High-performance UV detectors are of great significance for various applications. Plasmonic structures enable great improvement of the performance of detectors. However, to push the plasmonic enhancement to photo response into the deep-UV region presents some challenges. In this work, we found that the optical properties of the supporting layer play important roles in achieving the optimal plasmonic enhancement. Therefore, we fully considered the dependence of the optical constants of the MgZnO supporting layer, which is a promising material to realize deep-UV photodetectors, on microstructure and crystalline quality, which are related to the fabrication method. Based on the optical constants, we designed an Al mesh plasmonic structure and fabricated it with a polystyrene monolayer as a mask. Finally, we demonstrated a three-times enhancement to photo response with UV radiation at 254 nm.
Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors
