Performance analysis of wavelength division multiplexing MDM-PON system using different advanced modulations

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Jashanpreet Singh ◽  
Karamjit Kaur

Abstract Mode division multiplexing (MDM) is very competent next generation multiplexing technique and is becoming popular among researchers these days. In this research article, an integrated passive optical network (PON) using MDM and wavelength division multiplexing (WDM) is proposed at 25 Gbps over 3 km multimode fiber (MMF) link distance. For MDM, diverse Laguerre–Gaussian (LG) such as LG12, LG15, LG18, LG111 and LG114 are incorporated and also for cost reduction, vertical cavity surface emitting laser (VCSEL) is located in optical line terminal (OLT). Performance of diverse advanced modulations such as compressed spectrum return to zero (CSRZ), duo-binary return to zero (DRZ) and modified duo-binary return to zero (MDRZ) is evaluated and compared with non-return to zero (NRZ) in terms of Bit error rate (BER) at varied MMF link lengths. Results revealed that CSRZ performance stand out and NRZ provide worst performance.

2013 ◽  
Vol 25 (12) ◽  
pp. 1111-1113 ◽  
Author(s):  
Corrado Sciancalepore ◽  
Badhise Ben Bakir ◽  
Sylvie Menezo ◽  
Xavier Letartre ◽  
Damien Bordel ◽  
...  

1994 ◽  
Vol 05 (04) ◽  
pp. 569-592
Author(s):  
C.J. CHANG-HASNAIN ◽  
Y.A. WU ◽  
L.E. ENG ◽  
G.S. LI

The capability to fabricate two-dimensional (2D) semiconductor diode laser array is one of the most important steps towards making wafer-scale low-cost lasers. The recent emergence of vertical cavity surface emitting laser (VCSEL) facilitates the fabrication of such large 2D arrays. In this paper, we review the recent progress on a novel largeaperture single-mode VCSEL and a 2D multiple-wavelength VCSEL array for ultra-high bandwidth applications. We demonstrate a passive antiguide region (PAR) VCSEL which emits a stable single mode with very low threshold, a large aperture, and a fixed polarization. We also demonstrate multi-wavelength VCSEL arrays with repeatable wavelength spans over 20 nm, grown by Molecular Beam Epitaxy. The wavelength shift is achieved by varying the GaAs growth rate across the wafer using a patterned backing wafer to induce a temperature profile. Such multiple wavelength laser arrays are promising for ultrahigh bandwidth optical transmission and switching systems using wavelength division multiplexing (WDM).


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