scholarly journals Pengaruh Waktu Pelindian pada Proses Pemurnian Silikon Tingkat Metalurgi Menggunakan Larutan HCl[Effect of Leaching Time on Purification Process of Metallurgical Grade Silicon by Using Acid Solution]

Metalurgi ◽  
2016 ◽  
Vol 27 (1) ◽  
pp. 1
Author(s):  
Bintang Adjiantoro ◽  
Efendi Mabruri
Keyword(s):  
Acid Solution ◽  
Extraction Efficiency ◽  
Acid Leaching ◽  
Purification Process ◽  
Metallurgical Grade Silicon ◽  
Mechanical Stirring ◽  
Metal Impurities ◽  
Grade Silicon ◽  
Impurity Elements ◽  
Leaching Efficiency

IntisariPENGARUH WAKTU PELINDIAN PADA PROSES PEMURNIAN SILIKON TINGKAT METALURGI MENGGUNAKAN LARUTAN HCl. Proses pemurnian silikon tingkat metalurgi (MG-Si)dengan menggunakan metoda pelindian asam pada konsentrasi 2,45mol/L HCl telah dilakukan dengan memvariasikan waktu pelindian pada temperatur didih (±100 °C) dan gerakan pengadukan mekanik. Hasil penelitian menunjukkan bahwa proses pelindian MG-Si dengan HCl dapat digunakan untuk menghilangkan unsur pengotor logam. Persentase hasil efisiensi ekstraksi dari unsur pengotor yang terkandung di dalam MG-Si dengan pelarutan HCl masing-masing mencapai 99,996 % untuk Al, 98,247 % untuk Ti dan 98,491 % untuk Fe pada waktu pelindian 120 jam. Sedangkan efisiensi larutan HCl terhadap unsur pengotor dengan gerakan pengadukan mekanik mencapai 99,04 %.Kata kunci : Silikon tingkat metalurgi, Pemurnian dengan proses kimia, Pelindian asam, PengotorAbstractEFFECT OF LEACHING TIME ON PURIFICATION PROCESS OF METALLURGICAL GRADE SILICON BY USING ACID SOLUTION. The purification process of metallurgical grade silicon (MG-Si) using acid leaching method at a concentration of 2.45 mol/L HCl was performed by varying the leaching time atboiling temperature ( ±100 °C) and with mechanical stirring. The results showed that the leaching process of MG-Si with HCl can be used to eliminate the element of metal impurities. The extraction efficiency of impurity elements contained in the MG-Si by HCl dissolution is 99.996 % for Al, 98.247 % for Ti and 98.491 % for Fe at leaching time of 120 hours. Whereas the leaching efficiency of HCl solution on the impurities using mechanical stirring is 99.04 %.Keywords : Metallurgical grade silicon, Chemical purification, Acid leaching, Impurities

Metal Impurities Removal from Metallurgical Grade Silicon by Hydrochloric Acid Leaching

2013 ◽  
Vol 813 ◽  
pp. 7-10 ◽  
Author(s):  
Xiao Ming Li ◽  
Yan Mei Dang ◽  
Wen Feng Li ◽  
Jun Xue Zhao ◽  
Ya Ru Cui
Keyword(s):  
Particle Size ◽  
Reaction Time ◽  
Mass Fraction ◽  
Acid Leaching ◽  
Silicon Powder ◽  
Metallurgical Grade Silicon ◽  
Mechanical Stirring ◽  
Grade Silicon ◽  
Impurities Removal ◽  
Hydrometallurgical Method

As a pre-treatment process for producing solar-grade silicon, hydrometallurgical method could remove the most of metallic impurities of metallurgical-grade silicon, which is a hopeful technology to provide solar energy material independence of the Siemens skill. Factors such as the hydrochloric mass fraction, temperature, reaction time, and particle size of silicon powders were investigated in the impurities removal experiments under the condition of mechanical stirring. The leached samples were analyzed by ICP and SEM. The optimum parameters, hydrochloric mass fraction 5%, temperature 80°C, reaction time 9h, particle size 75μm, were determined by single factor experiments and orthogonal experiments. The 86.1% of Fe, 68.1% of Al, 85.9% of Ca and 25.9% of B impurity was removed from metallurgical-grade silicon powder.

Experiment Research on Purifying Metallurgical Grade Silicon and Crystal Growth in Directional Solidification

2009 ◽  
Vol 79-82 ◽  
pp. 1213-1216 ◽  
Author(s):  
Xiang Yang Mei ◽  
Wen Hui Ma ◽  
Kui Xian Wei ◽  
Yong Nian Dai
Keyword(s):  
Crystal Growth ◽  
Directional Solidification ◽  
Crystalline Silicon ◽  
Acid Leaching ◽  
Raw Material ◽  
Metallurgical Grade Silicon ◽  
Silicon Ingot ◽  
Metal Impurities ◽  
Segregation Effect ◽  
Grade Silicon

The main raw material of solar energy is multi-crystalline silicon. Directional solidification technique is one important technological process of metallurgy purification technology for multi-crystalline silicon. It can purify metallurgical grade silicon by removing metal impurities and control crystal growth at the same time. In experiment, metallurgical grade silicon by acid leaching pre-treatment, was purified by our self-assembled directional solidification furnace. The sample was analyzed by electron-prode micro analysis (EPMA). According to the results, the removal efficiency of Fe and Al is 96.3% and 96.7%, respectively. The removing mechanism of metal impurities and the difference between theory value and experiment value were also discussed. The segregation effect in directional solidification is the reason of removing Fe, but analgesic effects of the segregation effect combined with vacuum volatilization are that of removing Al. When the silicon ingot was cooled down, lengthways section of silicon ingot was cut and etched, crystal growth was studied. The results indicate that columnar crystal growth shows diverging tendency from the bottom to the top of silicon ingots, and solidification interface shape is convex. The reasons may be the nucleation of new crystals on crucible sidewall is very serious and the pulling rate is too high.

Comparison between slag refining processes for B removal with metallurgical grade silicon and Si–Sn alloy

2018 ◽  
Vol 115 (3) ◽  
pp. 312 ◽  
Author(s):  
Rowaid Al-khazraji ◽  
Yaqiong Li ◽  
Lifeng Zhang
Keyword(s):  
Removal Efficiency ◽  
Acid Leaching ◽  
Experimental Results ◽  
Mass Ratio ◽  
Metallurgical Grade Silicon ◽  
Clear Effect ◽  
Slag Refining ◽  
Before And After ◽  
Grade Silicon ◽  
Refining Processes

Boron (B) removal by slag refining using CaO–SiO2–CaCl2 was investigated in metallurgical-grade silicon (MG-Si) and 75 wt% Si–Sn alloy. Experiments were conducted at 1500 °C for 15 min. The microstructure was characterized before and after refining. The effects of acid leaching, basicity, and slag/Si mass ratio on B removal were investigated. Experimental results showed that acid leaching had no effect on B removal from MG-Si but had a clear effect on the refined Si–Sn alloy after slag refining. The final B concentration was highly affected by the CaO/SiO2 mass ratio with minimum value, where the content of B was reduced from 18.36 ppmw to 5.5 ppmw at the CaO/SiO2 = 1.2 for MG-Si slag refining and from 18.36 ppmw to 3.7 ppmw at CaO/SiO2 = 1.5 for 75 wt% Si–Sn alloy. Increasing the slag mass ratio by 2:1 mass ratio also increased B removal efficiency by approximately 15–20% more than an increase by 1:1.

Purification of Metallurgical-Grade Silicon by Acid Leaching

Silicon ◽  
2018 ◽  
Vol 11 (4) ◽  
pp. 1979-1987 ◽  
Author(s):  
Farzad Ebrahimfar ◽  
Mahdi Ahmadian
Keyword(s):  
Acid Leaching ◽  
Metallurgical Grade Silicon ◽  
Grade Silicon

Purification of metallurgical-grade silicon via acid leaching, calcination and quenching before boron complexation

2013 ◽  
Vol 139 ◽  
pp. 64-72 ◽  
Author(s):  
Yan-Hui Sun ◽  
Qi-Hui Ye ◽  
Chang-Juan Guo ◽  
Hong-Yu Chen ◽  
Xu Lang ◽  
...  
Keyword(s):  
Acid Leaching ◽  
Metallurgical Grade Silicon ◽  
Grade Silicon

Reductive Removal of Phosphorus in Silicon Using CaO-CaF2 Slag

2013 ◽  
Vol 750 ◽  
pp. 284-287 ◽  
Author(s):  
Hiroaki Kawamura ◽  
Yutaka Yanaba ◽  
Takeshi Yoshikawa ◽  
Kazuki Morita
Keyword(s):  
Acid Leaching ◽  
Calcium Content ◽  
Molten Silicon ◽  
Metallurgical Grade Silicon ◽  
Slag Treatment ◽  
High Fraction ◽  
Wet Chemical ◽  
Grade Silicon ◽  
Removal Fraction ◽  
P Removal

In order to verify an alternative metallurgical process of phosphorus removal for solar grade silicon (SOG-Si), slag treatment of metallurgical grade silicon (MG-Si) was conducted followed by acid leaching in the present study. MG-Si containing certain amount of phosphorus and calcium was equilibrated at 1723 and 1773 K with several compositions of the CaO-CaF2 slags and phosphorus in molten silicon was confirmed to be removed into slag phase also by reducing reaction as a form of phosphide ion, P3-, in addition to the phosphate ion, PO43-. These contents were separately determined by a wet chemical analysis method developed by ourselves. Although the distribution ratio of phosphorus could not exceed the highest reported values of 3, subsequent leaching brought about considerably high fraction of P removal. The removal fraction of 95.6% was attained when 5 g of silicon was treated with 10 g of the slag at 1773 K followed by the acid leaching, which would be much higher than that expected by the ordinary oxidizing slag treatment. Although the possibility of reducing dephosphorization by slag treatment was clarified, more effective condition should be pursued by changing slag composition, calcium content of silicon, temperature, etc.

Purification of metallurgical grade silicon by acid leaching

1990 ◽  
Vol 23 (2-3) ◽  
pp. 237-246 ◽  
Author(s):  
I.C Santos ◽  
A.P Gonçalves ◽  
C.Silva Santos ◽  
M Almeida ◽  
M.H Afonso ◽  
...  
Keyword(s):  
Acid Leaching ◽  
Metallurgical Grade Silicon ◽  
Grade Silicon

Effect of Na2O-SiO2 Slag Treatment on Hydrometallurgical Purification of Metallurgical Grade Silicon

2013 ◽  
Vol 420 ◽  
pp. 139-143 ◽  
Author(s):  
M. Fang ◽  
C.H. Lu ◽  
H.X. Lai ◽  
L.Q. Huang ◽  
J. Chen ◽  
...  
Keyword(s):  
Comparative Analysis ◽  
Acid Corrosion ◽  
Intermetallic Phases ◽  
Leaching Behavior ◽  
Metallurgical Grade Silicon ◽  
Metal Impurities ◽  
Precipitated Phase ◽  
Slag Treatment ◽  
Corrosion Experiment ◽  
Grade Silicon

The effects of Na2O-SiO2slag treatment on purification of metallurgical grade silicon by leaching with hydrogen fluoride have been investigated. A comparative analysis of microstructure evolution was carried out to examine the leaching behavior of impurities from metallurgical grade silicon. It was found that the distribution of metal impurities Al, Ca, Ti and Na, which co-deposited with Si and formed different intermetallic phases at grain boundaries, had manifest distinction between precipitated phase and silicon. Moreover, acid corrosion experiment results revealed that slag treatment improved the dissolution rate of metal impurities from metallurgical grade silicon as contrasted to that without slag treatment.

Ca-Si Alloy Addition Followed by Acid Leaching as a Route to Solar-Grade Silicon

2014 ◽  
Vol 881-883 ◽  
pp. 1562-1567
Author(s):  
Peng Zou ◽  
Kui Xian Wei ◽  
Wen Hui Ma ◽  
Ke Qiang Xie ◽  
Ji Jun Wu ◽  
...  
Keyword(s):  
Phosphorus Content ◽  
Low Cost ◽  
Acid Leaching ◽  
Impurity Phase ◽  
Solar Grade Silicon ◽  
Metallurgical Grade Silicon ◽  
Before And After ◽  
Alloy Addition ◽  
Grade Silicon ◽  
Leaching Condition

In present, refining of metallurgical grade silicon is one of the promising routes to low-cost solar grade silicon for solar cells. Alloying with Ca has shown a great potential as efficient refining method of MG-Si in combination with acid leaching. Compared with Ca metal, Ca-Si alloy is cheaper and more secure. Great removal of impurity depends on microstructure of MG-Si after alloyed with Ca-Si alloy. In the work, the change of impurity phase which was performed by the change of the microstructure of MG-Si before and after alloyed with Ca-Si alloy has been analyzed. It was determined that CaSi2phase contained significant phosphorus content after alloying with Ca-Si alloy, It also investigated the optimal acid leaching condition after leaching, which confirmed that metallurgical grade silicon with Ca-Si alloy addition followed by acid leaching could be a potential route to remove phosphorus from MG-Si.

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