scholarly journals Atomic force microscopy analysis of alkali textured silicon substrates for solar cell applications

2018 ◽  
Vol 6 (1) ◽  
pp. 13
Author(s):  
Adebayo Fashina ◽  
Kenneth Adama ◽  
Lookman Abdullah ◽  
Chukwuemeka Ani ◽  
Oluwaseun Oyewole ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Light Trapping ◽  
Surface Texturing ◽  
Etching Time ◽  
Silicon Substrates ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis

In this paper, the surface morphology of textured silicon substrates is explored. Prior to the surface morphology analysis, textured silicon substrates were obtained by KOH anisotropic texturing of polished silicon wafers. This was achieved by investigating of the dependence surface texturing on the process parameters; etchant concentration, etching time and temperature. The surface morphology of the textured silicon samples was obtained using atomic force microscopy that was operated in the tapping mode. The resulting atomic force microscopy (AFM) images were analyzed using the Nanoscope and Gwyddion software packages. The AFM analysis revealed more surface details such as the depth, roughness, section, and step height analysis. The analysis was limited to a length scale of a few micrometers, which carefully reveals the number of individualities of the initial stages of pyramid growth. The average roughness was found to be 593nm for an optimally textured silicon wafer. The implications of the study are then discussed for potential light trapping application in silicon solar cells.

Atomic Force Microscopy Studies of Severely Deformed Amorphous TiNiCu Alloy

2018 ◽  
Vol 385 ◽  
pp. 200-205 ◽  
Author(s):  
Dmitriy Gunderov ◽  
Evgeniy Boltynjuk ◽  
Evgeniy Ubyivovk ◽  
Alexander Lukyanov ◽  
Anna Churakova ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Smooth Surface ◽  
High Pressure Torsion ◽  
Amorphous Structure ◽  
Average Roughness ◽  
Force Microscopy ◽  
Amorphous Ribbons ◽  
Atomic Force ◽  
Complex Transformation

The amorphous Ti50Ni25Cu25 alloy was subjected to high pressure torsion (HPT) processing. TEM studies revealed in the structure of the HPT-processed samples the presence of nanocrystals with a size of about 5 nm and amorphous clusters with a size of about 10-30 nm. Atomic force microscopy (AFM) was used to study the surface morphology of foils prepared by ion polishing from the initial amorphous ribbons and HPT-processed samples. AFM images of the foil prepared from the initial ribbon revealed a smooth surface with an average roughness of 0.3 nm. A totally different surface morphology was observed for the foil prepared from the HPT-processed state by the same regime of ion polishing: the presence of holes with a depth of 2-4 nm and a width of 10-30 nm. The changes in the surface morphology, namely the holes-like surface morphology of the HPT-processed state, could be explained by a complex transformation of the amorphous structure, and probably by the variation and redistribution of free volume, which leads to the emergence of a cluster contrast in TEM images.

scholarly journals Methods of preparation and temporal stability of GaSe and InSe nanolayers

2020 ◽  
pp. 50-54
Author(s):  
R.A. Redkin ◽  
◽  
D.A. Kobtsev ◽  
S.A. Bereznaya ◽  
Z.V. Korotchenko ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Temporal Stability ◽  
Silicon Substrates ◽  
Mechanical Exfoliation ◽  
Force Microscopy ◽  
Atomic Force

GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of obtained InSe and GaSe nanolayers were studied, as well as their temporal stability. The observed spectral positions of the Raman peaks were in agreement with the position of the peaks known for bulk and nanolayered InSe and GaSe samples

Surface morphology of As-deposited and laser-damaged dielectric mirror coatings studied in-situ by atomic force microscopy

1992 ◽  
Author(s):  
Mark R. Kozlowski ◽  
Michael C. Staggs ◽  
Mehdi Balooch ◽  
Robert J. Tench ◽  
Wigbert J. Siekhaus
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Dielectric Mirror ◽  
Atomic Force

Surface morphology studies on sublimation grown GaN by atomic force microscopy

1999 ◽  
Vol 200 (3-4) ◽  
pp. 348-352 ◽  
Author(s):  
R.S Qhalid Fareed ◽  
S Tottori ◽  
K Nishino ◽  
S Sakai
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Force Microscopy ◽  
Atomic Force

Chromic Polydiacetylene Single Crystals: Atomic Force Microscopy Studies

1995 ◽  
Vol 413 ◽  
Author(s):  
V. Shivshankar ◽  
C. Sung ◽  
J. Kumar ◽  
S. K. Tripathy ◽  
D. J. Sandman
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Single Crystals ◽  
Ambient Conditions ◽  
Free Standing ◽  
Force Microscopy ◽  
Sensor Performance ◽  
Atomic Force ◽  
Variable Surface

ABSTRACTWe have studied the surface morphology of free standing single crystals of thermochromic polydiacetylenes (PDAs), namely, ETCD and IPUDO (respectively, the ethyl and isopropyl urethanes of 5,7-dodecadiyn-1,12-diol), by Atomic Force Microscopy (AFM) under ambient conditions. Micron scale as well as molecularly resolved images were obtained. The micron scale images indicate a variable surface, and the molecularly resolved images show a well defined 2-D lattice that is interpreted in terms of molecular models and known crystallographic data. Thereby information about surface morphology, which is crucial to potential optical device or chromic sensor performance is available. We also report the observation of a “macroscopic shattering” of the IPUDO monomer crystal during in-situ UV polymerization studies.

MICROCRACKS IN ~ 100 MeV Si7+-ION-IRRADIATED p-SILICON SURFACES

2004 ◽  
Vol 11 (03) ◽  
pp. 265-269
Author(s):  
O. P. SINHA ◽  
P. C. SRIVASTAVA ◽  
V. GANESAN
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Target Surface ◽  
Silicon Surfaces ◽  
Force Microscopy ◽  
Atomic Force ◽  
Induced Stress

The p-silicon surfaces have been irradiated with ~ 100 MeV Si 7+ions to a fluence of 2.2×1013 ions cm -2, and surface morphology has been studied with atomic force microscopy (AFM). Interesting features of cracks of ~ 47 nm in depth and ~ 103 nm in width on the irradiated surfaces have been observed. The observed features seemed to have been caused by the irradiation-induced stress in the irradiated regions of the target surface.

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