Solution-processed and High-performance Ionic-paper Gated Field-effect Transistors from Two-dimensional Layered Semiconductor Nanosheets for High Thermal Resolution

2022 ◽  
Author(s):  
Guokeng Liu ◽  
Chunyang Jin ◽  
Binlai Hu ◽  
Lihua Zhang ◽  
Guozheng Zeng ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Building Blocks ◽  
Two Dimensional ◽  
Layered Semiconductor ◽  
Solution Processed ◽  
Scalable Production

The remarkable properties of layered semiconductor nanosheets (LSNs), such as scalable production, bandgap tunability and mechanical flexibility have promoted them as promising building blocks for nanoelectronics and bioelectronics. However, it...

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

Graphene as an electrode for solution-processed electron-transporting organic transistors

Nanoscale ◽  
2017 ◽  
Vol 9 (29) ◽  
pp. 10178-10185 ◽  
Author(s):  
Subir Parui ◽  
Mário Ribeiro ◽  
Ainhoa Atxabal ◽  
Roger Llopis ◽  
Fèlix Casanova ◽  
...  
Keyword(s):  
Organic Electronics ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

High-performance lateral and vertical organic field-effect transistors are demonstrated based on graphene electrodes and solution-processed N2200 polymers for advanced organic-electronics.

High-performance n-channel field effect transistors based on solution-processed dicyanomethylene-substituted tetrathienoquinoid

RSC Advances ◽  
2014 ◽  
Vol 4 (33) ◽  
pp. 16939-16943 ◽  
Author(s):  
Qinghe Wu ◽  
Xiaolan Qiao ◽  
Qiuliu Huang ◽  
Jie Li ◽  
Yu Xiong ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Molecular Packing ◽  
Solution Processed ◽  
Solution Processable

A solution-processable tetrathienoquinoidal semiconductorCMHTwas synthesized and characterized, and the correlation between the molecular packing of theCMTHand transistor performance was studied.

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

2015 ◽  
Vol 3 (31) ◽  
pp. 8024-8029 ◽  
Author(s):  
Zhaoguang Li ◽  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Lei Guo ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Building Blocks ◽  
Organic Field Effect Transistors ◽  
Next Generation

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives exhibiting a hole mobility of up to 0.25 cm2 V−1 s−1 show promise as useful building blocks to construct next-generation high performance organic semiconductors.

Correction to High-Performance Field Effect Transistors from Solution Processed Carbon Nanotubes

ACS Nano ◽  
2011 ◽  
Vol 5 (4) ◽  
pp. 3400-3400
Author(s):  
Huiliang Wang ◽  
Jun Luo ◽  
Alex Robertson ◽  
Yasuhiro Ito ◽  
Wenjing Yan ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Solution Processed

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

Sign in / Sign up

Export Citation Format

Share Document