Broadband high-efficiency near-infrared graphene phase modulators enabled by metal–nanoribbon integrated hybrid plasmonic waveguides

Abstract The phase modulator is a key component in optical communications for its phase modulation functions. In this paper, we numerically demonstrate a variety of ultra-compact high-efficiency graphene phase modulators (GPMs) based on metal–nanoribbon integrated hybrid plasmonic waveguides in the near-infrared region. Benefiting from the good in-plane mode polarization matching and strong hybrid surface plasmon polariton and graphene interaction, the 20 μm-length GPM can achieve excellent phase modulation performance with a good phase and amplitude decoupling effect, a low insertion loss around 0.3 dB/μm, a high modulation efficiency with V π L π of 118.67 V μm at 1.55 μm, which is 1–3 orders improvement compared to the state-of-the-art graphene modulators. Furthermore, it has a wide modulation bandwidth of 67.96 GHz, a low energy consumption of 157.49 fJ/bit, and a wide operating wavelength ranging from 1.3 to 1.8 μm. By reducing the overlap width of the graphene–Al2O3–graphene capacitor, the modulation bandwidth and energy consumption of the modulator can be further improved to 370.36 GHz and 30.22 fJ/bit, respectively. These compact and energy-efficient GPMs may hold a key to various high-speed telecommunications, interconnects, and other graphene-based integrated photonics applications.

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Broadband graphene-on-silicon modulator with orthogonal hybrid plasmonic waveguides

Nanophotonics ◽

10.1515/nanoph-2020-0165 ◽

2020 ◽

Vol 9 (6) ◽

pp. 1529-1538

Author(s):

Mingyang Su ◽

Bo Yang ◽

Junmin Liu ◽

Huapeng Ye ◽

Xinxing Zhou ◽

...

Keyword(s):

Energy Consumption ◽

Near Infrared ◽

Modulation Depth ◽

High Energy ◽

Plasmonic Waveguides ◽

Optical Fields ◽

Photoelectric Properties ◽

Hybrid Plasmonic Waveguides ◽

On Chip ◽

Silicon Modulator

AbstractGraphene, a two-dimensional nanomaterial, possess unique photoelectric properties that have potential application in designing optoelectronic devices. The tunable optical absorption is one of the most exciting properties that can be used to improve the performance of silicon modulators. However, the weak light–matter interaction caused by the size mismatch between the optical mode fields and graphene makes the graphene-on-silicon modulator (GOSM) has large footprint and high energy consumption, limiting the enhancement of modulation efficiency. Here, we propose a broadband GOSM with orthogonal hybrid plasmonic waveguides (HPWs) at near-infrared wavelengths. The orthogonal HPWs are designed to compress the interaction region of optical fields and enhance the light-graphene interaction. The results show that the GOSM has a modulation depth of 26.20 dB/μm, a footprint of 0.33 μm2, a 3 dB modulation bandwidth of 462.77 GHz, and energy consumption of 2.82 fJ/bit at 1.55 μm. Even working at a broad wavelength band ranging from 1.3 to 2 μm, the GOSM also has a modulation depth of over 8.58 dB/μm and energy consumption of below 4.97 fJ/bit. It is anticipated that with the excellent modulation performance, this GOSM may have great potential in broadband integrated modulators, on-chip optical communications and interconnects, etc.

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Fast speed switching response and high modulation signal processing bandwidth through LiNbO3 electro-optic modulators

Journal of Optical Communications ◽

10.1515/joc-2020-0012 ◽

2020 ◽

Vol 0 (0) ◽

Author(s):

Mahmoud M. A. Eid ◽

Ahmed Nabih Zaki Rashed ◽

Iraj S. Amiri

Keyword(s):

Near Infrared ◽

Infrared Region ◽

Modulation Bandwidth ◽

Fast Speed ◽

Electrooptic Modulators ◽

High Modulation ◽

Data Rates ◽

Electro Optic ◽

Modulation Signal ◽

Speed Response

AbstractThis work outlined the fast speed response and high modulation bandwidth through LiNbO3 electro-optic modulators. The refractive index is analyzed to estimate the switching voltage and modulation bandwidth for these modulators. The modulation voltage and data transmission data rates are analyzed and discussed clearly through LiNbO3 electro-optic modulators. The modulator’s performance efficiency is upgraded with the optimum modulator length of 10 mm and its thickness of 2 mm. The proposed modulators are compared with GaAs electrooptic modulators under various electro-optic modulators dimensions at 1300 nm near-infrared region and room temperature.

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Polymer colour converter with very high modulation bandwidth for visible light communications

Journal of Materials Chemistry C ◽

10.1039/c7tc03787b ◽

2017 ◽

Vol 5 (35) ◽

pp. 8916-8920 ◽

Cited By ~ 7

Author(s):

D. A. Vithanage ◽

A. L. Kanibolotsky ◽

S. Rajbhandari ◽

P. P. Manousiadis ◽

M. T. Sajjad ◽

...

Keyword(s):

Visible Light ◽

High Speed ◽

Visible Light Communication ◽

Modulation Bandwidth ◽

Visible Light Communications ◽

Semiconducting Polymer ◽

High Modulation ◽

Very High

We report the synthesis, photophysics and application of a novel semiconducting polymer as a colour converter for high speed visible light communication.

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1.55 μm High Speed Partly Gain-Coupled DFB Lasers with Periodically Etched Strained-Layer Quantum Wells

International Journal of High Speed Electronics and Systems ◽

10.1142/s0129156497000172 ◽

1997 ◽

Vol 08 (03) ◽

pp. 475-494 ◽

Cited By ~ 2

Author(s):

Toshihiko Makino

Keyword(s):

Quantum Wells ◽

High Speed ◽

Carrier Transport ◽

Stop Band ◽

Longitudinal Distribution ◽

Modulation Bandwidth ◽

Carrier Injection ◽

Strained Layer ◽

High Modulation ◽

Dfb Laser

The high speed performance of partly gain-coupled (GC) DFB lasers consisting of periodically etched strained-layer quantum wells (QW's) is reviewed with comparisons to the equivalent index-coupled (IC) DFB lasers with the same active layers. It is shown that the GC DFB laser has a –3 dB modulation bandwidth of 22 GHz at 10 mW with a stable single mode oscillation at the longer side of the Bragg Stop-band due to in-phase gain coupling. A theoretical analysis is also presented based on the local-normal-mode transfer-matrix laser model which takes into account both the longitudinal distribution of laser parameters and carrier transport effects. The mechanism for high modulation bandwidth of the GC DFB laser is attributed to a higher differential gain due to a reduced carrier transport time which is provided by an effecient carrier injection from the longitudinal etched interface of the QW's.

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A High Modulation Bandwidth, 110 GHz Power-DAC Cell for IQ Transmitter Arrays With Direct Amplitude and Phase Modulation

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2014.2327216 ◽

2014 ◽

Vol 49 (10) ◽

pp. 2103-2113 ◽

Cited By ~ 9

Author(s):

Andreea Balteanu ◽

Stefan Shopov ◽

Sorin P. Voinigescu

Keyword(s):

Phase Modulation ◽

Modulation Bandwidth ◽

High Modulation

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Materials Development for High Efficiency Superconducting Nanowire Single-Photon Detectors

MRS Proceedings ◽

10.1557/opl.2015.544 ◽

2015 ◽

Vol 1807 ◽

pp. 1-6 ◽

Cited By ~ 5

Author(s):

A.E. Lita ◽

V.B. Verma ◽

R. D. Horansky ◽

J.M. Shainline ◽

R.P. Mirin ◽

...

Keyword(s):

Thin Films ◽

High Speed ◽

Near Infrared ◽

High Efficiency ◽

Single Photon ◽

Amorphous Material ◽

Superconducting Transition ◽

Photon Detectors ◽

Single Photon Detectors ◽

Superconducting Nanowire

ABSTRACTSuperconducting nanowire single-photon detectors (SNSPDs) based on ultra-thin films have become the preferred technology for applications that require high efficiency single-photon detectors with high speed, high timing resolution, and low dark count rates at near-infrared wavelengths. Since demonstration of the first SNSPD using NbN thin films, an increasingly larger number of materials are being explored. We investigate amorphous thin film alloys of MoSi, MoGe, and WRe with the goal of optimizing SNSPDs for higher operating temperature, high efficiency and high speed. To explore material adequacy for SNSPDs, we have measured superconducting transition temperature (Tc) as a function of film thickness and sheet resistance, as well as critical current densities. In this paper we present our results comparing these materials to WSi, another amorphous material widely used for SNSPD devices.

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