scholarly journals Electrical properties and Mott parameters of polycrystalline diamond films synthesized by HF CVD method from hydrogen/methanol gas mixture

2018 ◽  
Vol 35 (4) ◽  
pp. 830-837 ◽  
Author(s):  
Agnieszka Banaszak-Piechowska ◽  
Kazimierz Fabisiak ◽  
Elżbieta Staryga ◽  
Kazimierz Paprocki
Keyword(s):  
Charge Transport ◽  
Synthetic Diamond ◽  
Electronic Conductivity ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Temperature Dependent ◽  
Cvd Method ◽  
Crystallite Sizes ◽  
Hot Filament

Abstract The influence of diamond crystallinity and preferred orientation on electronic conductivity of synthetic diamond films grown by hot filament chemical vapor deposition (HFCVD) was investigated. The CVD diamond films of different morphologies and crystallite sizes varying from 36 nm to 67 nm, measured in h2 2 0i direction were considered. The charge transport mechanism in the diamond samples was studied using temperature dependent DC conductivity measurements. The obtained results showed that in the temperature range of 90 K to 300 K charge transport is realized via Variable Range Hopping (VRH, m = 1/4) mechanism. Using VRH model, the Mott parameters were evaluated i.e. density of states at Fermi level N(EF) (0.22 × 1015 eV-1·cm-3 to 1.7 × 1015 eV-1·cm-3), hopping energy W (43.5 meV to 142.3 meV) and average hopping distance R (1.49 × 10-5cm to 2.56 × 10-5cm). It was shown that above mentioned parameters strongly depend on diamond film preferential orientation.

scholarly journals The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6615
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska ◽  
...  
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Point Of View ◽  
Hydrogen Passivation ◽  
Temperature Dependent ◽  
Current Voltage ◽  
P Type ◽  
Hot Filament

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.

Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition

1990 ◽  
Vol 5 (11) ◽  
pp. 2483-2489 ◽  
Author(s):  
K. Tankala ◽  
T. DebRoy ◽  
M. Alam
Keyword(s):  
Microwave Plasma ◽  
Synthetic Diamond ◽  
Natural Diamond ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Low Oxygen ◽  
Before And After ◽  
Lower Temperature ◽  
Hot Filament

Oxidation of polycrystalline diamond films on (111) Si wafers in air at temperatures up to 1073 K was investigated by thermogravimetry. The diamond films before and after partial oxidation were characterized by optical and scanning electron microscopy, x-ray, infrared, and Raman spectroscopy. The oxidation of synthetic diamond films started at a lower temperature than that for natural diamond. The rates of oxidation of the diamond films synthesized by the hot filament and the microwave plasma methods were intermediate between the rates of oxidation of the 111 and 100 planes of natural diamond crystals. The apparent activation energy for the oxidation of the synthetic diamond films agreed well with that for the oxidation of natural diamond via diamond to graphite transition at low oxygen pressures.

Examination of the material properties and performance of thin-diamond film cutting tool inserts produced by arc-jet and hot filament chemical vapor deposition

1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor Deposition ◽  
Diamond Film ◽  
Vapor Deposition ◽  
Cutting Tool ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
And Performance ◽  
Hot Filament

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.

Characterization of undoped and boron-doped polycrystalline diamond films synthesized by hot-filament chemical vapor deposition using methanol

1994 ◽  
Vol 3 (4-6) ◽  
pp. 618-622 ◽  
Author(s):  
Takashi Sugino ◽  
Kiyoshi Karasutani ◽  
Fumihiro Mano ◽  
Hiroya Kataoka ◽  
Junji Shirafuji ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Boron Doped ◽  
Hot Filament

scholarly journals Polycrystalline Diamond Films produced by Hot-Filament Chemical Vapor Deposition

2017 ◽  
Vol 23 (S1) ◽  
pp. 2272-2273 ◽  
Author(s):  
M.J. Arellano-Jimenez ◽  
J. J. Alcantar-Peña ◽  
J.E. Ortega Aguilar ◽  
M.J. Yacaman ◽  
O. Auciello
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Hot Filament

Novel Time-modulated Chemical Vapor Deposition Process for Growing Diamond Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1563-1566 ◽  
Author(s):  
Q. H. Fan ◽  
N. Ali ◽  
Y. Kousar ◽  
W. Ahmed ◽  
J. Gracio
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Film Growth ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Deposition Process ◽  
Cvd Method ◽  
Control Film ◽  
Hydrocarbon Gas

Smooth polycrystalline diamond films were deposited onto silicon substrates using a newly developed time-modulated chemical vapor deposition (TMCVD) process. The distinctive feature of the TMCVD process involves pulsing the hydrocarbon gas, methane, at different flow rates for varying durations into the vacuum reactor during the chemical vapor deposition (CVD) process. Generally, CVD diamond films display nonuniformity in the crystal sizes and surface roughness along the film growth profile. The TMCVD method was specifically developed to (i) deposit smooth films, (ii) control film microstructure and morphology, and (iii) improve film reliability. We show that the TMCVD process produces diamond films with improved surface smoothness as compared to films of similar thickness produced by conventional CVD method under similar conditions. Surprisingly perhaps, the TMCVD method gave growth rates much higher than the conventional CVD method without reducing the film quality as revealed by the SEM micrographs and micro-Raman spectra.

Effects of Methane Concentration and Hydrogen Treatment on Preferred Orientation in Diamond Films Grown by Chemical Vapor Deposition

1994 ◽  
Vol 339 ◽  
Author(s):  
D. Ganesan ◽  
S. C. Sharma
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Preferred Orientation ◽  
Hydrogen Treatment ◽  
X Ray Diffraction ◽  
Diamond Peak ◽  
Hot Filament

ABSTRACTWe have conducted x-ray diffraction, Raman spectroscopy, and scanning electron microscopy analyses of diamond films grown by hot filament assisted chemical vapor deposition (HFCVD). We present results on the relative abundance of the (111), (220) and (400) faces in polycrystalline diamond films as functions of CH4 concentration. The intensity of the (111) peak can be varied from about 20% to 60% by adjusting CH4 in CH4/H2 mixtures. We also present results on preferred orientation in films grown under varying hydrogen treatments. We discuss correlations between the preferred orientation, FWHM of the diamond peak in the Raman spectrum, and surface morphology of the films.

Sign in / Sign up

Export Citation Format

Share Document