Study of the spatial distribution of minority carrier diffusion length in epiplanar detector structures
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AbstractOne of the key parameters determining detection properties of silicon PIN detector structures (pThe paper presents a method for measuring the spatial distribution of effective carrier diffusion length in silicon detector structures, based on the measurement of photoelectric current of a non-polarised structure illuminated (spot diameter of 250 μm) with monochromatic radiation of two wavelengths λ
1990 ◽
Vol 48
(4)
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pp. 744-745
1982 ◽
Vol 21
(Part 2, No. 9)
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pp. L558-L560
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1988 ◽
Vol 33-34
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pp. 1044-1050
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2009 ◽
pp. 125-125-20
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