Polycapillary Optics for in Situ Diagnostics

1997 ◽  
Vol 502 ◽  
Author(s):  
F. A. Hofmann ◽  
N. Gao ◽  
S. M. Owens ◽  
W. M. Gibson ◽  
C. A. Macdonald ◽  
...  
Keyword(s):  
Measurement Techniques ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Ex Situ ◽  
Glass Capillary ◽  
Accurate Analysis ◽  
Crystal Silicon ◽  
Polycapillary Optics ◽  
X Ray

ABSTRACTPolycapillary optics, shaped arrays consisting of hundreds of thousands of hollow glass capillary tubes, are used to redirect, collimate, or focus x-ray beams from conventional laboratory-based sources. Focused spot sizes as small as 20μm have been measured, with flux densities two orders of magnitude larger than that produced by pinhole or crossed slit collimation. Such flux increases have made possible faster and more sensitive x-ray fluorescence (XRF) and diffraction measurements to the extent that in situ measurements become possible. XRF data taken with a 12 W source were comparable to data taken with a 1.5 kW source. Ex situ diffraction and texture measurements on thin multilayered films and single crystal silicon demonstrate the tremendous experimental and analytical improvements made possible by polycapillary optics.With 0.5° and 2° focusing polycapillary x-ray optics, diffraction intensity gains of more than two orders of magnitude were measured on small Lysozyme protein crystals with exposure times an order of magnitude less than required by traditional measurement techniquesIn addition, the optics greatly reduce the background high energy Bremsstrahlung, permitting more accurate analysis of thin complex multilayer diffraction peaks. Rapid measurement times resulting from the application of these polycapillary optics, indicate tremendous possibilities for in situ process monitoring

scholarly journals X-Ray Interferometry of Volume Changes in C+Implanted Silicon

1973 ◽  
Vol 28 (5) ◽  
pp. 654-656b ◽  
Author(s):  
G. H. Schwuttke ◽  
K. Brack
Keyword(s):  
Silicon Carbide ◽  
Single Crystal ◽  
Amorphous Silicon ◽  
Radiation Damage ◽  
Single Crystal Silicon ◽  
High Energy ◽  
Volume Changes ◽  
Crystal Silicon ◽  
X Ray

High energy C+ implantation is used to construct a two crystal monolithic X-ray interferometer. The X-ray interferometer technique is applied to in-situ studies of radiation damage annealing in the interferometer. Volume changes in the crystal due to the transformation of single crystal silicon to amorphous silicon and due to the formation of silicon carbide are measured.

scholarly journals In Situ Materials Characterization across Atomic and Microstructure Lengthscales

2014 ◽  
Vol 70 (a1) ◽  
pp. C1072-C1072
Author(s):  
Fan Zhang ◽  
Andrew Allen ◽  
Lyle Levine ◽  
Gabrielle Long ◽  
Jan Ilavsky ◽  
...  
Keyword(s):  
Small Angle ◽  
Measurement Techniques ◽  
High Energy ◽  
Operating Conditions ◽  
Ex Situ ◽  
Material Research ◽  
X Ray ◽  
X Ray Scattering ◽  
Ray Scattering

Advanced materials exhibit complex, hierarchical, and multiscale microstructures that control their performance. Today, optimization of these microstructures requires iterative, ex situ studies using multiple independent instruments with different samples. To address many of the grand challenges facing the material research community, it is desirable to correlate material performance under realistic processing and operating conditions with in situ characterization of material structures across atomic and microstructural length scales. To meet this need, we have made progress in recent years in developing a suite of materials-measurement techniques that combines ultra-small angle X-ray scattering, small-angle X-ray scattering, X-ray diffraction, X-ray photon correlation spectroscopy, and X-ray imaging. When making use of high energy x rays from a third generation synchrotron source, this combined suite of techniques not only enables investigation of thick, complex materials under real operating/ processing conditions, but also allows robust structural characterization over 7 decades of structural and microstructural feature sizes, from sub-angstrom to millimeters. Depending on the scattering characteristics of the material, it can cover an unprecedented 11 decades in scattering intensity. This arrangement also allows the combination of measurement techniques be determined solely by the user's needs, allowing an unparalleled flexibility in addressing any set of microstructure, structure and dynamics material-measurement requirements. In this presentation, we will focus on various considerations required to make this combined technique possible, and use data from a series of in situ studies of aluminum alloys as examples to demonstrate the unique capability of this instrument. We will also discuss the potential impact that multi-bend achromat lattice, a concept being embraced by the worldwide synchrotron community, has on this technique.

PHASE FORMATION AND TEXTURE DEVELOPMENT IN AG-SHEATHED Bi, Pb(2223) TAPES STUDIED BY DIFFERENT IN-SITU AND EX-SITU DIFFRACTION TECHNIQUES

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2688-2693 ◽  
Author(s):  
E. GIANNINI ◽  
E. BELLINGERI ◽  
F. MARTI ◽  
M. DHALLÉ ◽  
V. HONKIMÄKI ◽  
...  
Keyword(s):  
High Energy ◽  
Texture Development ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Geometry ◽  
Reflection Geometry ◽  
Comparison Of The Results ◽  
In Situ Neutron Diffraction

In-situ and ex-situ high energy (80÷88 keV) X-Ray diffraction from a synchrotron radiation source were performed on multifilamentary Bi, Pb(2223)/Ag tapes using a transmission scattering geometry. Several thermo-mechanical procedures were compared, focusing mainly on the texture development of both Bi, Pb(2212) and Bi, Pb(2223) phases. The effect of the periodic pressing on the texture and on the critical current is elucidated. The texture development of the Bi, Pb(2212) phase prior to its transformation into Bi, Pb(2223) was directly observed in-situ at high temperature by using a dedicated high-energy X-ray compatible furnace and a high resolution Image Plate detector. A sharp increase of the Bi, Pb(2212) grain orientation along the [00l] direction was found to occur only above 750°C. Normal state transport measurements are in full agreement with the formation mechanism and with the texture development observed. A comparison of the results with the ones provided by in-situ neutron diffraction and standard low-energy XRD in a reflection geometry is presented.

Effects of Phosphorus Exposure on Arsenic-Stabilized GaAs 2×4 Surface

1993 ◽  
Vol 312 ◽  
Author(s):  
A. H. Bensaoula ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
V. Rossignol
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Growth Process ◽  
High Energy ◽  
Ex Situ ◽  
Chemical Beam Epitaxy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray

AbstractPhosphorus exposed GaAs (100) surfaces during a Chemical Beam Epitaxy growth process are studied using in-situ Reflection High Energy Electron Diffraction and ex-situ High Resolution X-ray Diffraction. It is shown that the phosphorus exposure of a GaAs (100) surface in the 500 – 580 °C temperature range results in the formation of one GaP monolayer.

Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)

2006 ◽  
Vol 527-529 ◽  
pp. 1075-1078 ◽  
Author(s):  
Carey M. Tanner ◽  
Jun Lu ◽  
Hans Olof Blom ◽  
Jane P. Chang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Field Effect Transistors ◽  
High Energy ◽  
Oxide Semiconductor ◽  
Ex Situ ◽  
Morphological Properties ◽  
Layer By Layer ◽  
Island Growth ◽  
X Ray

The material properties of HfO2 thin films were studied to evaluate their potential as a high-κ gate dielectric in 4H-SiC power metal-oxide-semiconductor field effect transistors. Stoichiometric HfO2 films were deposited on n-type 4H-SiC (0001) by atomic layer deposition (ALD) at substrate temperatures of 250-450°C. No significant interfacial layer formation was observed by in-situ X-ray photoelectron spectroscopy (XPS) and an abrupt interface was confirmed by high-resolution transmission electron microscopy (HRTEM). A temperature-dependent transition from amorphous layer-by-layer growth to crystalline three-dimensional island growth was identified by in-situ reflection high-energy electron diffraction (RHEED) and ex-situ atomic force microscopy (AFM). X-ray diffraction (XRD) confirmed the presence of monoclinic HfO2 domains in crystallized films.

Dependence of Crystallographic Texture of C54 Tisi2 on Thickness and Linewidth In Submicron Cmos Structures

1996 ◽  
Vol 427 ◽  
Author(s):  
V. Svilan ◽  
K. P. Rodbell ◽  
L. A. Clevenger ◽  
C. Cabral ◽  
R. A. Roy ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
The One ◽  
Oriented Parallel ◽  
Preferential Crystal Orientation ◽  
Line Direction

AbstractPreferential crystal orientation of low-resistance C54 TiSi2 formed in the reaction of polycrystalline and single crystal silicon with titanium was investigated for Ti thicknesses ranging from 15 to 44 nm. Using in situ synchrotron x-ray diffraction during heating of 15 nm of Ti on single crystal Si, we observed that the C54 TiSi2 silicide film showed predominantly <040> grains oriented normal to the sample. In thicker silicide films the <311> orientation dominated or film was randomly oriented. An ex situ four circle diffractometer was used to investigate the strong <040> texture in narrow line arrays of C54-TiSi2 formed on polycrystalline silicon with linewidths from 0.2 to 1.1 μm. We observed that the angular distribution of <040> Ti Si2 grains is dependent on the line direction, where the majority of grains had their (100) planes oriented parallel with the line direction. These findings support a model of the C49 to C54 TiSi2 transformation involving rapid growth of certain orientations favored by the one-dimensional geometry imposed by narrow lines.

Recrystallization and phase transitions in a γ-TiAl-based alloy as observed by ex situ and in situ high-energy X-ray diffraction

2006 ◽  
Vol 54 (14) ◽  
pp. 3721-3735 ◽  
Author(s):  
Klaus-Dieter Liss ◽  
Arno Bartels ◽  
Helmut Clemens ◽  
Slawomir Bystrzanowski ◽  
Andreas Stark ◽  
...  
Keyword(s):  
Phase Transitions ◽  
High Energy ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray

Oxygen Vacancies at the γ-Al2O3/STO Heterointerface Grown by Atomic Layer Deposition

2015 ◽  
Vol 1730 ◽  
Author(s):  
Thong Q. Ngo ◽  
Martin D. McDaniel ◽  
Agham Posadas ◽  
Alexander A. Demkov ◽  
John G. Ekerdt
Keyword(s):  
Atomic Layer Deposition ◽  
Photoelectron Spectroscopy ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
High Energy ◽  
Ex Situ ◽  
X Ray ◽  
Layer Deposition ◽  
Dimensional Electron Gas

ABSTRACTWe report the epitaxial growth of γ-Al2O3 on SrTiO3 (STO) substrates by atomic layer deposition (ALD). The ALD growth of γ-Al2O3 on STO(001) single crystal substrates was performed at a temperature of 345 °C. Trimethylaluminum and water were used as co-reactants. In-situ reflection high-energy electron diffraction and ex-situ x-ray diffraction were used to determine the crystallinity of the Al2O3 films. In-situ x-ray photoelectron spectroscopy was used to characterize the Al2O3/STO heterointerface. The formation of a Ti3+ feature is observed in the Ti 2p spectrum of STO after the first few ALD cycles of Al2O3 and even after exposure of the STO substrate to trimethylaluminum alone at 345 °C. The presence of a Ti3+ feature is a direct indication of oxygen vacancies at the Al2O3/STO heterointerface, which provide the carriers for the quasi-two dimensional electron gas at the interface.

scholarly journals Модификация соотношения sp^2/sp^3-гибридного углерода в PECVD пленках DLC

2020 ◽  
Vol 54 (9) ◽  
pp. 855
Author(s):  
П.А. Юнин ◽  
А.И. Охапкин ◽  
М.Н. Дроздов ◽  
С.А. Королев ◽  
Е.А. Архипова ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Diamond Like Carbon ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
In Situ Methods

Abstract It is known that diamond-like carbon layers consist of carbon components with sp ^2 (graphite) and sp ^3 (diamond) hybridizations of electron orbitals. The quantitative ratio between sp ^2 and sp ^3 components has a profound effect on the structural, morphological, optical, electrical, and mechanical properties of the films. In this study, the possibility of controlling the fractions of sp ^2- and sp ^3-hybridized carbon in diamond-like films produced by plasma-enhanced chemical-vapor deposition onto single-crystal silicon and diamond substrates is analyzed. In-situ methods of controlling the fraction of the sp ^3 component by varying the power of the capacitive and inductively coupled discharges directly during production of the film and ex-situ methods, in which use is made of thermal annealing and the application of an electric field, are demonstrated.

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