How Can the Intra-Shell Emissions of Rare Earth and Transition Metal Ions in Thin Films and Nanoparticles Be Stimulated?

2008 ◽  
Vol 140 ◽  
pp. 3-8
Author(s):  
M. Godlewski ◽  
S. Yatsunenko ◽  
A. Opalińska ◽  
Witold Łojkowski

Nanoparticles of the wide band gap oxides doped with rare earth (RE) ions are prospective materials for application in optoelectronics as phosphors in a new generation of light sources. In this paper the mechanisms of the excitation of efficient 4f-4f intra-shell transitions in RE doped nanoparticles are discussed. These mechanisms either enhance the rate of host to impurity energy transfer or stimulate the intra-shell transitions of RE ions.

2007 ◽  
Vol 128 ◽  
pp. 123-134 ◽  
Author(s):  
M. Godlewski ◽  
S. Yatsunenko ◽  
M. Zalewska ◽  
A. Kłonkowski ◽  
Tomas Strachowski ◽  
...  

Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications. The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related to spin dependent interactions of free carriers with impurities are discussed. These interactions enhance the TM, RE intra-shell transitions by increasing the rate of host to impurity energy transfer. It is shown also that Al doping increases the intensity of light emission from ZnO nanoparticles.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2019 ◽  
Vol 11 (44) ◽  
pp. 41516-41522
Author(s):  
Hong Je Choi ◽  
Woosun Jang ◽  
Young Eun Kim ◽  
Aloysius Soon ◽  
Yong Soo Cho

2014 ◽  
Vol 43 (25) ◽  
pp. 9620-9632 ◽  
Author(s):  
T. O. L. Sunde ◽  
M. Lindgren ◽  
T. O. Mason ◽  
M.-A. Einarsrud ◽  
T. Grande

Wide band-gap semiconductors doped with luminescent rare earth elements (REEs) have attracted recent interest due to their unique optical properties.


Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...


2020 ◽  
Vol 22 (48) ◽  
pp. 27987-27998
Author(s):  
Mehmet Aras ◽  
Sümeyra Güler-Kılıç ◽  
Çetin Kılıç

The segregation tendency of an impurity in a semiconductor nanowire can be tuned by adjusting the Fermi level position.


2010 ◽  
Vol 10 (3) ◽  
pp. S395-S398 ◽  
Author(s):  
Soon Il Jung ◽  
Kyung Hoon Yoon ◽  
Sejin Ahn ◽  
Jihye Gwak ◽  
Jae Ho Yun

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