Effect of annealing conditions on structural transformation of ZnS thin film

2006 ◽  
Vol 2006 (suppl_23_2006) ◽  
pp. 287-292 ◽  
Author(s):  
T. Kryshtab ◽  
J. Palacios-Gómez ◽  
M. Mazin
Keyword(s):  
Thin Film ◽  
Structural Transformation ◽  
Annealing Conditions

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

Effect of Annealing Conditions on Microstructure Evolution of NiMnFeGa Shape Memory Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 1745-1749
Author(s):  
Hai Bo Wang ◽  
Li Ma ◽  
Wei Cai
Keyword(s):  
Thin Film ◽  
Shape Memory ◽  
Microstructure Evolution ◽  
Face Centered Cubic ◽  
Free Standing ◽  
Annealing Conditions ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Face Centered ◽  
Ferromagnetic Shape Memory

The microstructure evolution of sputtered polycrystalline Ni54.75Mn13.25Fe7Ga25 ferromagnetic shape memory thin film annealed under different conditions is studied. Microstructure of different annealed films was studied using Transmission Electron Microscope (TEM) and corresponding selected area electron diffraction (SAED) patterns. The result shows that in the microstructure of as-deposited Ni54.75Mn13.25Fe7Ga25 free-standing film, after annealed at 1073 K for different time, the crystalline grain grows up with the increase of the annealing time. By analysis of the SAED patterns, the structure of the thin films change from face-centered cubic austenite to orthorhombic structure martensite compared between the film annealed at 1073 K for 10 mins, 1hr, 4 hrs, and 24 hrs respectively. It indicated that the heat treatment is an effective method of crystallizing behavior for the thin film.

Thin Film Deposition and Transport in 2223 Bi‐Sr‐Ca‐Cu‐O

1989 ◽  
Vol 169 ◽  
Author(s):  
J.T. Kucera ◽  
D.G. Steel ◽  
D.W. Face ◽  
J.M. Graybeal ◽  
T.P. Orlando ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Annealing Conditions ◽  
Sensitive Function ◽  
Post Deposition

AbstractWe have reproducibly prepared thin films of Bi‐Sr‐Ca‐Cu‐O with Tc ≥ 105K. Depositions were done at ambient temperature with a subsequent post‐deposition anneal, and did not include lead substitution. X‐ray diffraction data indicates a majority fraction of the 2223 phase. These films possess very large grains of the order of 20‐30 u.m in size. Post‐deposition annealing conditions are a sensitive function of composition. Detailed transport measurements as a function of temperature and magnetic field have been obtained.

scholarly journals Annealing Conditions’ Influence on the Oxidation of Silicon‐Aluminium‐Alloys in Combinatorial Thin‐Film Libraries

2019 ◽  
Vol 216 (12) ◽  
pp. 1801009
Author(s):  
Karin Niederwimmer ◽  
Cezarina Cela Mardare ◽  
Wolfgang T. König ◽  
Silvia Huber ◽  
Gerhard Angeli ◽  
...  
Keyword(s):  
Thin Film ◽  
Aluminium Alloys ◽  
Annealing Conditions

Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric Pzt Films Deposited by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
B. Ea-Kim ◽  
F. Varniere ◽  
M. C. Hugon ◽  
B. Agius ◽  
R. Bisaro ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Heating Rates ◽  
Tem Analysis ◽  
Low Leakage ◽  
Annealing Conditions ◽  
Low Leakage Current ◽  
Process Studies

AbstractThe electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline RuOx/SiO2/Si have been studied. It is found that the amorphous as-deposited thin film, processed by rapid thermal annealing (RTA), is transformed to a perovskite PZT at about 700°C. It is pointed out that the “heating rates” to reach 700°C affect the electrical properties of such films: TEM analysis reveal different grain sizes as a function of the heating rate. The XRD show that an oriented (111) PZT is promoted when the film is annealed to the temperatures of 800°C for 5 secondes. For these annealing conditions, the electrical properties of such structure depend strongly on the deposition conditions of PZT. Our process studies show that a thin film PZT deposited on Pt or RuO1.65 at 200°C and 1 Pa argon pressure gives good hysteresis loop with high values of Ps and Pr (about 20 and 30 μC/cm2 on Pt and RuO1.65 respectively) and low leakage current about 10−11 A/cm2 on Pt and 10−6 A/cm2 on RuO1.65.

Continuous microscratch measurements of the practical and true works of adhesion for metal/ceramic systems

1996 ◽  
Vol 11 (12) ◽  
pp. 3133-3145 ◽  
Author(s):  
S. Venkataraman ◽  
D. L. Kohlstedt ◽  
W. W. Gerberich
Keyword(s):  
Thin Film ◽  
Energy Dissipation ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Plastic Work ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Plastic Energy ◽  
Annealing Conditions ◽  
Metal Ceramic

Using a continuous microscratch technique, the adhesion strengths of Pt, Cr, Ti, and Ta2N metallizations to NiO and Al2O3 substrates have been characterized. The practical work of adhesion was determined as a function of both thickness and annealing conditions. For all except the Ta2N films, the practical work of adhesion increases nonlinearly from a few tenths of a J/m2 to several J/m2 as the thickness of the thin film is increased, indicating that a greater amount of plastic work is expended in delaminating thicker films. Further, the practical work of adhesion also increases with increasing annealing temperature, indicating stronger bonding at the interface. In the limit that the film thickness tends to zero, the plastic energy dissipation in the film tends to zero. As a result, the extrapolation to zero thickness yields the true work of adhesion for that system.

Sign in / Sign up

Export Citation Format

Share Document