Continuous microscratch measurements of the practical and true works of adhesion for metal/ceramic systems

1996 ◽  
Vol 11 (12) ◽  
pp. 3133-3145 ◽  
Author(s):  
S. Venkataraman ◽  
D. L. Kohlstedt ◽  
W. W. Gerberich
Keyword(s):  
Thin Film ◽  
Energy Dissipation ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Plastic Work ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Plastic Energy ◽  
Annealing Conditions ◽  
Metal Ceramic

Using a continuous microscratch technique, the adhesion strengths of Pt, Cr, Ti, and Ta2N metallizations to NiO and Al2O3 substrates have been characterized. The practical work of adhesion was determined as a function of both thickness and annealing conditions. For all except the Ta2N films, the practical work of adhesion increases nonlinearly from a few tenths of a J/m2 to several J/m2 as the thickness of the thin film is increased, indicating that a greater amount of plastic work is expended in delaminating thicker films. Further, the practical work of adhesion also increases with increasing annealing temperature, indicating stronger bonding at the interface. In the limit that the film thickness tends to zero, the plastic energy dissipation in the film tends to zero. As a result, the extrapolation to zero thickness yields the true work of adhesion for that system.

Adhesion in Metal-Ceramic Systems

1993 ◽  
Vol 308 ◽  
Author(s):  
Shankar K. Venkataraman ◽  
William W. Gerberich ◽  
David L. Kohlstedt
Keyword(s):  
Film Thickness ◽  
Practical Work ◽  
Work Of Adhesion ◽  
Order Estimate ◽  
First Order ◽  
A Value ◽  
Diamond Indenter ◽  
Metal Ceramic ◽  
Sputter Deposited ◽  
Versus Film

ABSTRACTThe adhesion of Pt thin films to NiO substrates has been studied using the continuous microscratch technique. Films of Pt ranging from 65 to 1080 nm in thickness were sputter deposited onto single crystals of NiO. Continuous microscratch experiments were performed by driving a conical diamond indenter, with a nominal radius of 5 μm, simultaneously into and across the film until a load drop was observed indicating that the film had delaminated. The practical work of adhesion was calculated using a theoretical model developed for metal-ceramic systems. The practical work of adhesion increases from 0.03 to 4.7 J/m2 as the film thickness increases from 65 to 1080 nm. The practical work of adhesion includes the true work of adhesion — the energy to produce two new surfaces — and terms involving the plastic deformation of the film and substrate. Extrapolation of the practical work of adhesion versus film thickness data to zero thickness yields a first order estimate of the true work of adhesion. The true work of adhesion for the as-sputtered Pt/NiO system is determined to be 0.025 J/m2, a value of the same order as the Van der Waal’s energy.

Plasticity contributions to interface adhesion in thin-film interconnect structures

2000 ◽  
Vol 15 (12) ◽  
pp. 2758-2769 ◽  
Author(s):  
Michael Lane ◽  
Reinhold H. Dauskardt ◽  
Anna Vainchtein ◽  
Huajian Gao
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Fracture Energy ◽  
Fracture Resistance ◽  
Work Of Adhesion ◽  
Interface Fracture ◽  
Cohesive Stress ◽  
Wide Range ◽  
Macroscopic Fracture ◽  
Metal Layers

The effects of plasticity in thin copper layers on the interface fracture resistance in thin-film interconnect structures were explored using experiments and multiscale simulations. Particular attention was given to the relationship between the intrinsic work of adhesion, Go, and the measured macroscopic fracture energy, Gc. Specifically, the TaN/SiO2 interface fracture energy was measured in thin-film Cu/TaN/SiO2 structures in which the Cu layer was varied over a wide range of thickness. A continuum/FEM model with cohesive surface elements was employed to calculate the macroscopic fracture energy of the layered structure. Published yield properties together with a plastic flow model for the metal layers were used to predict the plasticity contribution to interface fracture resistance where the film thickness (0.25–2.5 μm) dominated deformation behavior. For thicker metal layers, a transition region was identified in which the plastic deformation and associated plastic energy contributions to Gc were no longer dominated by the film thickness. The effects of other salient interface parameters including peak cohesive stress and Go are explored.

Structural Properties of PbI2 Thin Film

2014 ◽  
Vol 879 ◽  
pp. 175-179 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Naser Mahmoud Ahmed ◽  
Y. Al-Douri ◽  
U. Hashim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Analysis ◽  
Film Thickness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Lead Iodide ◽  
Thermal Evaporation Method ◽  
Growth Orientation

Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.

Dielectric and ferroelectric response as a function of annealing temperature and film thickness of sol-gel deposited Pb(Zr0.52Ti0.48)O3 thin film

1999 ◽  
Vol 86 (5) ◽  
pp. 2700-2711 ◽  
Author(s):  
Chae-Ryong Cho ◽  
Won-Jae Lee ◽  
Byoung-Gon Yu ◽  
Bo-Woo Kim
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Sol Gel

A Brittle to Ductile Transition (BDT) in Adhered Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
W. W. Gerberich ◽  
A. A. Volinsky ◽  
N. I. Tymiak ◽  
N. R. Moody
Keyword(s):  
Thin Films ◽  
Energy Dissipation ◽  
Yield Strength ◽  
Plastic Zone ◽  
Film Thickness ◽  
Fracture Energy ◽  
Test Temperature ◽  
Plastic Energy ◽  
Order Of Magnitude ◽  
Film Substrate

AbstractIt has been long recognized that the BDT in bulk materials may be associated with enhanced plastic energy dissipation. This can be achieved by either changing the state of stress (plane strain to plane stress) or by raising the test temperature (lowering the yield stress). The situation is somewhat different in thin films where the BDT can be achieved by increasing film thickness or perhaps, even in a limited temperature range, by raising the test temperature. To study the latter we use a superlayer technique with a 1 μm tungsten film on top of thin copper films bonded to SiO2/Si wafers. This involves indenting into the superlayer which stores and then releases large amounts of elastic energy into the thin film/substrate interface. Here, preliminary data on 500 nm thick Cu demonstrates more than an order of magnitude increase in fracture energy from about 10 to 200 J/m2 as the test temperature is raised from 20°C to 130°C. As the amount of plastic energy absorption would appear to be limited by film thickness, this relatively large value was unanticipated. This interfacial fracture energy translates to a stress intensity of 5 MPa-m1/2. In context of the highest possible nanocrystalline Cu yield strength, this still represents a plastic zone of nearly 30 μm. This illustrates the quandary associated with explaining such high apparent toughness values as one generally expects plasticity to be truncated by film thickness. Is this associated with:–some artifact of assessing local stresses during nanoindentation at elevated temperature:–extending the plastic zone in the direction of crack growth much further than the film thickness;–a shielding mechanism from an organized dislocation array in a ductile film sandwiched between a brittle substrate and a higher yield strength superlayer;–some plastic energy dissipation in the superlayer;–or by enhanced mode II at higher temperatures?A few of these will be addressed in some detail with a goal of narrowing the field of the most promising candidates.

Effects of Annealing Treatment on WO3 Thin Films Prepared by DC Reactive Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 248-250 ◽  
Author(s):  
Thanat Srichaiyaperk ◽  
Kamon Aiempanakit ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Reactive Magnetron ◽  
Thin Film Thickness ◽  
Dc Reactive Magnetron Sputtering

Tungsten trioxide (WO3) thin films were prepared by a DC reactive magnetron sputtering technique. The thin film fabrication process used tungsten (99.995%) as the sputtering target, the mixture of argon and oxygen as sputtering and reactive gases, and silicon (100) and glass slides as the substrates. The effects of annealing temperature in the range of 200-400°C on physical and optical properties of the WO3 thin films were investigated. The nanostructures and morphologies of these films were characterized by grazing-incident X-ray diffraction (GIXRD) and field-emission scanning electron microscopy (FE-SEM). The optical properties were analyzed by variable-angle spectroscopic ellipsometry (VASE) and spectrophotometer. From the XRD results, the as-deposited and annealed WO3 thin films up to 300°C were all amorphous. Only the WO3 thin film annealed at 400°C exhibited a polycrystalline monoclinic phase. The FE-SEM cross-sections and surface topologies demonstrated nearly identical thin-film thickness and physical grain sizes. The SE analyses showed that the thin films were all homogeneous dense layers with additional surface roughness. With the annealing treatment, the thin film thickness was slightly decreased. The SE physical model was best optimized with the Cauchy optical model. The results showed that the refractive index at 550 nm was increased from 2.17 to 2.23 with the increased annealing temperature. The results from the spectrophotometer confirmed that the optical spectra for the WO3 thin films were decreased. This study demonstrated that, the thin film annealed at 400°C exhibited the slightly lower transparency, which corresponded to the results from the GIXRD and SE analyses.

scholarly journals Tuning Structural Properties of WO3 Thin Films for Photoelectrocatalytic Water Oxidation

Catalysts ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 381
Author(s):  
Amar Kamal Mohamedkhair ◽  
Qasem Ahmed Drmosh ◽  
Mohammad Qamar ◽  
Zain Hassan Yamani
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Band Gap ◽  
Water Oxidation ◽  
Annealing Temperature ◽  
Film Deposition ◽  
Visible Radiation ◽  
Transfer Resistance ◽  
Post Annealing ◽  
Post Annealing Temperature

The preparation of tungsten oxide (WO3) thin film by direct current (DC) reactive sputtering magnetron method and its photoelectrocatalytic properties for water oxidation reaction are investigated using ultraviolet-visible radiation. The structural, morphological, and compositional properties of WO3 are fine-tuned by controlling thin film deposition time, and post-annealing temperature and environment. The findings suggest that the band gap of WO3 can be controlled by adjusting the post-annealing temperature; the band gap decreased from 3.2 to 2.7 eV by increasing the annealing temperature from 100 to 600 °C. The theoretical calculations of the WO3 bandgap and the density of state are performed by density functional theory (DFT). Following the band gap modification, the photoelectrocatalytic activity increased and the maximum photocurrent (0.9 mA/cm2 at 0.6 VSCE) is recorded with WO3 film heated at 500 °C. The WO3 film heated under air exhibits much better performance in photoelectrochemical water oxidation process than that of annealed under inert atmosphere, due to its structural variation. The change in sputtering time leads to the formation of WO3 with varying film thickness, and the maximum photocurrent is observed when the film thickness is approximately 150 nm. The electrical conductivity and charge transfer resistance are measured and correlated to the properties and the performance of the WO3 photoelectrodes. In addition, the WO3 photoelectrode exhibits excellent photoelectrochemical stability.

Crystallization of Amorphous LPCVD Silicon Films and Application to Bipolar and Thin Film Transistors

1987 ◽  
Vol 106 ◽  
Author(s):  
Miltiadis K. Hatalis ◽  
David W. Greve
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Bipolar Transistors ◽  
Silicon Films ◽  
Annealing Conditions ◽  
Polysilicon Emitter

ABSTRACTWe studied the crystallization of LPCVD amorphous silicon films by TEM and found that the grain size of crystallized films depends upon the deposition and annealing conditions. The grain size increases as the deposition and/or the annealing temperature decreases. We also investigated the application of crystallized films in the fabrication of polysilicon emitter bipolar transistors and thin film transistors. The performance of bipolar transistors was found to have a small dependence on the grain size. In contrast, the performance of thin film transistors was strongly dependent upon the grain size.

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