Effect of Electrodes on Crystallization and Electrical Properties of Ferroelectric Pzt Films Deposited by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
B. Ea-Kim ◽  
F. Varniere ◽  
M. C. Hugon ◽  
B. Agius ◽  
R. Bisaro ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Heating Rates ◽  
Tem Analysis ◽  
Low Leakage ◽  
Annealing Conditions ◽  
Low Leakage Current ◽  
Process Studies

AbstractThe electrical properties and crystallization process of Pb(Zr0.4, Ti0.6)O3 or PZT thin films grown by rf magnetron sputtering, from ceramic target, on fiber-textured (111)Pt/TiN/Ti/SiO2/Si and polycrystalline RuOx/SiO2/Si have been studied. It is found that the amorphous as-deposited thin film, processed by rapid thermal annealing (RTA), is transformed to a perovskite PZT at about 700°C. It is pointed out that the “heating rates” to reach 700°C affect the electrical properties of such films: TEM analysis reveal different grain sizes as a function of the heating rate. The XRD show that an oriented (111) PZT is promoted when the film is annealed to the temperatures of 800°C for 5 secondes. For these annealing conditions, the electrical properties of such structure depend strongly on the deposition conditions of PZT. Our process studies show that a thin film PZT deposited on Pt or RuO1.65 at 200°C and 1 Pa argon pressure gives good hysteresis loop with high values of Ps and Pr (about 20 and 30 μC/cm2 on Pt and RuO1.65 respectively) and low leakage current about 10−11 A/cm2 on Pt and 10−6 A/cm2 on RuO1.65.

scholarly journals Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 318 ◽  
Author(s):  
Xiaoyang Chen ◽  
Taolan Mo ◽  
Binbin Huang ◽  
Yun Liu ◽  
Ping Yu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Breakdown Strength ◽  
Rf Magnetron Sputtering ◽  
Capacitance Density ◽  
Film Capacitor ◽  
Thin Film Capacitor ◽  
Low Leakage ◽  
Low Leakage Current

Crystalline Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) thin film was grown on Pt(111)/Ti/SiO2/Si substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films, especially using the RF magnetron sputtering method. The microstructure of the thin films was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and capacitance properties, such as capacitance density, leakage behavior, and the temperature dependence of capacitance were investigated experimentally. The prepared perovskite BSZT film showed a low leakage current density of 7.65 × 10−7 A/cm2 at 60 V, and large breakdown strength of 4 MV/cm. In addition, the prepared BSZT thin film capacitor not only exhibits an almost linear and acceptable change (ΔC/C ~13.6%) of capacitance from room temperature to 180 °C but also a large capacitance density of 1.7 nF/mm2 at 100 kHz, which show great potential for coupling and decoupling applications.

REDUCED LEAKAGE CURRENT AND ENHANCED MAGNETIC PROPERTIES OF (Bi,Nd)FeO3 THIN FILMS GROWN ON (Ba,Sr)TiO3 BOTTOM LAYER

2012 ◽  
Vol 05 (03) ◽  
pp. 1250032 ◽  
Author(s):  
C. B. MA ◽  
X. G. TANG ◽  
D. G. CHEN ◽  
Q. X. LIU ◽  
Y. P. JIANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Coupling Reaction ◽  
Bottom Layer ◽  
Rf Magnetron Sputtering ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Multiferroic Heterostructure

A multiferroic heterostructure composed of ( Bi 0.875 Nd 0.125) FeO 3 (BNF) are grown on ( Ba 0.65 Sr 0.35) TiO 3(BST) buffered Pt/Ti/SiO2/Si(100) substrate by rf-magnetron sputtering. The heterostructure BNF/BST exhibits a quite low leakage current (3.7 × 10-7 A/cm2 at 300 kV/cm) and dielectric loss (0.0036 at 100 kHz) at room temperature. The saturated magnetization and the coercive field of the BST/BNF heterostructure are 37.7 emu/cm3 and 357.6 Oe, respectively. The low leakage current owed to the action of BST in the charge transfer between BNF and the bottom electrode, the coupling reaction between BST and BNF films. And the better crystallization in BNF/BST heterostructure thin film lead to the ferromagnetic properties enhanced.

Electrical properties of (Zr,Ti)0.85(Ca,Sr)0.15O1.85 thin film grown on Pt/Ti/SiO2/Si substrate using RF magnetron sputtering

2014 ◽  
Vol 40 (9) ◽  
pp. 14957-14964
Author(s):  
Jin-Seong Kim ◽  
Jae-Min Han ◽  
Mi-Ri Joung ◽  
Sang-Hyo Kweon ◽  
Chong-Yun Kang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Si Substrate

scholarly journals Impact of Ar Flow Rates on Micro-Structural Properties of WS2 Thin Film by RF Magnetron Sputtering

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1635
Author(s):  
Md. Akhtaruzzaman ◽  
Md. Shahiduzzaman ◽  
Nowshad Amin ◽  
Ghulam Muhammad ◽  
Mohammad Aminul Islam ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Gas Flow Rate ◽  
Flow Rates ◽  
Ar Gas

Tungsten disulfide (WS2) thin films were deposited on soda-lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering at different Ar flow rates (3 to 7 sccm). The effect of Ar flow rates on the structural, morphology, and electrical properties of the WS2 thin films was investigated thoroughly. Structural analysis exhibited that all the as-grown films showed the highest peak at (101) plane corresponds to rhombohedral phase. The crystalline size of the film ranged from 11.2 to 35.6 nm, while dislocation density ranged from 7.8 × 1014 to 26.29 × 1015 lines/m2. All these findings indicate that as-grown WS2 films are induced with various degrees of defects, which were visible in the FESEM images. FESEM images also identified the distorted crystallographic structure for all the films except the film deposited at 5 sccm of Ar gas flow rate. EDX analysis found that all the films were having a sulfur deficit and suggested that WS2 thin film bears edge defects in its structure. Further, electrical analysis confirms that tailoring of structural defects in WS2 thin film can be possible by the varying Ar gas flow rates. All these findings articulate that Ar gas flow rate is one of the important process parameters in RF magnetron sputtering that could affect the morphology, electrical properties, and structural properties of WS2 thin film. Finally, the simulation study validates the experimental results and encourages the use of WS2 as a buffer layer of CdTe-based solar cells.

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