scholarly journals Visible Light Response of Wide Band Gap Semiconductor Photocatalysts by Doping of Transition Metal Ions. Aiming at Water Splitting.

Hyomen Kagaku ◽  
2003 ◽  
Vol 24 (1) ◽  
pp. 31-38 ◽  
Author(s):  
Hideki KATO ◽  
Akihiko KUDO
2019 ◽  
Vol 9 (14) ◽  
pp. 3619-3622 ◽  
Author(s):  
Shuaishuai Liu ◽  
Peng Li ◽  
Naoto Umezawa ◽  
Wei Zhou ◽  
Hideki Abe ◽  
...  

A wide band-gap photocatalyst SrNb2O6 was adjusted to response to visible light in H2 and O2 evolution due to the new electron state in its band gap created by the Sn(ii) dopant.


2008 ◽  
Vol 140 ◽  
pp. 3-8
Author(s):  
M. Godlewski ◽  
S. Yatsunenko ◽  
A. Opalińska ◽  
Witold Łojkowski

Nanoparticles of the wide band gap oxides doped with rare earth (RE) ions are prospective materials for application in optoelectronics as phosphors in a new generation of light sources. In this paper the mechanisms of the excitation of efficient 4f-4f intra-shell transitions in RE doped nanoparticles are discussed. These mechanisms either enhance the rate of host to impurity energy transfer or stimulate the intra-shell transitions of RE ions.


RSC Advances ◽  
2016 ◽  
Vol 6 (89) ◽  
pp. 86240-86244 ◽  
Author(s):  
Honglin Gao ◽  
Meiming Zhao ◽  
Shicheng Yan ◽  
Peng Zhou ◽  
Zeyan Li ◽  
...  

Anatase Mg0.05Ta0.95O1.15N0.85, exhibiting a narrow band gap for solar hydrogen, is a promising visible-light-response photocatalyst for photocatalytic or photoelectrochemical water splitting.


2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.


2019 ◽  
Vol 4 (29) ◽  
pp. 8460-8469 ◽  
Author(s):  
Li Peng ◽  
Yang Xiao ◽  
Xiao‐li Wang ◽  
Da‐wei Feng ◽  
Hui Yu ◽  
...  

2020 ◽  
Vol 44 (22) ◽  
pp. 9238-9247
Author(s):  
Xin Ji ◽  
Yong Guo ◽  
Shugui Hua ◽  
Huiyan Li ◽  
Sunchen Zhang

In this paper, the sensitization photodegradation of single and mixed dyes by wide band gap boron nitride (BN, 3.94 eV) under visible light irradiation has been investigated for the first time.


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