X-Ray Interferometry of Volume Changes in C+Implanted Silicon
1973 ◽
Vol 28
(5)
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pp. 654-656b
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Keyword(s):
High energy C+ implantation is used to construct a two crystal monolithic X-ray interferometer. The X-ray interferometer technique is applied to in-situ studies of radiation damage annealing in the interferometer. Volume changes in the crystal due to the transformation of single crystal silicon to amorphous silicon and due to the formation of silicon carbide are measured.
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Keyword(s):
1990 ◽
Vol 137
(3)
◽
pp. 854-858
◽
Keyword(s):
2010 ◽
Vol 645-648
◽
pp. 239-242
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2021 ◽
Vol 1165
◽
pp. 113-130
Keyword(s):
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