Untersuchungen zur Auftreffwinkelabhängigkeit des Emissionskoeffizienten für Sekundärelektronen und der Zerstäubungsausbeute beim Ionenbeschuß zylindrischer Proben im Plasma / Investigation of the Angular Dependence of the Secondary Electron Emission Coefficient and the Sputtering Yield by Ion Bombardment of Cylindrical Targets in a Plasma

1969 ◽  
Vol 24 (12) ◽  
pp. 1908-1914
Author(s):  
H Oechsner ◽  
W Gesang
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Solid Surfaces ◽  
Angle Of Incidence ◽  
Emission Coefficient ◽  
Secondary Electron Emission Coefficient ◽  
Cylindrical Target ◽  
Sputtering Yield ◽  
Low Energy Ions

The influence of the angle of incidence of low energy ions on the emission of secondary particles from solid surfaces can be investigated by using cylindrical targets in a low pressure plasma. It is shown that the distribution of the angle of incidence of the impinging ions becomes independent of plasma conditions and bombarding parameters, when the diameter of the Langmuir sheath around the target is sufficiently large compared with that of the cylindrical target. Experimental results on the influence of the angle of ion incidence on the secondary electron emission coefficient and the sputtering yield are reported for polycrystalline Mo bombarded with A+-ions from 300 to 900 eV.

scholarly journals CRYSTALLOGRAPHIC ORIENTATION INFLUENCE ON SECONDARY ELECTRON EMISSION COEFFICIENT OF A SINGLE CRYSTAL OF SYNTHETIC DIAMOND

2018 ◽  
Vol 59 (8) ◽  
pp. 21
Author(s):  
Vladimir Yu. Sadovoy ◽  
Vladimir D. Blank ◽  
Sergey A. Terentiev ◽  
Dmitriy V. Teteruk ◽  
Sergey Yu. Troschiev
Keyword(s):  
Single Crystal ◽  
Electron Emission ◽  
Crystallographic Orientation ◽  
Beam Energy ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Beam ◽  
Emission Coefficient ◽  
Secondary Electron Emission Coefficient ◽  
Single Crystal Diamond

Dependence of secondary electron emission coefficient on the chosen crystallographic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with energy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the direction (100), cubic sector, and also in intergrowth area that is confirmed by a picture of distribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope. The results for (100) area are outstanding: 8.18 at primary beam energy of 7 keV, 10.13 at 10 keV, 49.78 at 30 keV. The results for intergrowth area are similar: 10.10 at primary beam energy of 7 keV, 13.56 at 10 keV, 64.41 at 30 keV. The crystallographic directions (111) have shown secondary electron emission coefficient 4-6 times lower in comparison with (100) and intergrowth area: 2.54 on the average at primary beam energy of 7 keV, 2.75 at 10 keV, 10.03 at 30 keV. The non-standard behavior of secondary electron emission coefficient at the high energy primary beam for all orientations of single crystal diamond is shown: increase in secondary electron emission coefficient with increase in energy of primary beam. At the moment the reason of such behavior is not clear up to the end and since this fact causes a great interest of researchers, considerably expands applicability of the existing devices and detectors due to replacement of a functional element on diamond one, and also opens big opportunities for formation of new field of microelectronics, this facts demand further in-depth study by means of various methods of the structural and surface analysis.

Secondary electron emission coefficient of metal doping W-base alloy cathode

2014 ◽  
Vol 26 (12) ◽  
pp. 123006
Author(s):  
漆世锴 Qi Shikai ◽  
王小霞 Wang Xiaoxia ◽  
罗积润 Luo Jirun ◽  
赵世柯 Zhao Shike ◽  
李云 Li Yun ◽  
...  
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Base Alloy ◽  
Secondary Electron Emission ◽  
Emission Coefficient ◽  
Metal Doping ◽  
Secondary Electron Emission Coefficient

Preparation of MgO and mechanism analysis of secondary electron emission coefficient

2017 ◽  
Vol 32 (6) ◽  
pp. 467-473
Author(s):  
韦海成 WEI Hai-cheng ◽  
许亚杰 XU Ya-jie ◽  
肖明霞 XIAO Ming-xia ◽  
吉文欣 JI Wen-xin
Keyword(s):  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Mechanism Analysis ◽  
Emission Coefficient ◽  
Secondary Electron Emission Coefficient
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