Solar Cells

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Daniel N. Micha ◽  
Ricardo T. Silvares Junior
Keyword(s):  
Solar Cells ◽  
Concentration Factor ◽  
Detailed Balance ◽  
Solar Spectrum ◽  
Theoretical Method ◽  
Balance Model ◽  
Bandgap Energy ◽  
Multijunction Solar Cells ◽  
Material Choice ◽  
Conversion Efficiencies

AbstractIn this work, we revisit the theoretical study on the conversion efficiency of series-connected multijunction solar cells. The theoretical method, based on the detailed balance model, is then applied to devices with 2 to 6 junctions under different illumination conditions. As results, (i) we show that the peaks in the efficiency distribution occur for recurrent values of bottom junction bandgap energy corresponding to atmospheric absorption in the solar spectrum, and (ii) we demonstrate that variations in the number of junctions, in the incident solar spectrum, and in the concentration factor lead to changes in the optimum bandgap energy set but that the bottom junction bandgap energy only changes among the recurrent values presented before. Additionally, we highlight that high conversion efficiencies take place for a broad distribution of bandgap energy combination, which make the choice of materials for the device more flexible. Therefore, based on the overall results, we propose more than a hundred III-V, II-VI and IV semiconductor material candidates to compose the bottom junction of highly efficient devices.

Properties of a-SiC:H films and solar cells

2000 ◽  
Vol 77 (9) ◽  
pp. 699-704
Author(s):  
R Gharbi ◽  
M Fathallah ◽  
C F Pirri ◽  
E Tresso ◽  
G Crovini ◽  
...  
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Open Circuit Voltage ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Light Illumination ◽  
High Hydrogen ◽  
Hydrogen Dilution ◽  
Effect Of Light

a-SiC:H samples and solar cells were made by plasma-enhanced chemical vapor deposition (PECVD) using a multichamber deposition system. The effect of light illumination on samples prepared with and without hydrogen dilution was studied. The phototransport properties of the samples prepared with high hydrogen dilution were more stable versus time of illumination than non diluted ones.The samples were inserted as an intrinsic layer in semitransparent solar cells. The performance of solar cells depends on the energy gap and thickness of the intrinsic layer. High hydrogen dilution may increase the energy gap and act to decrease the structure uniformity. The results show that open circuit voltage Voc decreases with light illumination and depends on the doped p+ layer quality and created defects in the intrinsic layer. PACS Nos.: 70, 72, 40

Recombination in n-i-p (Substrate) a-Si:H Solar Cells with Silicon Carbide and Protocrystalline p-Layers

2003 ◽  
Vol 762 ◽  
Author(s):  
V. Vlahos ◽  
J. Deng ◽  
J.M. Pearce ◽  
R.J. Koval ◽  
G.M. Ferreira ◽  
...  
Keyword(s):  
Solar Cells ◽  
Forward Bias ◽  
Open Circuit ◽  
High Hydrogen ◽  
Beneficial Effects ◽  
Hydrogen Dilution ◽  
Cell Structures ◽  
Current Characteristics ◽  
Hydrogenated Amorphous

AbstractA study was carried out on hydrogenated amorphous silicon (a-Si:H) n-i-p (substrate) solar cell structures with p-a-SiC:H and highly diluted p-Si:H layers grown with different dilution ratios R=[H2]/[SiH4]. The contributions of the recombination at the p/i interfaces to the forward bias dark current characteristics were identified and quantified for the different cell structures. In both cell structures the role of the p/i interfaces was identified and it is found that the lowest p/i interface recombination is obtained with protocrystalline p-Si:H layers having no microcrystalline component. The results with p-Si:H layers are attributed not only to their properties but also to the subsurface modification of the intrinsic layer. Evidence is also presented that points to the beneficial effects of the high hydrogen dilution and power used in the deposition of these p-layers in creating the p/i interface regions. The limitations on 1 sun open circuit voltage (VOC) imposed by the p/i recombination present in all the cell structures is consistent with the mechanisms proposed by Deng et al.[1]. The results presented here also point to why the 1 sun VOC in protocrystalline p-Si:H solar cells is higher than that in p-a-SiC:H cells.

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